IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt rating DPAK IPAK Repetitive avalanche rated (TO-252) (TO-251) Surface-mount (IRFRC20, SiHFRC20) D Straight lead (IRFUC20, SiHFUC20) D G Available in tape and reel Available Fast switching S G S Ease of paralleling D G S Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc 99912 DESCRIPTION PRODUCT SUMMARY Third generation power MOSFETs from Vishay provide the V (V) 600 DS designer with the best combination of fast switching, ruggedized device design, low on-resistance and R ()V = 10 V 4.4 DS(on) GS cost-effectiveness. Q (Max.) (nC) 18 g The DPAK is designed for surface mounting using vapor Q (nC) 3.0 gs phase, infrared, or wave soldering techniques. The straight Q (nC) 8.9 gd lead version (IRFUC, SiHFUC series) is for through-hole Configuration Single mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) SiHFRC20-GE3 SiHFRC20TRL-GE3 SiHFRC20TR-GE3 SiHFRC20TRR-GE3 SiHFUC20-GE3 Lead (Pb)-free and halogen-free IRFRC20PbF-BE3 IRFRC20TRLPbF-BE3 IRFRC20TRPbF-BE3 IRFRC20TRRPbF-BE3 - a a a Lead (Pb)-free IRFRC20PbF IRFRC20TRLPbF IRFRC20TRPbF IRFRC20TRRPbF IRFUC20PbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 20 GS T = 25 C 2.0 C Continuous drain current V at 10 V I GS D T = 100 C 1.3 A C a Pulsed drain current I 8.0 DM Linear derating factor 0.33 W/C e Linear derating factor (PCB mount) 0.020 b Single pulse avalanche energy E 74 mJ AS a Repetitive avalanche current I 2.0 A AR a Repetitive avalanche energy E 4.2 mJ AR Maximum power dissipation T = 25 C 42 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.5 A c Peak diode recovery dV/dt dV/dt 3.0 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 50 V, starting T = 25 C, L = 37 mH, R = 25 , I = 2.0 A (see fig. 12) DD J g AS c. I 2.0 A, dI/dt 40 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0818-Rev. F, 02-Aug-2021 Document Number: 91285 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R -- 110 thJA Maximum junction-to-ambient R -- 50 C/W thJA a (PCB mount) Maximum junction-to-case (drain) R -- 3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.88 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 100 DS GS Zero gate voltage drain current I A DSS V = 480 V, V = 0 V, T = 125 C - - 500 DS GS J b Drain-source on-state resistance R V = 10 V I = 1.2 A -- 4.4 DS(on) GS D Forward transconductance g V = 50 V, I = 1.2 A 1.4 - - S fs DS D Dynamic Input capacitance C - 350 - iss V = 0 V, GS Output capacitance C -4V = - 25 V, 8- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -8.6- rss Total gate charge Q -- 18 g I = 2.0 A, V = 360 V, D DS Gate-source charge Q --V = 10 V 3.0 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --8.9 gd Turn-on delay time t -10 - d(on) Rise time t -23 - r V = 300 V, I = 2.0 A, DD D ns b R = 18 , R = 135 , see fig. 10 g D Turn-off delay time t -30- d(off) Fall time t -25- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous source-drain diode current I -- 2.0 S showing the A G integral reverse a Pulsed diode forward current I -- 8.0 S SM p - n junction diode b Body diode voltage V T = 25 C, I = 2.0 A, V = 0 V -- 1.6 V SD J S GS Body diode reverse recovery time t - 290 580 ns rr b T = 25 C, I = 2.0 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.67 1.3 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0818-Rev. F, 02-Aug-2021 Document Number: 91285 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000