IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 600 DS Repetitive Avalanche Rated R ( )V = 10 V 4.4 DS(on) GS Surface Mount (IRFRC20, SiHFRC20) Q (Max.) (nC) 18 g Straight Lead (IRFUC20, SiHFUC20) Q (nC) 3.0 gs Available in Tape and Reel Q (nC) 8.9 gd Fast Switching Configuration Single Ease of Paralleling D Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 DPAK IPAK (TO-252) (TO-251) DESCRIPTION D Third generation power MOSFETs from Vishay provide the D G designer with the best combination of fast switching, ruggedized device design, low on-resistance and S G S cost-effectiveness. D G The DPAK is designed for surface mounting using vapor S phase, infrared, or wave soldering techniques. The straight N-Channel MOSFET lead version (IRFUC, SiHFUC series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and SiHFRC20-GE3 SiHFRC20TRL-GE3 SiHFRC20TR-GE3 SiHFRC20TRR-GE3 SiHFUC20-GE3 Halogen-free a a a IRFRC20PbF IRFRC20TRLPbF IRFRC20TRPbF IRFRC20TRRPbF IRFUC20PbF Lead (Pb)-free a a a SiHFRC20-E3 SiHFRC20TL-E3 SiHFRC20T-E3 SiHFRC20TR-E3 SiHFUC20-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 20 GS T = 25 C 2.0 C Continuous Drain Current V at 10 V I GS D T = 100 C 1.3 A C a Pulsed Drain Current I 8.0 DM Linear Derating Factor 0.33 W/C e Linear Derating Factor (PCB Mount) 0.020 b Single Pulse Avalanche Energy E 74 mJ AS a Repetitive Avalanche Current I 2.0 A AR a Repetitive Avalanche Energy E 4.2 mJ AR Maximum Power Dissipation T = 25 C 42 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 2.5 A c Peak Diode Recovery dV/dt dV/dt 3.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 37 mH, R = 25 , I = 2.0 A (see fig. 12). DD J g AS c. I 2.0 A, dI/dt 40 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S13-0166-Rev. E, 04-Feb-13 Document Number: 91285 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R - - 110 thJA Maximum Junction-to-Ambient R -- 50 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -- 3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.88 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 500 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 1.2 A -- 4.4 DS(on) GS D Forward Transconductance g V = 50 V, I = 1.2 A 1.4 - - S fs DS D Dynamic Input Capacitance C - 350 - iss V = 0 V, GS Output Capacitance C -4V = - 25 V, 8- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -8.6- rss Total Gate Charge Q -- 18 g I = 2.0 A, V = 360 V, D DS Gate-Source Charge Q --V = 10 V 3.0 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --8.9 gd Turn-On Delay Time t -10 - d(on) Rise Time t -23 - r V = 300 V, I = 2.0 A, DD D ns b R = 18 , R = 135 , see fig. 10 g D Turn-Off Delay Time t -30- d(off) Fall Time t -25- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -7.5 - S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 2.0 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 8.0 S SM p - n junction diode b Body Diode Voltage V T = 25 C, I = 2.0 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 290 580 ns rr b T = 25 C, I = 2.0 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.67 1.3 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S13-0166-Rev. E, 04-Feb-13 Document Number: 91285 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000