X-On Electronics has gained recognition as a prominent supplier of C3M0016120K SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. C3M0016120K SiC MOSFETs are a product manufactured by Wolfspeed. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

C3M0016120K Wolfspeed

C3M0016120K electronic component of Wolfspeed
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Part No.C3M0016120K
Manufacturer: Wolfspeed
Category: SiC MOSFETs
Description: SiC MOSFETs SiC MOSFET G3 1200V 16mOhms
Datasheet: C3M0016120K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
30: USD 84.019 ea
Line Total: USD 2520.57 
Availability - 497
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 30  Multiples: 30
Pack Size: 30
Availability Price Quantity
497
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 30
Multiples : 30
30 : USD 84.019
3000 : USD 83.174
6000 : USD 82.342
9000 : USD 81.523
12000 : USD 80.704
15000 : USD 79.898
30000 : USD 79.105

288
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 84.359
30 : USD 80.058

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Package / Case
Hts Code
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We are delighted to provide the C3M0016120K from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the C3M0016120K and other electronic components in the SiC MOSFETs category and beyond.

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V 1200 V DS I @ 25C 115 A D C3M0016120K R 16 m DS(on) Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package 3rd generation SiC MOSFET technology TAB Drain Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Q ) rr Halogen free, RoHS compliant Benefits Drain (Pin 1, TAB) Reduce switching losses and minimize gate ringing 1 2 3 4 D S S G Higher system efficiency Reduce cooling requirements Increase power density Gate Increase system switching frequency (Pin 4) Driver Power Source Source Applications (Pin 3) (Pin 2) Solar inverters EV motor drive High voltage DC/DC converters Marking Part Number Package Switched mode power supplies Load switch C3M0016120K TO 247-4 C3M0016120K Maximum Ratings (T = 25 C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note Drain - Source Voltage 1200 V V = 0 V, I = 100 A V GS D DSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note 1 V GSmax Gate - Source Voltage (static) -4/+15 V Static Note 2 V GSop 115 V = 15 V, T = 25C GS C Continuous Drain Current A Fig. 19 I D 85 VGS = 15 V, TC = 100C Pulsed Drain Current 250 A Pulse width t limited by T I jmax D(pulse) P P Power Dissipation 556 W T =25C, T = 175 C Fig. 20 C J D -40 to Operating Junction and Storage Temperature C T , T J stg +175 Solder Temperature 260 C 1.6mm (0.063) from case for 10s T L Note (1): When using MOSFET Body Diode V = -4V/+19V GSmax Note (2): MOSFET can also safely operate at 0/+15 V 1 C3M0016120K Rev. -, 04-2019Electrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 1200 V V = 0 V, I = 100 A (BR)DSS GS D 1.8 2.5 3.6 V VDS = VGS, ID = 23 mA V Gate Threshold Voltage Fig. 11 GS(th) 2.0 V V = V , I = 23 mA, T = 175C DS GS D J IDSS Zero Gate Voltage Drain Current 1 50 A V = 1200 V, V = 0 V DS GS I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V GSS GS DS 11.2 16 22.3 V = 15 V, I = 75 A GS D Fig. 4, R Drain-Source On-State Resistance m DS(on) 5, 6 28.8 V = 15 V, I = 75 A, T = 175C GS D J 53 VDS= 20 V, IDS= 75 A gfs Transconductance S Fig. 7 47 V = 20 V, I = 75 A, T = 175C DS DS J C Input Capacitance 6085 iss VGS = 0 V, VDS = 1000 V Fig. 17, Coss Output Capacitance 230 pF 18 f = 1 MHz Crss Reverse Transfer Capacitance 13 AC V = 25 mV E C Stored Energy 130 J Fig. 16 oss oss EON Turn-On Switching Energy (SiC Diode FWD) 1.1 V = 800 V, V = -4 V/+15 V, I = 75 A, DS GS D mJ Fig. 26 R = 2.5, L= 65.7 H, Tj = 175C E Turn Off Switching Energy (SiC Diode FWD) 0.8 OFF G(ext) EON Turn-On Switching Energy (Body Diode FWD) 2.3 V = 800 V, V = -4 V/+15 V, I = 75 A, DS GS D mJ Fig. 26 R = 2.5, L= 65.7 H, Tj = 175C E Turn Off Switching Energy (Body Diode FWD) 0.6 OFF G(ext) t Turn-On Delay Time 34 d(on) V = 800 V, V = -4 V/15 V DD GS t Rise Time 33 r ns R = 2.5 , I = 75 A, L= 65.7 Fig. 27 G(ext) D t Turn-Off Delay Time 65 d(off) Timing relative to V , Inductive load DS t Fall Time 13 f , RG(int) Internal Gate Resistance 2.6 f = 1 MHz V = 25 mV AC Q Gate to Source Charge 67 gs V = 800 V, V = -4 V/15 V DS GS Q Gate to Drain Charge 61 I = 75 A gd nC D Fig. 12 Per IEC60747-8-4 pg 21 Q Total Gate Charge 211 g 2 C3M0016120K Rev. -, 04-2019

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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