About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRGP4750DPBF


IGBT Transistors 650V UltraFast IGBT TO-247
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USD 4.4239

Multiples of: 1

Single650 V1.7 V+/- 20 V70 A100 nA  TO - 247AC - 3TubeSiThrough Hole273 W- 40 C+ 175 CTrenchstop
IRG8P25N120KDPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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Infineon Availability : 0
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USD 4.4568

Multiples of: 104

Single1200 V1.7 V30 V40 A100 nA180 W TO - 247AC - 3TubeSiThrough Hole180 W- 40 C+ 150 C 
IRG7PH35UDPBF


IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A
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USD 4.5158

Multiples of: 1

Single1.2 kV2.2 V+/- 30 V50 A100 nA180 W TO - 247TubeSiThrough Hole180 W- 55 C+ 150 C 
IHW30N120R3FKSA1


IGBT Transistors IGBT PRODUCTS TrenchStop RC
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Infineon Availability : 0
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USD 4.5305

Multiples of: 1

Single1200 V1.55 V+/- 20 V60 A100 nA  TO - 247 - 3TubeSiThrough Hole349 W- 40 C+ 175 CIhw30n120
IRG4PC50UD-EPBF


IGBT Transistors 600V UltraFast 8-60kHz Copack IGBT
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USD 4.5567

Multiples of: 1

Single600 V2 V+/- 20 V55 A 200 W TO - 247TubeSiThrough Hole200 W- 55 C  
IHW40T120


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 1200V 40A
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Infineon Availability : 0
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USD 4.568

Multiples of: 1

Single1.2 kV2.3 V+/- 20 V    TO - 247 - 3TubeSiThrough Hole - 40 C+ 150 CIhw40t120
IRGP4066-EPBF


IGBT Transistors 600V Low VCEon Trench IGBT
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USD 4.603

Multiples of: 1

Single600 V2.1 V+/- 20 V140 A 454 W TO - 247ADTubeSiThrough Hole454 W- 55 C  
IMBG120R220M1HXTMA1


N-Channel 1.2kV 13A (Tc) 83W (Tc) Surface Mount PG-TO263-7-12
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USD 4.6115

Multiples of: 1

        TO - 263 - 8 , D²PAK (7 Leads + Tab) , TO - 263CATape And ReelSic (Silicon Carbide Junction Transistor)    Coolsic
SGW25N120FKSA1


IGBTs NPT 1200V 46A TO-247 (AC) RoHS
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USD 4.615

Multiples of: 1

                
IHW40N135R5XKSA1


IGBT Transistors TRENCHSTOP RC-H5 1200V IGBT
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Infineon Availability : 0
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USD 4.615

Multiples of: 1

Single1350 V1.65 V20 V80 A100 uA  TO - 247 - 3Tube Through Hole394 W- 40 C+ 175 CRc - H5
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