X-On Electronics has gained recognition as a prominent supplier of W9412G6KH-5 TR DRAM across the USA, India, Europe, Australia, and various other global locations. W9412G6KH-5 TR DRAM are a product manufactured by Winbond. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

W9412G6KH-5 TR Winbond

W9412G6KH-5 TR electronic component of Winbond
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Part No.W9412G6KH-5 TR
Manufacturer: Winbond
Category: DRAM
Description: DRAM 128Mb DDR SDRAM x16 200MHz, 46nm T&R
Datasheet: W9412G6KH-5 TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 1.419 ea
Line Total: USD 1419 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 1.791
2000 : USD 1.7094
5000 : USD 1.6742

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 1.419
2000 : USD 1.375
5000 : USD 1.364
10000 : USD 1.364
25000 : USD 1.342

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 1.4763

   
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We are delighted to provide the W9412G6KH-5 TR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W9412G6KH-5 TR and other electronic components in the DRAM category and beyond.

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W9412G6KH 2M 4 BANKS 16 BITS DDR SDRAM Table of Contents- 1. GENERAL DESCRIPTION ......................................................................................................... 4 2. FEATURES ................................................................................................................................. 4 3. ORDER INFORMATION ............................................................................................................. 4 4. KEY PARAMETERS ................................................................................................................... 5 5. PIN CONFIGURATION ............................................................................................................... 6 6. PIN DESCRIPTION ..................................................................................................................... 7 7. BLOCK DIAGRAM ...................................................................................................................... 8 8. FUNCTIONAL DESCRIPTION.................................................................................................... 9 8.1 Power Up Sequence ....................................................................................................... 9 8.2 Command Function ...................................................................................................... 10 8.2.1 Bank Activate Command ........................................................................... 10 8.2.2 Bank Precharge Command ........................................................................ 10 8.2.3 Precharge All Command ............................................................................ 10 8.2.4 Write Command ......................................................................................... 10 8.2.5 Write with Auto-precharge Command ........................................................ 10 8.2.6 Read Command ......................................................................................... 10 8.2.7 Read with Auto-precharge Command ....................................................... 10 8.2.8 Mode Register Set Command.................................................................... 11 8.2.9 Extended Mode Register Set Command ................................................... 11 8.2.10 No-Operation Command ............................................................................ 11 8.2.11 Burst Read Stop Command ....................................................................... 11 8.2.12 Device Deselect Command ....................................................................... 11 8.2.13 Auto Refresh Command ............................................................................ 11 8.2.14 Self Refresh Entry Command .................................................................... 12 8.2.15 Self Refresh Exit Command ....................................................................... 12 8.2.16 Data Write Enable /Disable Command ...................................................... 12 8.3 Read Operation............................................................................................................. 12 8.4 Write Operation ............................................................................................................. 13 8.5 Precharge ..................................................................................................................... 13 8.6 Burst Termination ......................................................................................................... 13 8.7 Refresh Operation ........................................................................................................ 13 8.8 Power Down Mode ....................................................................................................... 14 8.9 Input Clock Frequency Change during Precharge Power Down Mode ........................ 14 8.10 Mode Register Operation .............................................................................................. 14 8.10.1 Burst Length field (A2 to A0) ...................................................................... 14 8.10.2 Addressing Mode Select (A3) .................................................................... 15 8.10.3 CAS Latency field (A6 to A4) ..................................................................... 16 8.10.4 DLL Reset bit (A8) ..................................................................................... 16 8.10.5 Mode Register /Extended Mode register change bits (BA0, BA1)............. 16 Publication Release Date: Nov. 17, 2014 Revision: A03 - 1 - W9412G6KH 8.10.6 Extended Mode Register field .................................................................... 16 8.10.7 Reserved field ............................................................................................ 16 9. OPERATION MODE ................................................................................................................. 17 9.1 Simplified Truth Table ................................................................................................... 17 9.2 Function Truth Table ..................................................................................................... 18 9.3 Function Truth Table for CKE ....................................................................................... 21 9.4 Simplified Stated Diagram ............................................................................................ 22 10. ELECTRICAL CHARACTERISTICS ......................................................................................... 23 10.1 Absolute Maximum Ratings .......................................................................................... 23 10.2 Recommended DC Operating Conditions .................................................................... 23 10.3 Capacitance .................................................................................................................. 24 10.4 Leakage and Output Buffer Characteristics .................................................................. 24 10.5 DC Characteristics ........................................................................................................ 25 10.6 AC Characteristics and Operating Condition ................................................................ 26 10.7 AC Test Conditions ....................................................................................................... 27 11. SYSTEM CHARACTERISTICS FOR DDR SDRAM ................................................................. 29 11.1 Table 1: Input Slew Rate for DQ, DQS, and DM .......................................................... 29 11.2 Table 2: Input Setup & Hold Time Derating for Slew Rate ........................................... 29 11.3 Table 3: Input/Output Setup & Hold Time Derating for Slew Rate ............................... 29 11.4 Table 4: Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate ................ 29 11.5 Table 5: Output Slew Rate Characteristics (x16 Devices only) .................................... 29 11.6 Table 6: Output Slew Rate Matching Ratio Characteristics ......................................... 30 11.7 Table 7: AC Overshoot/Undershoot Specification for Address and Control Pins ......... 30 11.8 Table 8: Overshoot/Undershoot Specification for Data, Strobe, and Mask Pins .......... 31 11.9 System Notes:............................................................................................................... 32 12. TIMING WAVEFORMS ............................................................................................................. 34 12.1 Command Input Timing ................................................................................................ 34 12.2 Timing of the CLK Signals ............................................................................................ 34 12.3 Read Timing (Burst Length = 4) ................................................................................... 35 12.4 Write Timing (Burst Length = 4) .................................................................................... 36 12.5 DM, DATA MASK (W9412G6KH) ................................................................................. 37 12.6 Mode Register Set (MRS) Timing ................................................................................. 38 12.7 Extend Mode Register Set (EMRS) Timing .................................................................. 39 12.8 Auto-precharge Timing (Read Cycle, CL = 2) .............................................................. 40 12.9 Auto-precharge Timing (Read cycle, CL = 2), continued ............................................. 41 12.10 Auto-precharge Timing (Write Cycle) .......................................................................... 42 12.11 Read Interrupted by Read (CL = 2, BL = 2, 4, 8) ........................................................ 43 12.12 Burst Read Stop (BL = 8) ............................................................................................ 43 12.13 Read Interrupted by Write & BST (BL = 8) .................................................................. 44 12.14 Read Interrupted by Precharge (BL = 8) ..................................................................... 44 12.15 Write Interrupted by Write (BL = 2, 4, 8) ..................................................................... 45 12.16 Write Interrupted by Read (CL = 2, BL = 8) ................................................................ 45 12.17 Write Interrupted by Read (CL = 3, BL = 4) ................................................................ 46 12.18 Write Interrupted by Precharge (BL = 8) ..................................................................... 46 12.19 2 Bank Interleave Read Operation (CL = 2, BL = 2) ................................................... 47 Publication Release Date: Nov. 17, 2014 Revision: A03 - 2 -

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA
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