BYM36A, BYM36B, BYM36C, BYM36D, BYM36E www.vishay.com Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES Glass passivated Hermetically sealed package Very low switching losses Low reverse current High reverse voltage 949588 Material categorization: For definitions of compliance please see MECHANICAL DATA www.vishay.com/doc 99912 Case: SOD-64 APPLICATIONS Terminals: plated axial leads, solderable per MIL-STD-750, Switched mode power supplies method 2026 High-frequency inverter circuits Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYM36E BYM36E-TR 2500 per 10 tape and reel 12 500 BYM36E BYM36E-TAP 2500 per ammopack 12 500 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYM36A V = 200 V I = 3 A SOD-64 R F(AV) BYM36B V = 400 V I = 3 A SOD-64 R F(AV) BYM36C V = 600 V I = 3 A SOD-64 R F(AV) BYM36D V = 800 V I = 2.9 A SOD-64 R F(AV) BYM36E V = 1000 V I = 2.9 A SOD-64 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BYM36A V = V 200 V R RRM BYM36B V = V 400 V R RRM Reverse voltage See electrical characteristics BYM36C V = V 600 V R RRM = repetitive peak reverse voltage BYM36D V = V 800 V R RRM BYM36E V = V 1000 V R RRM Peak forward surge current t = 10 ms, half sine wave I 65 A p FSM BYM36A I 3A F(AV) BYM36B I 3A F(AV) Average forward current BYM36C I 3A F(AV) BYM36D I 2.9 A F(AV) BYM36E I 2.9 A F(AV) Non repetitive reverse avalanche energy I = 1 A, inductive load E 20 mJ (BR)R R Junction and storage temperature range T = T - 55 to + 175 C j stg MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, T = constant R 25 K/W L thJA Junction ambient On PC board with spacing 25 mm R 70 K/W thJA Rev. 1.8, 03-Sep-12 Document Number: 86012 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BYM36A, BYM36B, BYM36C, BYM36D, BYM36E www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT BYM36A V -- 1.6 V F BYM36B V -- 1.6 V F I = 3 A BYM36C V -- 1.6 V F F BYM36D V - - 1.78 V F BYM36E V - - 1.78 V F Forward voltage BYM36A V - - 1.22 V F BYM36B V - - 1.22 V F I = 3 A, T = 175 C BYM36C V - - 1.22 V F j F BYM36D V - - 1.28 V F BYM36E V - - 1.28 V F V = V I -- 5 A R RRM R Reverse current V = V , T = 150 C I - - 100 A R RRM j R BYM36A t - - 100 ns rr BYM36B t - - 100 ns rr Reverse recovery time I = 0.5 A, I = 1 A, i = 0.25 A BYM36C t - - 100 ns F R R rr BYM36D t - - 150 ns rr BYM36E t - - 150 ns rr BYM36A V 300 - - V (BR)R BYM36B V 500 - - V (BR)R Reverse breakdown voltage I = 100 A BYM36C V 700 - - V R (BR)R BYM36D V 900 - - V (BR)R BYM36E V 1100 - - V (BR)R TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 600 4 BYM36A, BYM36B, BYM36C R = 25 K/W thJA 500 3 1000 V R = 70 K/W 400 thJA R = 25 K/W thJA 800 V 300 2 R = 70 K/W thJA 600 V 200 400 V 1 100 V = V R RRM half sinewave 200 V 0 0 0 40 80 120 160 200 0 40 80 120 160 200 959705 T - Junction Temperature (C) 959706 T - Ambient Temperature (C) j amb Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 2 - Max. Average Forward Current vs. Ambient Temperature Rev. 1.8, 03-Sep-12 Document Number: 86012 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Max. Reverse Power Dissipation (mW) R I - Average Forward Current (A) FAV