V 1200 V
DS
I @ 25C 7.6 A
D
C3M0350120D
R 350 m
DS(on)
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
N-Channel Enhancement Mode
Features Package
TM
C3M SiC MOSFET technology
High blocking voltage with low On-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Benefits
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
Applications
Renewable energy
High voltage DC/DC converters
Switch Mode Power Supplies
UPS
Marking
Part Number Package
C3M0350120D TO-247-3 C3M0350120D
Maximum Ratings (T = 25 C unless otherwise specified)
C
Symbol Parameter Value Unit Test Conditions Note
V Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 A
DSmax
V Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1
GSmax
V Gate - Source Voltage (static) -4/+15 V Static Note: 2
GSop
7.6 Fig. 19
V = 15 V, T = 25C
GS C
Continuous Drain Current A
I
D
5.5
V = 15 V, T = 100C
GS C
Pulsed Drain Current 20 A Fig. 22
I Pulse width t limited by T
D(pulse)
jmax
P
Power Dissipation 50 W T =25C, T = 150 C Fig. 20
P
C J
D
-55 to
T , T Operating Junction and Storage Temperature C
J stg
+150
T Solder Temperature 260 C 1.6mm (0.063) from case for 10s
L
1 Nm
M Mounting Torque M3 or 6-32 screw
d
8.8 lbf-in
Note (1): When using MOSFET Body Diode V = -4V/+19V
GSmax
Note (2): MOSFET can also safely operate at 0/+15 V
C3M0350120D Rev. A, 03-2020
1Electrical Characteristics (T = 25C unless otherwise specified)
C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V Drain-Source Breakdown Voltage 1200 V V = 0 V, I = 100 A
(BR)DSS GS D
1.8 2.5 3.6 V V = V , I = 1 mA
DS GS D
V Gate Threshold Voltage Fig. 11
GS(th)
2.0 V VDS = VGS, ID = 1 mA, TJ = 150C
IDSS Zero Gate Voltage Drain Current 1 50 A VDS = 1200 V, VGS = 0 V
I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V
GSS GS DS
350 455 V = 15 V, I = 3.6 A
GS D
Fig. 4,
R Drain-Source On-State Resistance m
DS(on)
5, 6
525 V = 15 V, I = 3.6 A, T = 150C
GS D J
2.9 V = 20 V, I = 3.6 A
DS DS
g Transconductance S Fig. 7
fs
2.6 VDS= 20 V, IDS= 3.6 A, TJ = 150C
C Input Capacitance 345
iss
Fig. 17,
V = 0 V, V = 1000 V
GS DS
Coss Output Capacitance 20 pF
18
f = 1 MHz
Crss Reverse Transfer Capacitance 3.4
VAC = 25 mV
Eoss Coss Stored Energy 10.6 J Fig. 16
EON Turn-On Switching Energy (SiC Diode FWD) 128
V = 800 V, V = -4 V/15 V, I = 3.6 A,
DS GS Fig. 26,
D
J
29
R = 2.5 , L= 716 H, T = 150C
J
G(ext)
E Turn Off Switching Energy (SiC Diode FWD) 5
OFF
EON Turn-On Switching Energy (Body Diode FWD) 158
V = 800 V, V = -4 V/15 V, I = 3.6 A,
DS GS
Fig. 26,
D
J
29
R = 2.5 , L= 716 H, T = 150C
J
G(ext)
EOFF Turn Off Switching Energy (Body Diode FWD) 5
t Turn-On Delay Time 25
d(on)
VDD = 800 V, VGS = -4 V/15 V
t Rise Time 16
r
ID = 3.6 A, RG(ext) = 2.5 , Fig. 27,
ns
28
Timing relative to V
DS
td(off) Turn-Off Delay Time 14
Inductive load
t Fall Time 17
f
,
R Internal Gate Resistance 7 f = 1 MHz V = 25 mV
G(int) AC
Q Gate to Source Charge 5
gs
V = 800 V, V = -4 V/15 V
DS GS
I = 3.6 A
Q Gate to Drain Charge 9 nC D Fig. 12
gd
Per IEC60747-8-4 pg 21
Q Total Gate Charge 19
g
(T = 25C unless otherwise specified)
Reverse Diode Characteristics
C
Symbol Parameter Typ. Max. Unit Test Conditions Note
4.5 V V = -4 V, I = 1.8 A
GS SD
Fig. 8,
V Diode Forward Voltage
SD
9, 10
4.0 V V = -4 V, I = 1.8 A, T = 150 C
GS SD J
IS Continuous Diode Forward Current 9.4 A V = -4 V, T = 25 C Note 1
GS
J
I Diode pulse Current 20 A Note 1
S, pulse V = -4 V, pulse width t limited by T
jmax
GS P
t Reverse Recover time 26 ns
rr
V = -4 V, I = 3.6 A, V = 800 V
GS SD R
Note 1
Q Reverse Recovery Charge 67 nC
rr dif/dt = 850 A/s, T = 150 C
J
I Peak Reverse Recovery Current 4 A
rrm
Thermal Characteristics
Typ.
Symbol Parameter Unit Test Conditions Note
R Thermal Resistance from Junction to Case 2.5 C/W Fig. 21
JC
C3M0350120D Rev. A, 03-2020
2