VS-UFH60BA65 www.vishay.com Vishay Semiconductors Insulated Single Phase Hyperfast Bridge (Power Modules), 60 A FEATURES Hyperfast and soft recovery characteristic Electrically isolated base plate Simplified mechanical designs, rapid assembly High operation junction temperature (T max. = 175 C) J Designed and qualified for industrial and consumer level UL approved file E78996 SOT-227 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS DESCRIPTION V 650 V RRM The semiconductor in the SOT-227 package is isolated from I at T = 123 C 60 A O C the copper base plate, allowing for common heatsinks and compact assemblies to be built. t 63 ns rr Type Modules - Bridge, Hyperfast Package SOT-227 Circuit configuration Single phase bridge ABSOLUTE MAXIMUM RATINGS SYMBOL CHARACTERISTICS VALUES UNITS 60 A I O T 123 C C 50 Hz 360 I A FSM 60 Hz 377 50 Hz 648 2 2 I t A s 60 Hz 589 V 650 V RRM T -55 to +175 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM VOLTAGE TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T MAXIMUM J CODE V V mA UFH60BA65 65 650 700 2 ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode breakdown voltage V I = 250 A 650 - - BR R V Forward voltage, per diode V I = 60 A - 1.7 2.35 FM F V = 650 V - 1.0 100 R Reverse leakage current, per leg I A RM V = 650 V, T = 150 C - 250 - R J RMS isolation voltage base plate V f = 50 Hz, any terminal to case, t = 1 min 2500 - - V ISOL Revision: 25-Apr-2018 Document Number: 96135 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-UFH60BA65 www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Resistive or inductive load 60 A Maximum DC output current I O at case temperature 123 C t = 10 ms 360 No voltage reapplied t = 8.3 ms 377 Maximum peak, one-cycle I A FSM non-repetitive forward current t = 10 ms 303 100 % V RRM reapplied t = 8.3 ms 317 Initial T = 25 C J t = 10 ms 648 No voltage reapplied t = 8.3 ms 589 2 2 2 Maximum I t for fusing I t A s t = 10 ms 458 100 % V RRM reapplied t = 8.3 ms 417 2 2 2 2 Maximum I t for fusing I tI t for time t = I t x t 0.1 t 10 ms, V = 0 V 6.4 kA s x 2 x x RRM Low level of threshold voltage, per leg V 16.49 V F(T0)1 (16.7 % x x I ) < I < x I , T = T maximum F(AV) F(AV) J J Low level value of forward slope resistance r 0.88 m f1 High level of threshold voltage, per leg V 15.87 V F(T0)2 (I > x I ), T = T maximum F(AV) J J High level value of forward slope resistance r 1.16 m f2 Maximum forward voltage, per diode V I = 60 A 2.35 V FM F RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS T = 25 C, I = 50 A, V = 200 V, J F R 63 dI /dt = 200 A/s F Typical reverse recovery time, per diode t ns rr T = 125 C, I = 50 A, V = 200 V, J F R 134 dI /dt = 200 A/s F T = 25 C, I = 50 A, V = 200 V, I J F R FM 4.1 t rr dI /dt = 200 A/s F Typical reverse recovery current, per diode I A rr T = 125 C, I = 50 A, V = 200 V, t J F R 11.4 dI dI /dt = 200 A/s R F Q rr dt T = 25 C, I = 50 A, V = 200 V, J F R I RM(REC) 130 dI /dt = 200 A/s F Typical reverse recovery charge, per diode Q nC rr T = 125 C, I = 50 A, V = 200 V, J F R 765 dI /dt = 200 A/s F V = 650 V 77 pF Typical junction capacitance C T R THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range T , T -55 - 175 C J Stg Thermal resistance junction to case R - - 0.91 thJC C/W Thermal resistance case to heatsink R Flat, greased surface - 0.1 - thCS Weight -30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Mounting torque Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) Case style SOT-227 Revision: 25-Apr-2018 Document Number: 96135 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000