X-On Electronics has gained recognition as a prominent supplier of SM5S36AHE3/2D ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SM5S36AHE3/2D ESD Suppressors / TVS Diodes are a product manufactured by Vishay. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SM5S36AHE3/2D Vishay

SM5S36AHE3/2D electronic component of Vishay
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Part No.SM5S36AHE3/2D
Manufacturer: Vishay
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 5W 36V 5% Unidir AEC-Q101 Qualified
Datasheet: SM5S36AHE3/2D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 750
Multiples : 1
750 : USD 0
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We are delighted to provide the SM5S36AHE3/2D from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SM5S36AHE3/2D and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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SM5S10A thru SM5S36A www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES Junction passivation optimized design passivated anisotropic rectifier technology T = 175 C capability suitable for high reliability J and automotive requirement Available in uni-directional polarity only Low leakage current Low forward voltage drop DO-218AB High surge capability Meets ISO7637-2 surge specification (varied by test condition) Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C AEC-Q101 qualified Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 V 10 V to 36 V WM V 11.1 V to 44.2 V BR TYPICAL APPLICATIONS P (10 x 1000 s) 3600 W PPM Use in sensitive electronics protection against voltage P (10 x 10 000 s) 2800 W PPM transients induced by inductive load switching and lighting, P 5 W D especially for automotive load dump protection application. I 500 A FSM T max. 175 C J MECHANICAL DATA Polarity Uni-directional Case: DO-218AB Package DO-218AB Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified (X denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: heatsink is anode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT with 10/1000 s waveform 3600 Peak pulse power dissipation P W PPM with 10/10 000 s waveform 2800 Power dissipation on infinite heatsink at T = 25 C (fig. 1) P 5.0 W C D (1) Peak pulse current with 10/1000 s waveform I See next table A PPM Peak forward surge current 8.3 ms single half sine-wave I 500 A FSM Operating junction and storage temperature range T , T -55 to +175 C J STG Note (1) Non-repetitive current pulse at T = 25 C A Revision: 04-Nov-16 Document Number: 88382 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SM5S10A thru SM5S36A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN MAXIMUM MAXIMUM REVERSE MAX. PEAK MAXIMUM TEST STAND-OFF VOLTAGE REVERSE LEAKAGE PULSE CURRENT CLAMPING DEVICE CURRENT VOLTAGE V (V) LEAKAGE AT V AT 10/1000 s VOLTAGE BR WM TYPE I V T WM AT V T = 175 C WAVEFORM AT I WM J PPM (mA) (V) MIN. MAX. I (A) I (A) (A) V (V) D D C SM5S10A 11.1 12.3 5.0 10.0 15 250 212 17.0 SM5S11A 12.2 13.5 5.0 11.0 10 150 198 18.2 SM5S12A 13.3 14.7 5.0 12.0 10 150 181 19.9 SM5S13A 14.4 15.9 5.0 13.0 10 150 167 21.5 SM5S14A 15.6 17.2 5.0 14.0 10 150 155 23.2 SM5S15A 16.7 18.5 5.0 15.0 10 150 148 24.4 SM5S16A 17.8 19.7 5.0 16.0 10 150 138 26.0 SM5S17A 18.9 20.9 5.0 17.0 10 150 130 27.6 SM5S18A 20.0 22.1 5.0 18.0 10 150 123 29.2 SM5S20A 22.2 24.5 5.0 20.0 10 150 111 32.4 SM5S22A 24.4 26.9 5.0 22.0 10 150 101 35.5 SM5S24A 26.7 29.5 5.0 24.0 10 150 93 38.9 SM5S26A 28.9 31.9 5.0 26.0 10 150 86 42.1 SM5S28A 31.1 34.4 5.0 28.0 10 150 79 45.4 SM5S30A 33.3 36.8 5.0 30.0 10 150 74 48.4 SM5S33A 36.7 40.6 5.0 33.0 10 150 68 53.3 SM5S36A 40.0 44.2 5.0 36.0 10 150 62 58.1 Note For all types maximum V = 2.0 V at I = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses F F per minute maximum THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to case R 1.0 C/W JC ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 13 diameter plastic tape and reel, (1) SM5S10AHE3 A/I 2.505 I 750 anode towards the sprocket hole Note (1) AEC-Q101 qualified Revision: 04-Nov-16 Document Number: 88382 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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