About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGW30NC60WD


IGBT Transistors PowerMESH" IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 5
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USD 3.0166
Multiples of: 1

Single600 V2.1 V+/- 20 V 100 nA200 W TO - 247 - 3TubeSiThrough Hole200 W- 55 C+ 150 CStgw30nc60wd
RGT00TS65DGC11


IGBT Transistors 650V 50A Trench IGBT Field Stop TO-247N
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ROHM Availability : 5
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USD 3.7021
Multiples of: 1

Single650 V1.65 V+/- 30 V85 A200 nA  TO - 247N - 3Tube Through Hole277 W- 40 C+ 175 C 
RGTV00TK65DGC11


IGBT Transistors 650V 50A TO-3PFM Field Stp Trnch IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 5
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USD 4.6684
Multiples of: 1

Single650 V1.5 V30 V45 A200 nA  TO - 3PFMTubeSiThrough Hole94 W- 40 C+ 175 C 
APT30N60BC6


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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Microchip Availability : 5
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USD 5.2555
Multiples of: 1

      219 W   Coolmos     
NGTB40N120FL2WG


IGBT Transistors 1200V/40A FAST IGBT FSII
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ON Semiconductor Availability : 5
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USD 5.2948
Multiples of: 1

Single1200 V2 V30 V80 A200 nA535 W TO - 247TubeSiThrough Hole535 W- 55 C+ 175 CNgtb40n120fl2
SGM35PA12A6BTFD


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Silan Availability : 5
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USD 26.6779
Multiples of: 1

                
LEGM200BH120L2K


- IGBTs ROHS
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Leading Energy Availability : 5
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USD 33.4409
Multiples of: 1

                
AOTF15B65M1


Transistor: IGBT; 650V; 15A; 14W; TO220F; Eoff: 0.2mJ; Eon: 0.29mJ
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Alpha & Omega Availability : 4
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USD 0.609
Multiples of: 1

  1.7 V   14 W         
SGF23N60UFTU


IGBT Transistors 600V/12A
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ON Semiconductor Availability : 4
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USD 1.3616
Multiples of: 1

Single600 V2.1 V+/- 20 V23 A+/- 100 nA75 W TO - 3PF - 3Tube Through Hole - 55 C+ 150 CSgf23n60
Hot IGW30N100TFKSA1


IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
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Infineon Availability : 4
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USD 1.4581
Multiples of: 1

Single1000 V1.8 V20 V60 A600 nA  TO - 247 - 3TubeSiThrough Hole412 W- 55 C+ 175 CTrenchstop Igbt
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