V 650 V
DS
I @ 25C 120 A
D
C3M0015065D
R 15 m
DS(on)
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
N-Channel Enhancement Mode
Features Package
rd
3 Generation SiC MOSFET technology
High blocking voltage with low on-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Benefits
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
Easy to parallel and simple to drive
Enable new hard switching PFC topologies (Totem-Pole)
Applications
EV charging
Solar PV Inverters
Marking
Part Number Package
UPS
SMPS
C3M0015065D TO-247-3 C3M0015065D
DC/DC converters
Maximum Ratings (T = 25 C unless otherwise specified)
C
Symbol Parameter Value Unit Test Conditions Note
Drain - Source Voltage 650 V V = 0 V, I = 100 A
V GS D
DSmax
Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1
V
GSmax
Gate - Source Voltage (static) -4/+15 V Static Note: 2
V
GSop
120
V = 15 V, T = 25C
GS C
Fig. 19
Continuous Drain Current A
I
D
Note: 3
96 V = 15 V, T = 100C
GS C
Pulsed Drain Current 223 A
I Pulse width t limited by T
D(pulse)
jmax
P
P Power Dissipation 416 W T =25C, T = 175 C Fig. 20
C J
D
-40 to
Operating Junction and Storage Temperature C
T , T
J stg
+175
Solder Temperature 260 C 1.6mm (0.063) from case for 10s
T
L
1 Nm
Mounting Torque M3 or 6-32 screw
M
d
8.8 lbf-in
Note (1): When using MOSFET Body Diode V = -4V/+19V
GSmax
Note (2): MOSFET can also safely operate at 0/+15 V
Note (3): Package limited to 120 A
1 C3M0015065D Rev. B, 02-2020Electrical Characteristics (T = 25C unless otherwise specified)
C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V Drain-Source Breakdown Voltage 650 V V = 0 V, I = 100 A
(BR)DSS GS D
1.8 2.3 3.6 V = V , I = 15.5 mA
V DS GS D
VGS(th) Gate Threshold Voltage Fig. 11
1.9 V V = V , I = 15.5 mA, T = 175C
DS GS D J
I Zero Gate Voltage Drain Current 1 50 A V = 650 V, V = 0 V
DSS DS GS
I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V
GSS GS DS
10.5 15 21 V = 15 V, I = 55.8A
GS D
Fig. 4,
R Drain-Source On-State Resistance m
DS(on)
5,6
20 VGS = 15 V, ID = 55.8A, TJ = 175C
42 VDS= 20 V, IDS= 55.8 A
g Transconductance S Fig. 7
fs
40 V = 20 V, I = 55.8 A, T = 175C
DS DS J
C Input Capacitance 5011
iss
Fig. 17,
C Output Capacitance 289
oss
18
VGS = 0 V, VDS = 400 V
C Reverse Transfer Capacitance 31
rss pF
f = 100 Khz
C Effective Output Capacitance (Energy Related) 357 Note: 4
o(er)
AC
V = 25 mV
C Effective Output Capacitance (Time Related) 516 Note: 4
o(tr)
E C Stored Energy 67 J Fig. 16
oss oss
V = 400 V, V = -4 V/15 V, I = 55.8 A,
DS GS
E Turn-On Switching Energy (Body Diode) 1500 D
ON
R = 5 , L= 57.6 H, T = 175C
J
J Fig. 25
G(ext)
EOFF Turn Off Switching Energy (Body Diode) 700
FWD = Internal Body Diode of MOSFET
V = 400 V, V = -4 V/15 V, I = 55.8 A,
DS GS
E Turn-On Switching Energy (External Diode) 1200
ON D
R = 5 , L= 57.6 H, T = 175C
J
J Fig. 25
G(ext)
E Turn Off Switching Energy (External Diode) 1000
OFF
FWD = External SiC DIODE
t Turn-On Delay Time 22
d(on)
V = 400 V, V = -4 V/15 V
DD GS
t Rise Time 125
r
I = 55.8 A, R = 5 , L= 57.6 H
D G(ext)
ns Fig. 26
Timing relative to V
DS
td(off) Turn-Off Delay Time 58
Inductive load
tf Fall Time 25
,
R Internal Gate Resistance 1.5 f = 1 MHz V = 25 mV
G(int) AC
Qgs Gate to Source Charge 54
V = 400 V, V = -4 V/15 V
DS GS
Qgd Gate to Drain Charge 62 ID = 55.8 A
nC Fig. 12
Per IEC60747-8-4 pg 21
Q Total Gate Charge 188
g
Note (4): Co(er), a lumped capacitance that gives same stored energy as Coss while Vds is rising from 0 to 400V
Co(tr), a lumped capacitance that gives same charging time as Coss while Vds is rising from 0 to 400V
2 C3M0015065D Rev. B, 02-2020