IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 www.vishay.com Vishay Siliconix Power MOSFET FEATURES S Advanced process technology DPAK IPAK Fully avalanche rated (TO-252) (TO-251) Surface-mount (IRFR9310, SiHFR9310) G D Straight lead (IRFU9310, SiHFU9310) D P-channel Available Fast switching S G S Material categorization: for definitions of D G D compliance please see www.vishay.com/doc 99912 P-Channel MOSFET DESCRIPTION Third generation power MOSFETs from Vishay utilize PRODUCT SUMMARY advanced processing techniques to achieve low V (V) -400 on-resistance per silicon area. This benefit, combined with DS the fast switching speed and ruggedized device design that R ()V = -10 V 7.0 DS(on) GS power MOSFETs are well known for, provides the designer Q (Max.) (nC) 13 g with an extremely efficient and reliable device for use in a Q (nC) 3.2 gs wide variety of applications. Q (nC) 5.0 gd The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight Configuration Single lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) SiHFR9310-GE3 SiHFR9310TRL-GE3 SiHFR9310TR-GE3 SiHFR9310TRR-GE3 SiHFU9310-GE3 Lead (Pb)-free and halogen-free - IRFR9310TRLPbF-BE3 - - - a a a Lead (Pb)-free IRFR9310PbF IRFR9310TRLPbF IRFR9310TRPbF IRFR9310TRRPbF IRFU9310PbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 400 DS V Gate-source voltage V 20 GS T = 25 C -1.8 C Continuous drain current V at -10 V I GS D T = 100 C -1.1 A C a Pulsed drain current I -7.2 DM Linear derating factor 0.40 W/C b Single pulse avalanche energy E 92 mJ AS a Repetitive avalanche current I -1.8 A AR a Repetitive avalanche energy E 5.0 mJ AR Maximum power dissipation T = 25 C P 50 W C D c Peak diode recovery dV/dt dV/dt -24 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Starting T = 25 C, L = 57 mH, R = 25 , I = - 1.8 A (see fig. 12) J g AS c. I - 1.1 A, dI/dt 450 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0373-Rev. E, 19-Apr-2021 Document Number: 91284 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R -- 110 thJA Maximum junction-to-ambient R -- 50 C/W thJA a (PCB mount) Maximum junction-to-case (drain) R -- 2.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = - 250 A - 400 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = - 1 mA - - 0.41 - V/C DS DS J D Gate-source threshold voltage V V = V , I = - 250 A - 2.0 - - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = - 400 V, V = 0 V - - - 100 DS GS Zero gate voltage drain current I A DSS V = - 320 V, V = 0 V, T = 125 C - - - 500 DS GS J b Drain-source on-state resistance R V = - 10 V I = - 1.1 A -- 7.0 DS(on) GS D Forward transconductance g V = - 50 V, I = - 1.1 A 0.91 - - S fs DS D Dynamic Input capacitance C - 270 - iss V = 0 V, GS Output capacitance C -5V = - 25 V, 0- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -8.0- rss Total gate charge Q -- 13 g I = - 1.1 A, V = - 320 V, D DS Gate-source charge Q --V = - 10 V 3.2 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --5.0 gd Turn-on delay time t -11 - d(on) Rise time t -10 - r V = - 200 V, I = - 1.1 A, DD D ns b R = 21 , R = 180 , see fig. 10 g D Turn-off delay time t -25- d(off) Fall time t -24- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G c Internal source inductance L -7.5 - die contact S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous source-drain diode current I -- - 1.9 S showing the A G integral reverse a Pulsed diode forward current I -- - 7.6 SM S p - n junction diode b Body diode voltage V T = 25 C, I = - 1.1 A, V = 0 V -- - 4.0 V SD J S GS Body diode reverse recovery time t - 170 260 ns rr b T = 25 C, I = -1.1 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q - 640 960 nC rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % c. This is applied for IPAK, L of DPAK is measured between lead and center of die contact S S21-0373-Rev. E, 19-Apr-2021 Document Number: 91284 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000