V 650 V
DS
I @ 25C 37 A
D
C3M0060065K
R 60 m
DS(on)
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
N-Channel Enhancement Mode
Features Package
TAB
rd
3 Generation SiC MOSFET technology Drain
High blocking voltage with low on-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Benefits
Drain
Higher system efficiency (Pin 1, TAB)
Reduced cooling requirements
1 2 3 4
D S S G
Increased power density
Increased system switching frequency
Easy to parallel and simple to drive
Gate
Enable new hard switching PFC topologies (Totem-Pole)
(Pin 4)
Driver Power
Source Source
Applications
(Pin 3) (Pin 2)
EV charging
Server power supplies
Part Number Package Marking
Solar PV inverters
UPS
C3M0060065K TO-247-4 C3M0060065K
DC/DC converters
Maximum Ratings (T = 25 C unless otherwise specified)
C
Symbol Parameter Value Unit Test Conditions Note
Drain - Source Voltage 650 V V = 0 V, I = 100 A
V GS D
DSmax
Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1
V
GSmax
V Gate - Source Voltage (static) -4/+15 V Static Note: 2
GSop
37
V = 15 V, T = 25C
GS C
I Continuous Drain Current A Fig. 19
D
27
V = 15 V, T = 100C
GS C
I Pulsed Drain Current 53 A
Pulse width t limited by T
D(pulse) jmax
P
Power Dissipation 150 W T =25C, T = 175 C Fig. 20
P
C J
D
-40 to
Operating Junction and Storage Temperature C
T , T
J stg
+175
Solder Temperature 260 C 1.6mm (0.063) from case for 10s
T
L
1 Nm
Mounting Torque M3 or 6-32 screw
M
d
8.8 lbf-in
Note (1): When using MOSFET Body Diode V = -4V/+19V
GSmax
Note (2): MOSFET can also safely operate at 0/+15 V
1 C3M0060065K Rev. B, 02-2020Electrical Characteristics (T = 25C unless otherwise specified)
C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V Drain-Source Breakdown Voltage 650 V V = 0 V, I = 100 A
(BR)DSS GS D
1.8 2.3 3.6 V = V , I = 5 mA
V DS GS D
VGS(th) Gate Threshold Voltage Fig. 11
1.9 V V = V , I = 5 mA, T = 175C
DS GS D J
I Zero Gate Voltage Drain Current 1 50 A V = 650 V, V = 0 V
DSS DS GS
I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V
GSS GS DS
42 60 79 V = 15 V, I = 13.2 A
GS D
Fig. 4,
R Drain-Source On-State Resistance m
DS(on)
5,6
80 VGS = 15 V, ID = 13.2 A, TJ = 175C
10 VDS= 20 V, IDS= 13.2 A
g Transconductance S Fig. 7
fs
9 V = 20 V, I = 13.2 A, T = 175C
DS DS J
C Input Capacitance 1020
iss
V = 0 V, V = 600 V
GS DS
Fig. 17,
Coss Output Capacitance 80 pF
f = 1 MHz
18
VAC = 25 mV
Crss Reverse Transfer Capacitance 9
C Effective Output Capacitance (Energy Related) 95
o(er)
pF V = 0 V, V = 0V to 400 V Note 3
GS DS
C Effective Output Capacitance (Time Related) 132
o(tr)
E C Stored Energy 15 J V = 600 V, 1 MHz Fig. 16
oss oss DS
V = 400 V, V = -4 V/15 V, I = 13.2 A,
DS GS
E Turn-On Switching Energy (Body Diode) 70 D
ON
R = 2.5, L= 135 H, T = 175C
J
J Fig. 25
G(ext)
E Turn Off Switching Energy (Body Diode) 5
OFF
FWD = Internal Body Diode of MOSFET
V = 400 V, V = -4 V/15 V, I = 13.2 A,
DS GS
E Turn-On Switching Energy (External SiC Diode) 67
ON D
R = 2.5, L= 135 H, T = 175C
J
J Fig. 25
G(ext)
E Turn Off Switching Energy (External SiC Diode) 6
OFF
FWD = External SiC Diode
t Turn-On Delay Time 8
d(on)
V = 400 V, V = -4 V/15 V
DD GS
t Rise Time 11
r
I = 13.2 A, R = 2.5 , L= 135 H
D G(ext)
ns Fig. 26
Timing relative to V
DS
td(off) Turn-Off Delay Time 17
Inductive load
tf Fall Time 5
,
R Internal Gate Resistance 3 f = 1 MHz V = 25 mV
G(int) AC
Q Gate to Source Charge 13
gs
V = 400 V, V = -4 V/15 V
DS GS
I = 13.2 A
Qgd Gate to Drain Charge 17 D
nC Fig. 12
Per IEC60747-8-4 pg 21
Q Total Gate Charge 46
g
Note (3): Co(er), a lumped capacitance that gives same stored energy as Coss while Vds is rising from 0 to 400V
o(tr)
C , a lumped capacitance that gives same charging time as Coss while Vds is rising from 0 to 400V
2 C3M0060065K Rev. B, 02-2020