X-On Electronics has gained recognition as a prominent supplier of VESD05A1C-HD1-GS08 ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. VESD05A1C-HD1-GS08 ESD Suppressors / TVS Diodes are a product manufactured by Vishay. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

VESD05A1C-HD1-GS08 Vishay

VESD05A1C-HD1-GS08 electronic component of Vishay
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Part No.VESD05A1C-HD1-GS08
Manufacturer: Vishay
Category: ESD Suppressors / TVS Diodes
Description: Vishay Semiconductors ESD Suppressors 5 Volt 8amp
Datasheet: VESD05A1C-HD1-GS08 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.319 ea
Line Total: USD 0.32 
Availability - 14696
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14696
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.319
10 : USD 0.2145
100 : USD 0.1012
1000 : USD 0.0858
8000 : USD 0.0715

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Current Rating
Brand
Operating Supply Voltage
Pd - Power Dissipation
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VESD05A1C-HD1-GS08 from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VESD05A1C-HD1-GS08 and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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VESD05A1C-HD1 www.vishay.com Vishay Semiconductors ESD Protection Diode in LLP1006-2L FEATURES Ultra compact LLP1006-2L package Low package height < 0.4 mm 1 2 1-line ESD protection Low leakage current < 0.2 A 20856 Low load capacitance C = 38 pF D (V = 2.5 V f = 1 MHz) R 20855 ESD immunity acc. IEC 61000-4-2 MARKING (example only) 30 kV contact discharge 30 kV air discharge High surge current acc. IEC 61000-4-5 I > 8 A PP XY Soldering can be checked by standard vision inspection. 21121 No X-ray necessary Bar = cathode marking Pin plating NiPdAu (e4) no whisker growth X = date code Y = type code (see table below) e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn) PATENT(S): www.vishay.com/patents click logo to get started DESIGN SUPPORT TOOLS Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Models Available ORDERING INFORMATION TAPED UNITS PER REEL DEVICE NAME ORDERING CODE MINIMUM ORDER QUANTITY (8 mm TAPE on 7 REEL) VESD05A1C-HD1 VESD05A1C-HD1-GS08 8000 8000 PACKAGE DATA PACKAGE TYPE MOLDING COMPOUND MOISTURE DEVICE NAME WEIGHT SOLDERING CONDITIONS NAME CODE FLAMMABILITY RATING SENSITIVITY LEVEL MSL level 1 VESD05A1C-HD1 LLP1006-2L F 0.72 mg UL 94 V-0 Peak temperature max. 260 C (according J-STD-020) ABSOLUTE MAXIMUM RATINGS VESD05A1C-HD1 PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5 t = 8/20 s single shot I 8A P PPM Peak pulse power Acc. IEC 61000-4-5 t = 8/20 s single shot P 80 W P PP Contact discharge acc. IEC 61000-4-2 10 pulses 30 kV ESD immunity V ESD Air discharge acc. IEC 61000-4-2 10 pulses 30 kV Operating temperature Junction temperature T -40 to +125 C J Storage temperature T -55 to +150 C stg PATENT(S): www.vishay.com/patents This Vishay product is protected by one or more United States and international patents. Rev. 1.9, 03-Jan-2019 Document Number: 81798 1 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VESD05A1C-HD1 www.vishay.com Vishay Semiconductors BiAs-MODE (bidirectional asymmetrical protection mode) With the VESD05A1C-HD1 one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (V ) the protection diode RWM between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (V ) is defined by the breakthrough Voltage (V ) level plus the voltage drop at the series impedance C BR (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (V ) clamps the negative F transient close to the ground level. Due to the different clamping levels in forward and reverse direction the VESD05A1C-HD1 clamping behaviour is bidirectional and asymmetrical (BiAs). L1 BiAs Ground 20925 ELECTRICAL CHARACTERISTICS VESD05A1C-HD1 (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N - - 1 lines channel Reverse stand-off voltage Max. reverse working voltage V -- 5 V RWM Reverse voltage At I = 0.2 A V 5- - V R R Reverse current At V = 5 V I - 0.03 0.2 A R R Reverse breakdown voltage At I = 1 mA V 66.7 8 V R BR At I = 1 A V -7.1 8. V PP C Reverse clamping voltage At I = I = 8 A V -9.3 10 V PP PPM C At I = 0.2 A V - 0.95 1.2 V PP F Forward clamping voltage At I = 1 A V -1.1 1.5 V PP F At I = I = 8 A V -1.9 - V PP PPM F At V = 0 V f = 1 MHz C -63 75 pF R D Capacitance At V = 2.5 V f = 1 MHz C -38- pF R D Rev. 1.9, 03-Jan-2019 Document Number: 81798 2 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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