V 1200 V
DS
I @ 25C 115 A
D
C3M0016120K
R 16 m
DS(on)
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
N-Channel Enhancement Mode
Features Package
3rd generation SiC MOSFET technology
TAB
Drain
Optimized package with separate driver source pin
8mm of creepage distance between drain and source
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Q )
rr
Halogen free, RoHS compliant
Benefits
Drain
(Pin 1, TAB)
Reduce switching losses and minimize gate ringing
1 2 3 4
D S S G
Higher system efficiency
Reduce cooling requirements
Increase power density
Gate
Increase system switching frequency
(Pin 4)
Driver Power
Source Source
Applications
(Pin 3) (Pin 2)
Solar inverters
EV motor drive
High voltage DC/DC converters
Marking
Part Number Package
Switched mode power supplies
Load switch
C3M0016120K TO 247-4 C3M0016120K
Maximum Ratings (T = 25 C unless otherwise specified)
C
Symbol Parameter Value Unit Test Conditions Note
Drain - Source Voltage 1200 V V = 0 V, I = 100 A
V GS D
DSmax
Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note 1
V
GSmax
Gate - Source Voltage (static) -4/+15 V Static Note 2
V
GSop
115 V = 15 V, T = 25C
GS C
Continuous Drain Current A Fig. 19
I
D
85 VGS = 15 V, TC = 100C
Pulsed Drain Current 250 A Pulse width t limited by T
I jmax
D(pulse) P
P Power Dissipation 556 W T =25C, T = 175 C Fig. 20
C J
D
-40 to
Operating Junction and Storage Temperature C
T , T
J stg
+175
Solder Temperature 260 C 1.6mm (0.063) from case for 10s
T
L
Note (1): When using MOSFET Body Diode V = -4V/+19V
GSmax
Note (2): MOSFET can also safely operate at 0/+15 V
1 C3M0016120K Rev. -, 04-2019Electrical Characteristics (T = 25C unless otherwise specified)
C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V Drain-Source Breakdown Voltage 1200 V V = 0 V, I = 100 A
(BR)DSS GS D
1.8 2.5 3.6
V VDS = VGS, ID = 23 mA
V Gate Threshold Voltage Fig. 11
GS(th)
2.0 V V = V , I = 23 mA, T = 175C
DS GS D J
IDSS Zero Gate Voltage Drain Current 1 50 A V = 1200 V, V = 0 V
DS GS
I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V
GSS GS DS
11.2 16 22.3 V = 15 V, I = 75 A
GS D
Fig. 4,
R Drain-Source On-State Resistance m
DS(on)
5, 6
28.8 V = 15 V, I = 75 A, T = 175C
GS D J
53
VDS= 20 V, IDS= 75 A
gfs Transconductance S Fig. 7
47 V = 20 V, I = 75 A, T = 175C
DS DS J
C Input Capacitance 6085
iss
VGS = 0 V, VDS = 1000 V
Fig. 17,
Coss Output Capacitance 230 pF
18
f = 1 MHz
Crss Reverse Transfer Capacitance 13
AC
V = 25 mV
E C Stored Energy 130 J Fig. 16
oss oss
EON Turn-On Switching Energy (SiC Diode FWD) 1.1
V = 800 V, V = -4 V/+15 V, I = 75 A,
DS GS
D
mJ Fig. 26
R = 2.5, L= 65.7 H, Tj = 175C
E Turn Off Switching Energy (SiC Diode FWD) 0.8
OFF G(ext)
EON Turn-On Switching Energy (Body Diode FWD) 2.3
V = 800 V, V = -4 V/+15 V, I = 75 A,
DS GS
D
mJ Fig. 26
R = 2.5, L= 65.7 H, Tj = 175C
E Turn Off Switching Energy (Body Diode FWD) 0.6
OFF
G(ext)
t Turn-On Delay Time 34
d(on)
V = 800 V, V = -4 V/15 V
DD GS
t Rise Time 33
r
ns R = 2.5 , I = 75 A, L= 65.7 Fig. 27
G(ext)
D
t Turn-Off Delay Time 65
d(off)
Timing relative to V , Inductive load
DS
t Fall Time 13
f
,
RG(int) Internal Gate Resistance 2.6 f = 1 MHz V = 25 mV
AC
Q Gate to Source Charge 67
gs
V = 800 V, V = -4 V/15 V
DS GS
Q Gate to Drain Charge 61 I = 75 A
gd nC D Fig. 12
Per IEC60747-8-4 pg 21
Q Total Gate Charge 211
g
2 C3M0016120K Rev. -, 04-2019