VS-25TTS..FPPbF Series, VS-25TTS..FP-M3 Series
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Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 25 A
FEATURES
Designed and qualified for industrial level
2
Fully isolated package (V = 2500 V )
(A) INS RMS
UL E78996 approved
125 C max. operating junction temperature
Material categorization:
3
for definitions of compliance please see
2
1
Available
www.vishay.com/doc?99912
1 (K)
TO-220AB FULL-PAK (G) 3
APPLICATIONS
Typical usage is in input rectification crowbar (soft start)
PRODUCT SUMMARY
and AC switch in motor control, UPS, welding, and battery
Package TO-220AB FP
charge
Diode variation Single SCR
DESCRIPTION
I 16 A
T(AV)
V /V 800 V, 1200 V The VS-25TTS...FP... high voltage series of silicon
DRM RRM
controlled rectifiers are specifically designed for medium
V 1.25 V
TM
power switching and phase control applications. The glass
I 45 mA
GT
passivation technology used has reliable operation up to
T -40 C to 125 C
J
125 C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter T = 55 C, T = 125 C,
A J
18 22 A
common heatsink of 1 C/W
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I Sinusoidal waveform 16
T(AV)
A
I 25
RMS
V /V 800/1200 V
RRM DRM
I 350 A
TSM
V 16 A, T = 25 C 1.25 V
T J
dV/dt 500 V/s
dI/dt 150 A/s
T -40 to 125 C
J
VOLTAGE RATINGS
V , MAXIMUM PEAK V , MAXIMUM PEAK I /I
RRM DRM RRM DRM
PART NUMBER REVERSE VOLTAGE DIRECT VOLTAGE AT 125 C
V V mA
VS-25TTS08FPPbF, VS-25TTS08FP-M3 800 800
10
VS-25TTS12FPPbF, VS-25TTS12FP-M3 1200 1200
Revision: 13-May-16 Document Number: 94384
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-25TTS..FPPbF Series, VS-25TTS..FP-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
VALUES
PARAMETER SYMBOL TEST CONDITIONS UNITS
TYP. MAX.
Maximum average on-state current I T = 51 C, 180 conduction half sine wave 16
T(AV) C
Maximum RMS on-state current I 25
RMS
A
10 ms sine pulse, rated V applied 300
Maximum peak, one-cycle, RRM
I
TSM
non-repetitive surge current
10 ms sine pulse, no voltage reapplied 350
10 ms sine pulse, rated V applied 450
RRM
2 2 2
Maximum I t for fusing I t A s
10 ms sine pulse, no voltage reapplied 630
2 2 2
Maximum I t for fusing I t t = 0.1ms to 10 ms, no voltage reapplied 6300 A s
Maximum on-state voltage drop V 16 A, T = 25 C 1.25 V
TM J
On-state slope resistance r 12.0 m
t
T = 125 C
J
Threshold voltage V 1.0 V
T(TO)
T = 25 C 0.5
J
Maximum reverse and direct leakage current I /I V = Rated V /V
RM DM R RRM DRM
T = 125 C 10
J
mA
Anode supply = 6 V, resistive load, initial I = 1 A,
T
Holding current I - 150
H
T = 25 C
J
Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 200
L J
Maximum rate of rise of off-state voltage dV/dt T = T max., linear to 80 %, V = R - k = Open 500 V/s
J J DRM g
Maximum rate of rise of turned-on current dI/dt 150 A/s
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P 8.0
GM
W
Maximum average gate power P 2.0
G(AV)
Maximum peak positive gate current + I 1.5 A
GM
Maximum peak negative gate voltage - V 10 V
GM
Anode supply = 6 V, resistive load, T = - 10 C 60
J
Maximum required DC gate current to trigger I Anode supply = 6 V, resistive load, T = 25 C 45 mA
GT J
Anode supply = 6 V, resistive load, T = 125 C 20
J
Anode supply = 6 V, resistive load, T = - 10 C 2.5
J
Maximum required DC gate
V Anode supply = 6 V, resistive load, T = 25 C 2.0
GT J
voltage to trigger
V
Anode supply = 6 V, resistive load, T = 125 C 1.0
J
Maximum DC gate voltage not to trigger V 0.25
GD
T = 125 C, V = Rated value
J DRM
Maximum DC gate current not to trigger I 2.0 mA
GD
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time t T = 25 C 0.9
gt J
Typical reverse recovery time t 4 s
rr
T = 125 C
J
Typical turn-off time t 110
q
Revision: 13-May-16 Document Number: 94384
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000