X-On Electronics has gained recognition as a prominent supplier of W29N08GVBIAA NAND Flash across the USA, India, Europe, Australia, and various other global locations. W29N08GVBIAA NAND Flash are a product manufactured by Winbond. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

W29N08GVBIAA Winbond

W29N08GVBIAA electronic component of Winbond
W29N08GVBIAA Winbond
W29N08GVBIAA NAND Flash
W29N08GVBIAA  Semiconductors

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See Product Specifications
Part No. W29N08GVBIAA
Manufacturer: Winbond
Category: NAND Flash
Description: NAND Flash 4G-bit NAND flash, 3V x 8bit
Datasheet: W29N08GVBIAA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 210
Multiples : 210
210 : USD 19.2701
840 : USD 19.1743
1050 : USD 19.0785
2100 : USD 18.9814
2520 : USD 18.8829
4200 : USD 18.7832
5040 : USD 18.6834
10500 : USD 18.5824
21000 : USD 18.48
105000 : USD 18.3763
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 12.6345
10 : USD 11.2342
25 : USD 10.9815
50 : USD 10.9183
N/A

Obsolete
   
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RoHS - XON
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We are delighted to provide the W29N08GVBIAA from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W29N08GVBIAA and other electronic components in the NAND Flash category and beyond.

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W29N08GV 2 CHIP STACKED 8G-BIT W29N08GV 8G-BIT 3.3V NAND FLASH MEMORY th Release Date: May 17 , 2018 1 Revision C W29N08GV Table of Contents 1. GENERAL DESCRIPTION ............................................................................................................ 7 2. FEATURES .................................................................................................................................... 7 3. PACKAGE TYPES AND PIN CONFIGURATIONS ....................................................................... 8 3.1 Pin Assignment W29N08GVSIAA 1CE Type 48-pin TSOP1 ............................................... 8 3.2 Pin Assignment W29N08GVSIAD 2CE Type 48-pin TSOP1 ............................................... 9 3.3 Pin Assignment W29N08GVBIAA 1CE Type 63-ball VFBGA ............................................ 10 3.4 Pin Assignment W29N08GVBIAD 2CE Type 63-ball VFBGA ............................................ 11 3.5 Pin Descriptions .................................................................................................................. 12 4. PIN DESCRITPIONS ................................................................................................................... 13 4.1 Chip Enable ( CE) .............................................................................................................. 13 4.2 Write Enable ( WE) ............................................................................................................ 13 4.3 Read Enable ( RE) ............................................................................................................. 13 4.4 Address Latch Enable (ALE) .............................................................................................. 13 4.5 Command Latch Enable (CLE) ........................................................................................... 13 4.6 Write Protect ( WP) ............................................................................................................ 13 4.7 Ready/Busy (RY/ BY) ........................................................................................................ 13 4.8 Input and Output (I/Ox) ....................................................................................................... 13 5. SINGLE DIE BLOCK DIAGRAM .................................................................................................. 14 6. MEMORY ARRAY ORGANIZATION ........................................................................................... 15 6.1 Array Organization ............................................................................................................ 15 7. MODE SELECTION TABLE ........................................................................................................ 16 8. COMMAND TABLE ...................................................................................................................... 17 9. DEVICE OPERATIONS ............................................................................................................... 19 9.1 READ operation .................................................................................................................. 19 9.1.1 PAGE READ (00h-30h) ........................................................................................................ 19 9.1.2 CACHE READ OPERATIONS .............................................................................................. 19 9.1.3 TWO PLANE READ (00h-00h-30h) ...................................................................................... 23 9.1.4 RANDOM DATA OUTPUT (05h-E0h) ................................................................................... 25 9.1.5 READ ID (90h) ...................................................................................................................... 27 9.1.6 READ PARAMETER PAGE (ECh) ....................................................................................... 28 9.1.7 READ STATUS (70h) ........................................................................................................... 30 9.1.8 READ STATUS ENHANCED (78h) ...................................................................................... 32 9.1.9 READ UNIQUE ID (EDh) ...................................................................................................... 33 9.2 PROGRAM operation ......................................................................................................... 34 9.2.1 PAGE PROGRAM (80h-10h) ................................................................................................ 34 9.2.2 SERIAL DATA INPUT (80h) ................................................................................................. 34 9.2.3 RANDOM DATA INPUT (85h) .............................................................................................. 35 9.2.4 CACHE PROGRAM (80h-15h) ............................................................................................. 35 9.2.5 TWO PLANE PAGE PROGRAM .......................................................................................... 37 9.3 COPY BACK operation ....................................................................................................... 40 9.3.1 READ for COPY BACK (00h-35h) ........................................................................................ 40 9.3.2 PROGRAM for COPY BACK (85h-10h) ................................................................................ 40 9.3.3 TWO PLANE READ for COPY BACK ................................................................................... 41 th Release Date: May 17 , 2018 2 Revision C

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA
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