X-On Electronics has gained recognition as a prominent supplier of SIZF906ADT-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIZF906ADT-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIZF906ADT-T1-GE3 Vishay

SIZF906ADT-T1-GE3 electronic component of Vishay
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Part No.SIZF906ADT-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F
Datasheet: SIZF906ADT-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1781 ea
Line Total: USD 0.18 
Availability - 5630
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5630
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1781
10 : USD 0.1754
25 : USD 0.1727
50 : USD 0.17
100 : USD 0.1675
250 : USD 0.1647
500 : USD 0.1621
1000 : USD 0.1594
3000 : USD 0.1568

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SIZF906ADT-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIZF906ADT-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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SiZF906ADT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES TrenchFET Gen IV power MOSFET SkyFET low-side MOSFET with integrated Schottky 100 % R and UIS tested g Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 V /D APPLICATIONS N-Channel 1 IN 1 MOSFET CPU core power PRODUCT SUMMARY G /G HS 1 Computer / server peripherals CHANNEL-1 CHANNEL-2 G Return/S V /S -D POL 1 1 SW 1 2 V (V) 30 30 DS Synchronous buck converter R max. ( ) at V = 10 V 0.00380 0.00117 DS(on) GS Telecom DC/DC R max. ( ) at V = 4.5 V 0.00530 0.00158 DS(on) GS Schottky G /G LS 2 Diode Q typ. (nC) 11 46 g a I (A) 60 60 D N-Channel 2 MOSFET Configuration Dual GND/S 2 ORDERING INFORMATION Package PowerPAIR 6 x 5F Lead (Pb)-free and halogen-free SiZF906ADT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL CHANNEL-1CHANNEL-2UNIT Drain-source voltage V 30 DS V Gate-source voltage V +20, -16 GS a a T = 25 C 60 60 C a a T = 70 C 60 60 C Continuous drain current (T = 150 C) I J D b, c b, c T = 25 C 27 52 A b, c b, c T = 70 C 21.7 41 A A Pulsed drain current (t = 100 s) I 80 100 DM a T = 25 C 31.6 60 C Continuous source-drain diode current I S b, c b, c T = 25 C 3.7 4.1 A Single pulse avalanche current I 18 19 AS L = 0.1 mH Single pulse avalanche energy E 16 18 mJ AS T = 25 C 38 83 C T = 70 C 24 53 C Maximum power dissipation P W D b, c b, c T = 25 C 4.5 5 A b, c b, c T = 70 C 2.9 3.2 A Operating junction and storage temperature range T , T -55 to +150 J stg C d, e Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS CHANNEL-1 CHANNEL-2 PARAMETER SYMBOL UNIT TYP. MAX. TYP. MAX. b, f Maximum junction-to-ambient t 10 s R 22 28 20 25 thJA C/W Maximum junction-to-case (source) Steady state R 2.6 3.3 1.2 1.5 thJC Notes a. Package limited b. Surface mounted on 1 x 1 FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc 73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 60 C/W for channel-1 and 60 C/W for channel-2 S17-1403 Rev. A, 11-Sep-17 Document Number: 75695 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiZF906ADT www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Ch-1 30 - - Drain-source breakdown voltage V V = 0 V, I = 250 A DS GS D Ch-2 30 - - V Ch-1 1.1 - 2.2 Gate-source threshold voltage V V = V , I = 250 A GS(th) DS GS D Ch-2 1.1 - 2.2 Ch-1 - - 100 Gate-source leakage I V = 0 V, V = +20 V, -16 V nA GSS DS GS Ch-2 - - 100 Ch-1 - - 1 V = 30 V, V = 0 V DS GS Ch-2 - 50 250 Zero Gate voltage drain current I A DSS Ch-1 - - 5 V = 30 V, V = 0 V, T = 55 C DS GS J Ch-2 - 300 3000 Ch-1 20 - - b On-state drain current I V 5 V, V = 10 V A D(on) DS GS Ch-2 20 - - V = 10 V, I = 15 A Ch-1 - 0.00300 0.00380 GS D V = 10 V, I = 20 A Ch-2 - 0.00090 0.00117 GS D b Drain-source on-state resistance R DS(on) V = 4.5 V, I = 10 A Ch-1 - 0.00400 0.00530 GS D V = 4.5 V, I = 15 A Ch-2 - 0.00120 0.00158 GS D V = 10 V, I = 15 A Ch-1 - 130 - DS D b Forward transconductance g S fs V = 10 V, I = 20 A Ch-2 130 - DS D a Dynamic Ch-1 - 2000 - Input capacitance C iss Ch-2 - 8200 - Channel-1 Ch-1 - 680 - Output capacitance C V = 15 V, V = 0 V, f = 1 MHz pF oss DS GS Ch-2 - 3700 - Ch-1 - 50 - Channel-2 Reverse transfer capacitance C rss Ch-2 - 260 - V = 15 V, V = 0 V, f = 1 MHz DS GS Ch-1 - 0.025 0.050 C /C ratio rss iss Ch-2 0.033 0.070 Ch-1 - 24.5 49 V = 15 V, V = 10 V, I = 20 A DS GS D Ch-2 - 100 200 Total gate charge Q g Ch-1 11 22 Channel-1 Ch-2 - 46 92 V = 15 V, V = 4.5 V, I = 20 A DS GS D Ch-1 - 5.1 - Gate-source charge Q nC gs Ch-2 - 17.1 - Channel-2 Ch-1 - 1.3 - V = 15 V, V = 4.5 V, I = 20 A DS GS D Gate-drain charge Q gd Ch-2 - 7.2 - Ch-1 - 21 - Output charge Q V = 15 V, V = 0 V oss DS GS Ch-2 - 96 - Ch-1 0.2 1 2 Gate resistance R f = 1 MHz g Ch-2 0.12 0.6 1.2 S17-1403 Rev. A, 11-Sep-17 Document Number: 75695 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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