About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRGP4263-EPBF


International Rectifier IGBT Transistors IR IGBT 600V 650V 48A TO-247AD
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USD 3.4927

Multiples of: 1

         TubeSi     
IRGP4063DPBF


IGBT Transistors 600V UltraFast Trnch Appliance motion app
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USD 3.4974

Multiples of: 1

Single600 V2.14 V+/- 20 V96 A 330 W TO - 247TubeSiThrough Hole330 W- 55 C  
NGTG50N60FLWG


IGBT Transistors IGBT, PFC, High Frequency, 50 A, 600 V
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ON Semiconductor Availability : 0
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USD 3.4988

Multiples of: 121

         TubeSi    Ngtg50n60flwg
IRG7PH35UD-EP


IGBT Transistors IGBT DISCRETES
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USD 3.5137

Multiples of: 25

 1.2 kV2.2 V 50 A   TO - 247 - 3TubeSiThrough Hole180 W   
IRG4BC40FPBF


Transistor: IGBT; 600V; 49A; 160W; TO220AB
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USD 3.5177

Multiples of: 1

Single600 V1.7 V+/- 20 V49 A 160 W TO - 220 - 3TubeSiThrough Hole160 W- 55 C  
FGH60N60UFDTU


IGBT Transistors N-Ch/ 60A 600V FS
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USD 3.5318

Multiples of: 450

Single600 V +/- 20 V    TO - 247AB - 3TubeSiThrough Hole - 55 C+ 150 CFgh60n60
IHW30N120R3


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop RC
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USD 3.5379

Multiples of: 1

Single1200 V1.55 V+/- 20 V60 A100 nA  TO - 247 - 3TubeSiThrough Hole349 W- 40 C+ 175 CRc
IRG4PC40UD-EPBF


IGBT Transistors 600V UltraFast 8-60kHz
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USD 3.5396

Multiples of: 1

Single600 V2.1 V+/- 20 V40 A100 nA160 W TO - 247TubeSiThrough Hole160 W- 55 C+ 150 C 
IRGP4760PBF


Transistor: IGBT; 650V; 90A; 325W; TO247-3
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USD 3.5404

Multiples of: 123

      325 W         
IHW30N160R2


Transistor: IGBT; 1600V; 30A; 312W; TO247-3
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USD 3.5413

Multiples of: 1

      312 W         
STGFW40V60DF


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 0
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USD 3.5418

Multiples of: 1

Single600 V1.8 V20 V80 A250 nA  TO - 3PFTubeSiThrough Hole62.5 W- 55 C+ 175 C600 - 650V Igbts
IXYH50N65C3


IGBT Transistors 650V/130A XPT C3-Class TO-247
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IXYS Availability : 0
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USD 3.5523

Multiples of: 1

Single650 V1.74 V30 V130 A100 nA  TO - 247AD - 3TubeSiThrough Hole600 W- 55 C+ 175 CIxyh50n65
SGP07N120


IGBT Transistors FAST IGBT NPT TECH 1200V 8A
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USD 3.5714

Multiples of: 1

Single1200 V +/- 20 V    TO - 220 - 3TubeSiThrough Hole - 55 C+ 150 CSgp07n120
IRG7PH35UD1MPBF


Transistor: IGBT; 1200V; 50A; 179W; TO247-3
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USD 3.5751

Multiples of: 122

      179 W         
IXA12IF1200TC


IGBT Transistors XPT IGBT Copack
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IXYS Availability : 0
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USD 3.5959

Multiples of: 1

Single1200 V1.8 V20 V20 A500 nA  TO - 268 - AA - 4TubeSiSmd/Smt85 W- 55 C+ 150 CIxa12if1200
STGW20V60F


STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
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STMicroelectronics Availability : 0
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USD 3.6039

Multiples of: 1

Single600 V1.8 V20 V40 A250 nA  TO - 247 - 3TubeSiThrough Hole167 W- 55 C+ 175 C600 - 650V Igbts
FGH60T65SHD-F155


IGBTs Trench Field Stop 650V 120A TO-247-3 RoHS
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USD 3.6062

Multiples of: 1

                
IRG4PH40KDPBF


Transistor: IGBT; 1200V; 15A; 160W; TO247-3
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Infineon Availability : 0
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USD 3.6162

Multiples of: 4

      160 W         
FGH20N60SFDTU


IGBT Transistors 600V 20A Field Stop
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USD 3.6175

Multiples of: 1

Single600 V 20 V    TO - 247AB - 3TubeSiThrough Hole - 55 C+ 150 CFgh20n60sfd
IXYH40N65B3


Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
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USD 3.6202

Multiples of: 1

      300 W   Genx3, Planar, Xpt     
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