BYS11-90-E3TR3 Vishay

333 3 BYS11-90 www.vishay.com Vishay General Semiconductor Surface-Mount Schottky Barrier Rectifier FEATURES Available Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency Very low switching losses High surge capability SMA (DO-214AC) Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C AEC-Q101 qualified available Cathode Anode - Automotive ordering code: base P/NHE3 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS 3D Models For use in high frequency inverters, switching power supplies, freewheeling diodes, oring diode, DC/DC converters, and reverse battery protection. PRIMARY CHARACTERISTICS MECHANICAL DATA I 1.5 A F(AV) Case: SMA (DO-214AC) V 90 V RRM Molding compound meets UL 94 V-0 flammability rating I 40 A FSM Base P/N-E3 - RoHS-compliant, commercial grad e V 0.75 V Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified F ( X denotes revision code e.g. A, B, .....) T max. 150 C J Package SMA (DO-214AC) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 Circuit configuration Single E3 and HE3 suffix meet JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOLBYS11-90UNIT Device marking code BYS109 Maximum repetitive peak reverse voltage V 90 V RRM Maximum average forward rectified current I 1.5 A F(AV) 8.3 ms 40 Peak forward surge current single half sine-wave I A FSM superimposed on rated load 10 ms 30 Voltage rate of change (rated V ) dV/dt 10 000 V/s R Junction and storage temperature range T , T -55 to +150 C J STG Revision: 13-May-2020 Document Number: 86014 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D BYS11-90 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL BYS11-90 UNIT (1) Maximum instantaneous forward voltage 1.0 A V 750 mV F T = 25 C 100 A J (1) Maximum DC reverse current V I RRM R T = 100 C 1 mA J Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL BYS11-90 UNIT Maximum thermal resistance, junction-to-lead R 25 C/W JL (1) R 150 JA (2) Maximum thermal resistance, junction-to-ambient R 125 C/W JA (3) R 100 JA Notes (1) Mounted on epoxy-glass hard tissue (2) 2 Mounted on epoxy-glass hard tissue, 50 mm 35 m Cu (3) 2 Mounted on Al-oxide-ceramic (Al O ), 50 mm 35 m Cu 2 3 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYS11-90-E3/TR 0.064 TR 1800 7 diameter plastic tape and reel BYS11-90-E3/TR3 0.064 TR3 7500 13 diameter plastic tape and reel (1) BYS11-90HE3 A/H 0.064 H 1800 7 diameter plastic tape and reel (1) BYS11-90HE3 A/I 0.064 I 7500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 13-May-2020 Document Number: 86014 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000