PN: CMPA901A035F
Package Type: 440213
CMPA901A035F
35 W, 9.0 - 11.0 GHz, GaN MMIC, Power Amplifier
The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon
carbide (SiC) substrate. The semiconductor offers 35 Watts of power from 9
to 11 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a
thermally-enhanced, 10-lead 25 mm x 9.9 mm metal/ceramic flanged package.
It offers high gain and superior efficiency in a small footprint package at 50
ohms.
Typical Performance Over 9.0-11.0 GHz (T = 25C)
C
Parameter 9.0 GHz 9.5 GHz 10.0 GHz 10.5 GHz 11.0 GHz Units
Small Signal Gain 35 34 34 37 31 dB
CW Performance 9.0 GHz 9.5 GHz 10.0 GHz 10.5 GHz 11.0 GHz Units
P @ P = 23 dBm 46 45 43 42 37 W
OUT IN
Power Gain @ P = 23 dBm 23.7 23.5 23.3 23.2 22.7 dB
IN
PAE @ P = 23 dBm 40 36 34 34 35 %
IN
Pulsed Performance (100 sec, 10%) 9.0 GHz 9.5 GHz 10.0 GHz 10.5 GHz 11.0 GHz Units
P @ P = 23 dBm 51 52 50 48 40 W
OUT IN
Power Gain @ P = 23 dBm 24.1 24.2 24.0 23.8 23.0 dB
IN
PAE @ P = 23 dBm 41.7 38.03 36.5 36.4 35.3 %
IN
Features Applications
Military Radar
9.0 - 11.0 GHz Operation
Marine Radar
Typical Output Power 40 W
Weather Radar
Typical Power Gain 23 dB
Medical Applications
Typical PAE 35%
Operation up to 28 V
Subject to change without notice.
1
www.cree.com/rf
Rev 0.0 May 2019-PRELIMINARYAbsolute Maximum Ratings (not simultaneous) at 25C
Parameter Symbol Rating Units Conditions
Drain-source Voltage V 84 V 25C
DS DC
Gate-source Voltage V -10, +2 V 25C
GS DC
Storage Temperature T -40, +150 C
STG
Operating Junction Temperature T 225 C
J
Maximum Forward Gate Current I 19 mA 25C
GMAX
1
Soldering Temperature T 245 C
STG
Screw Torque T 40 in-oz
Thermal Resistance, Junction to Case, CW R 1.3 C/W 85C @ P = 80 W
JC DISS
Thermal Resistance, Junction to Case, Pulsed R 0.93 C/W 85C @ P = 80 W
JC DISS
2
Case Operating Temperature T -40, +150 C
C
1
Note Refer to the Application Note on soldering at