C6D04065E
V = 650 V
RRM
Silicon Carbide Schottky Diode
I (T =155C) = 4 A
F C
Z -Rec Rectifier
Q = 16 nC
c
Features Package
th
New 6 Generation Technology
Low Forward Voltage Drop (V )
F
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
Low Leakage Current (I )
r
Temperature-Independent Switching Behavior
Positive Temperature Coefficient on V
F
TO-252-2
Benefits
Higher System Level Efficiency
Increase System Power Density PIN 1
Reduction of Heat Sink Requirements CASE
PIN 2
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies (SMPS)
Part Number Package Marking
Server/Telecom Power Supplies
Industrial Power Supplies
C6D04065E TO-252-2 C6D04065
Solar
UPS
Maximum Ratings (T = 25C unless otherwise specified)
C
Symbol Parameter Value Unit Test Conditions Note
V Repetitive Peak Reverse Voltage 650 V
RRM
V DC Blocking Voltage 650 V
DC
16 T =25C
C
I Continuous Forward Current 8 A T =125C Fig. 3
F C
4 T =155C
C
17 T =25C, t = 10 ms, Half Sine Wave
C P
I Repetitive Peak Forward Surge Current A
FRM
11 T =110C, t = 10 ms, Half Sine Wave
C P
29 T =25C, t = 10 ms, Half Sine Wave
C P
I Non-Repetitive Peak Forward Surge Current A Fig. 8
FSM
25 T =110C, t = 10 ms, Half Sine Wave
C P
261 T =25C, t = 10 s, Pulse
C P
I Non-Repetitive Peak Forward Surge Current A Fig. 8
F,Max
180 T =110C, t = 10 s, Pulse
C P
52 T =25C
C
P Power Dissipation Fig. 4
W
tot
22 T =110C
C
-55 to
T , T Operating Junction and Storage Temperature C
J stg
+175
1 C6D04065E Rev. A, 05-2020Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
1.27 1.50 I = 4 A T =25C
F J
V Forward Voltage V Fig. 1
F
1.37 1.60 I = 4 A T =175C
F J
2 20 V = 650 V T =25C
R J
I Reverse Current A Fig. 2
R
12 80 V = 650 V T =175C
R J
Q Total Capacitive Charge 16 nC V = 400 V, T = 25C Fig. 5
C R J
256 V = 0 V, T = 25C, f = 1 MHz
R J
C Total Capacitance 32 pF V = 200 V, T = 25C, f = 1 MHz Fig. 6
R J
27 V = 400 V, T = 25C, f = 1 MHz
R J
E Capacitance Stored Energy 2.6 J V = 400 V Fig. 7
C R
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit Note
R Thermal Resistance from Junction to Case 2.89 C/W Fig. 9
JC
Typical Performance
100
12
T = -55C
J
10
T = 25C
J
80
T = 75C
J
T = 125C
J
8
T = 175C
J
60
T = 175 C
J
6
T = 125 C
J
40
T = 75 C
J
4
T = 25 C
J
20
T = -55 C
2
J
0
0
0.5 1.0 1.5 2.0 2.5
0 100 200 300 400 500 600 700 800
Foward Voltage, V (V)
VV (V) (V) V (V)
F Reverse Voltage, V (V)
V (V)
R
FF R
R
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
2 C6D04065E Rev. A, 05-2020
Foward Current, I (A)
F
II (A) (A)
F
F
Reverse Leakage Current, I (uA)
RR
I ( mA)
R