VSMG2000X01, VSMG2020X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH FEATURES Package type: surface mount VSMG2000X01 VSMG2020X01 Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 AEC-Q101 qualified Peak wavelength: = 850 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 12 21725-2 Low forward voltage Suitable for high pulse current operation Terminal configurations: gullwing or reserve gullwing DESCRIPTION Package matches with detector VEMD2000X01 series VSMG2000X01 series are infrared, 850 nm emitting diodes Floor life: 4 weeks, MSL 2a, acc. J-STD-020 in GaAlAs (DH) technology with high radiant power and high Material categorization: For definitions of compliance speed, molded in clear, untinted plastic packages (with lens) please see www.vishay.com/doc 99912 for surface mounting (SMD). APPLICATIONS IrDA compatible data transmission IR-illumination (CCTV) Miniature light barrier Photointerrupters Optical switch Shaft encoders IR emitter source for proximity applications PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSMG2000X01 40 12 850 20 VSMG2020X01 40 12 850 20 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMG2000X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMG2020X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity Rev. 1.2, 23-Jan-13 Document Number: 85194 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMG2000X01, VSMG2020X01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 170 mW V Junction temperature T 100 C j Operating temperature range T - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Acc. figure 9, J-STD-020 T 260 C sd J-STD-051, leads 7 mm, Thermal resistance junction/ambient R 250 K/W thJA soldered on PCB 120 180 160 100 140 120 80 100 60 80 R = 250 K/W thJA R = 250 K/W thJA 40 60 40 20 20 0 0 0 1020 3040506070 8090100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 21341 21342 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.25 1.45 1.7 V F p F Forward voltage I = 1 A, t = 100 s V 2.3 V F p F I = 1 mA TK - 1.8 mV/K F VF Temperature coefficient of V F I = 100 mA TK - 1.1 mV/K F VF Reverse current V = 5 V I 10 A R R 2 Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C 125 pF R J I = 100 mA, t = 20 ms I 20 40 60 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 350 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 40 mW F p e Temperature coefficient of I = 100 mA TK - 0.35 %/K e F e Angle of half intensity 12 deg Peak wavelength I = 30 mA 830 850 870 nm F p Spectral bandwidth I = 30 mA 35 nm F Temperature coefficient of I = 30 mA TK 0.25 nm/K p F p Rise time I = 100 mA, 20 % to 80 % t 20 ns F r Fall time I = 100 mA, 20 % to 80 % t 20 ns F f Cut-off frequency I = 70 mA, I = 30 mA pp f 23 MHz DC AC c Virtual source diameter d 1.5 mm Rev. 1.2, 23-Jan-13 Document Number: 85194 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F