VF10150S www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.59 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology ITO-220AB Low forward voltage drop, low power losses High efficiency operation Solder bath temperature 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 2 1 VF10150S TYPICAL APPLICATIONS PIN 1 PIN 2 For use in high frequency DC/DC converters, switching PIN 3 power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: ITO-220AB I 10 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 150 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 120 A commercial grade FSM V at I = 10 A 0.69 V Terminals: matte tin plated leads, solderable per F F J-STD-002 and JESD 22-B102 T max. 150 C J M3 suffix meets JESD 201 class 1A whisker test Package ITO-220AB Polarity: as marked Diode variation Single Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOLVF10150SUNIT Maximum repetitive peak reverse voltage V 150 V RRM Maximum average forward rectified current (fig. 1) I 10 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 120 A FSM superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage from thermal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 05-Mar-18 Document Number: 89267 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VF10150S www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.79 - F T = 25 C A I = 10 A 1.05 1.20 F (1) Instantaneous forward voltage V V F I = 5 A 0.59 - F T = 125 C A I = 10 A 0.69 0.75 F T = 25 C 1.3 - A A V = 100 V R T = 125 C 1.2 - mA A (2) Reverse current I R T = 25 C - 150 A A V = 150 V R T = 125 C 3 15 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VF10150S UNIT Typical thermal resistance R 4.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE ITO-220AB VF10150S-M3/4W 1.75 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 12 10 Resistive or Inductive Load D = 0.8 D = 0.5 10 D = 0.3 8 D = 0.2 8 6 D = 1.0 6 D = 0.1 4 4 T 2 2 D = t /T t Mounted on Specific Heatsink p p 0 0 02 4 6 8 10 12 0 25 50 75 100 125 150 175 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Dissipation Characteristics Revision: 05-Mar-18 Document Number: 89267 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)