IRFS11N50A, SiHFS11N50A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Q results in Simple Drive g V (V) 500 DS Requirement R ( )V = 10 V 0.52 DS(on) GS Improved Gate, Avalanche and Dynamic dV/dt Available Q (Max.) (nC) 52 g Ruggedness Q (nC) 13 gs Fully Characterized Capacitance and Available Q (nC) 18 Avalanche Voltage and Current gd Configuration Single Effective C Specified oss Material categorization: For definitions of compliance D please see www.vishay.com/doc 99912 2 D PAK (TO-263) Note * This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. G Please see the information/tables in this datasheet for details. APPLICATIONS D G Switch Mode Power Supply (SMPS) S S Uninterruptible Power Supply N-Channel MOSFET High Speed Power Switching TYPICAL SMPS TOPOLOGIES Two Transistor Forward Half and Full Bridge Power Factor Correction Boost ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and Halogen-free SiHFS11N50A-GE3 SiHFS11N50ATRR-GE3 SiHFS11N50ATRL-GE3 a a Lead (Pb)-free IRFS11N50APbF IRFS11N50ATRRP IRFS11N50ATRLP Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT 500 Drain-Source Voltage V DS V Gate-Source Voltage V 30 GS 11 T = 25 C C Continuous Drain Current V at 10 V I GS D T = 100 C 7.0 A C a 44 Pulsed Drain Current I DM Linear Derating Factor 1.3 W/C b 275 Single Pulse Avalanche Energy E mJ AS a Repetitive Avalanche Current I 11 A AR a 17 Repetitive Avalanche Energy E mJ AR Maximum Power Dissipation T = 25 C P 170 W C D c 6.9 Peak Diode Recovery dV/dt dV/dt V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d 300 Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 4.5 mH, R = 25 , I = 11 A (see fig. 12). J g AS c. I 11 A, dI/dt 140 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. S13-1927-Rev. E, 09-Sep-13 Document Number: 91286 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFS11N50A, SiHFS11N50A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Case (Drain) R -0.75 thJC Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Ambient R -62 thJA SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 500 - - V DS GS D V/C V /T -0.060 - V Temperature Coefficient Reference to 25 C, I = 1 mA DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 6.6 A - - 0.52 DS(on) GS D Forward Transconductance g V = 50 V, I = 6.6 A 6.1 - - S fs DS D Dynamic Input Capacitance C V = 0 V, - 1423 - iss GS Output Capacitance C -208- oss V = 25 V, DS Reverse Transfer Capacitance C -8.1- rss f = 1.0 MHz, see fig. 5 pF V = 1.0 V, f = 1.0 MHz - 2000 - DS Output Capacitance C oss V = 0 V V = 400 V, f = 1.0 MHz - 55 - GS DS c Effective Output Capacitance C eff. V = 0 V to 400 V -97 - oss DS Total Gate Charge Q -- 52 g I = 11 A, V = 400 V D DS Gate-Source Charge Q --V = 10 V 13 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --18 gd Turn-On Delay Time t -14 - d(on) V = 250 V, I = 11 A DD D Rise Time t -35 - r R = 9.1 , R = 22 ns g D Turn-Off Delay Time t -3b 2- d(off) see fig. 10 Fall Time t -28- f Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current I -- 11 D S showing the A integral reverse G a Pulsed Diode Forward Current I -- 44 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 11 A, V = 0 V -- 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 510 770 ns rr b T = 25 C, I = 11 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -3.4 5.1 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising fom 0 % V to 80 % V . oss oss DS DS DS S13-1927-Rev. E, 09-Sep-13 Document Number: 91286 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000