CMPA601C025F
25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier
Description
The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC) on a silicon carbide (SiC) substrate, using a 0.25 m gate
length fabrication process. The semiconductor offers 25 Watts of
power from 6 to 12 GHz of instantaneous bandwidth. The GaN HEMT
MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm
metal/ceramic flanged package. It offers high gain and superior
PN: CMPA601C025F
efficiency in a small footprint package at 50 ohms.
Package Type: 440213
Typical Performance Over 6.0-12.0 GHz (T = 25C)
C
Parameter 6.0 GHz 7.5 GHz 9.0 GHz 10.5 GHz 12.0 GHz Units
Small Signal Gain 35 34 34 37 31 dB
P @ P = 22 dBm 34 51 49 45.9 36.5 W
OUT IN
Power Gain @ P = 22 dBm 23 25 25 25 23.5 dB
IN
PAE @ P = 22 dBm 21 36 35 33 27 %
IN
Note: All data CW
Features Applications
34 dB Small Signal Gain Jamming Amplifiers
40 W Typical P Test Equipment Amplifiers
SAT
Operation up to 28 V Broadband Amplifiers
High Breakdown Voltage
High Temperature Operation
Size 0.172 x 0.239 x 0.004 inches
Rev 4.1 April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.comCMPA601C025F 2
Absolute Maximum Ratings (not simultaneous) at 25C
Parameter Symbol Rating Units Conditions
Drain-source Voltage V 84 V 25C
DS DC
Gate-source Voltage V -10, +2 V 25C
GS DC
Storage Temperature T -40, +150 C
STG
Operating Junction Temperature T 225 C
J
Maximum Forward Gate Current I 23 mA 25C
GMAX
1
Soldering Temperature T 245 C
STG
Screw Torque T 40 in-oz
2
Thermal Resistance, Junction to Case R 0.85 C/W 85C @ P = 116 W
JC DISS
2
Case Operating Temperature T -40, +150 C
C
Notes:
1
Refer to the Application Note on soldering at wolfspeed.com/rf/document-library
2
See also, the Power Dissipation De-rating Curve on page 4
Electrical Characteristics (Frequency = 6.0 GHz to 12.0 GHz unless otherwise stated; T = 25C)
C
Characteristics Symbol Min. Typ. Max. Units Conditions
1,2
DC Characteristics
Gate Threshold V -3.8 -2.8 -2.3 V V = 10 V, I = 23 mA
TH DS D
Saturated Drain Current I 10.6 13.0 A V = 6 V, V = 2 V
DS DS GS
Drain-Source Breakdown Voltage V 84 100 V V = -8 V, I = 23 mA
BD GS DS
3
RF Characteristics
V = 28 V, I = 2 A, P = -30 dBm,
DD DQ IN
Small Signal Gain S21 28 31 dB
Frequency = 6.0 - 10.5 GHz
V = 28 V, I = 2 A, P = -30 dBm,
DD DQ IN
Small Signal Gain S21 25 28 dB
Frequency = 10.5 - 12 GHz
3,4
Output Power P 45.5 47.2 dBm V = 28 V, I = 2 A, P = 22 dBm, Freq = 6 GHz
OUT1 DD DQ IN
3,4
Output Power P 45.5 47.1 dBm V = 28 V, I = 2 A, P = 22 dBm, Freq = 9.5 GHz
OUT2 DD DQ IN
3,4
Output Power P 43.0 44.8 dBm V = 28 V, I = 2 A, P = 22 dBm, Freq = 12 GHz
OUT3 DD DQ IN
3,4
Power Added Efficiency PAE 23 33.2 % V = 28 V, I = 2 A, P = 22 dBm, Freq = 6 GHz
1 DD DQ IN
3,4
Power Added Efficiency PAE 26 32.3 % V = 28 V, I = 2 A, P = 22 dBm, Freq = 9.5 GHz
2 DD DQ IN
3,4
Power Added Efficiency PAE 15.5 26.5 % V = 28 V, I = 2 A, P = 22 dBm, Freq = 12 GHz
3 DD DQ IN
Input Return Loss S11 -5 dB V = 28 V, I = 2 A, P = -30 dBm
DD DQ IN
Output Return Loss S22 -5 dB V = 28 V, I = 2 A, P = -30 dBm
DD DQ IN
No damage at all phase angles,
Output Mismatch Stress VSWR 5:1 VSWR Y
V = 28 V, I = 2 A, P = 22 dBm
DD DQ IN
Notes:
1
Measured on-wafer prior to packaging
2
Scaled from PCM data
3
Measured in CMPA601C025F-AMP with 12.4 GHz low pass filter
4
Fixture loss de-embedded using the following offsets. The offset is subtracted from the input offset value and added to the output offset value.
a) 6.0 GHz - 0.13 dB
b) 9.50 GHz - 0.26 dB
c) 12.0 GHz - 0.35 dB
Rev 4.1 April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com