X-On Electronics has gained recognition as a prominent supplier of W29N04GVBIAA NAND Flash across the USA, India, Europe, Australia, and various other global locations. W29N04GVBIAA NAND Flash are a product manufactured by Winbond. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

W29N04GVBIAA Winbond

Name: W29N04GVBIAA
Brand: Winbond
SKU: W29N04GVBIAA_Winbond
Availability: OutOfStock
Rating: 5 (11 reviews)

W29N04GVBIAA electronic component of Winbond

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Part No.	W29N04GVBIAA
Manufacturer:	Winbond
Category:	NAND Flash
Description:	NAND Flash 4G-bit NAND flash, 3V x 8bit
Datasheet:	W29N04GVBIAA Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

W29N04GVBIAA More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 210 Multiples : 210	210 : USD 9.175 840 : USD 9.0825 1050 : USD 8.9926 2100 : USD 8.9028 2520 : USD 8.8129 4200 : USD 8.7256 5040 : USD 8.6384 10500 : USD 8.5512 21000 : USD 8.4653 105000 : USD 8.3807	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 9.0047 10 : USD 6.0541 25 : USD 5.9382 50 : USD 5.9066 100 : USD 5.3802 250 : USD 5.3802 500 : USD 5.0749 1000 : USD 4.9485 5000 : USD 4.6326	N/A Obsolete

We are delighted to provide the W29N04GVBIAA from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W29N04GVBIAA and other electronic components in the NAND Flash category and beyond.

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Additional Infomation About Product

W29N04GV W29N04GV 4G-BIT 3.3V NAND FLASH MEMORY th Release Date: December 12 , 2017 1 Revision C W29N04GV Table of Contents 1. GENERAL DESCRIPTION ............................................................................................................ 7 2. FEATURES .................................................................................................................................... 7 3. PACKAGE TYPES AND PIN CONFIGURATIONS ....................................................................... 8 3.1 Pin assignment 48-pin TSOP1(x8) ....................................................................................... 8 3.2 Pin assignment 63 ball VFBGA (x8) ..................................................................................... 9 3.3 Pin Descriptions .................................................................................................................. 10 4. PIN DESCRITPIONS ................................................................................................................... 11 4.1 Chip Enable ( CE) .............................................................................................................. 11 4.2 Write Enable ( WE) ............................................................................................................ 11 4.3 Read Enable ( RE) ............................................................................................................. 11 4.4 Address Latch Enable (ALE) .............................................................................................. 11 4.5 Command Latch Enable (CLE) ........................................................................................... 11 4.6 Write Protect ( WP) ............................................................................................................ 11 4.7 Ready/Busy (RY/ BY) ........................................................................................................ 11 4.8 Input and Output (I/Ox) ....................................................................................................... 11 5. BLOCK DIAGRAM ....................................................................................................................... 12 6. MEMORY ARRAY ORGANIZATION ........................................................................................... 13 6.1 Array Organization (x8) ....................................................................................................... 13 7. MODE SELECTION TABLE ........................................................................................................ 14 8. COMMAND TABLE ...................................................................................................................... 15 9. DEVICE OPERATIONS ............................................................................................................... 17 9.1 READ operation .................................................................................................................. 17 9.1.1 PAGE READ (00h-30h) ........................................................................................................ 17 9.1.2 CACHE READ OPERATIONS .............................................................................................. 17 9.1.3 TWO PLANE READ (00h-00h-30h) ...................................................................................... 21 9.1.4 RANDOM DATA OUTPUT (05h-E0h) ................................................................................... 23 9.1.5 READ ID (90h) ...................................................................................................................... 25 9.1.6 READ PARAMETER PAGE (ECh) ....................................................................................... 26 9.1.7 READ STATUS (70h) ........................................................................................................... 28 9.1.8 READ STATUS ENHANCED (78h) ...................................................................................... 30 9.1.9 READ UNIQUE ID (EDh) ...................................................................................................... 31 9.2 PROGRAM operation ......................................................................................................... 32 9.2.1 PAGE PROGRAM (80h-10h) ................................................................................................ 32 9.2.2 SERIAL DATA INPUT (80h) ................................................................................................. 32 9.2.3 RANDOM DATA INPUT (85h) .............................................................................................. 33 9.2.4 CACHE PROGRAM (80h-15h) ............................................................................................. 33 9.2.5 TWO PLANE PAGE PROGRAM .......................................................................................... 35 9.3 COPY BACK operation ....................................................................................................... 38 9.3.1 READ for COPY BACK (00h-35h) ........................................................................................ 38 9.3.2 PROGRAM for COPY BACK (85h-10h) ................................................................................ 38 9.3.3 TWO PLANE READ for COPY BACK ................................................................................... 39 9.3.4 TWO PLANE PROGRAM for COPY BACK .......................................................................... 39 9.4 BLOCK ERASE operation .................................................................................................. 43 th Release Date: December 12 , 2017 2 Revision C

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

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WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA

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Manufacturer Winbond Winbond
Product Category NAND Flash NAND Flash
RoHS - XON Y Y
Mounting Style Smd/Smt Smd/Smt
Package / Case VFBGA - 63 VFBGA - 63
Series W29n04gv W29n04gv
Memory Size 4 gb it 4 gb it
Interface Type Parallel Parallel
Organisation 512 M X 8 512 M X 8
Data Bus Width 8 bit 8 bit
Supply Voltage - Min 2.7 V 2.7 V
Supply Voltage - Max 3.6 V 3.6 V
Supply Current - Max 35 mA 35 mA
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature + 85 C + 85 C
Packaging Tube Tube
Brand Winbond Winbond
Hts Code 8542320051 8542320051
Product Type Nand Flash Nand Flash
Factory Pack Quantity : 210 210
Subcategory Memory & Data Storage Memory & Data Storage