About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGX72N60A3H1


IGBT Transistors 75Amps 600V
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IXYS Availability : 0
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USD 9.3755

Multiples of: 1

 600 V1.35 V20 V75 A100 nA  PLUS 247 - 3TubeSiThrough Hole540 W- 55 C+ 150 CIxgx72n60
IXBH16N170A


IGBT Transistors 1700V 16A
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IXYS Availability : 0
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USD 9.387

Multiples of: 1

Single1700 V 20 V    TO - 247 - 3TubeSiThrough Hole150 W- 55 C+ 150 CIxbh16n170
IRG8P60N120KD-EPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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Infineon Availability : 0
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USD 9.4621

Multiples of: 1

Single1200 V1.7 V30 V100 A400 nA  TO - 247AD - 3TubeSiThrough Hole420 W- 40 C+ 150 C 
IXYH80N90C3


IGBT Transistors IGBT XPT-GENX3
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IXYS Availability : 0
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USD 9.5391

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        TO - 247AD - 3 SiThrough Hole   Planar
IXGR32N90B2D1


IGBT Transistors 47 Amps 900V 2.9 V Rds
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IXYS Availability : 0
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USD 9.5703

Multiples of: 1

Single900 V2.9 V20 V    Isoplus247 - 3TubeSiSmd/Smt - 55 C+ 150 C 
QP12W08S-37


SIP-13 Gate Drive ICs ROHS
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MORNSUN Availability : 0
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USD 9.5735

Multiples of: 1

                
APT102GA60L


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Single
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Microchip Availability : 0
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USD 9.575

Multiples of: 1

         TubeSi     
AIKQ120N60CTXKSA1


IGBT Transistors DISCRETES
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Infineon Availability : 0
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USD 9.7032

Multiples of: 1

         TubeSi    600V Trenchstop
APT100GT60B2RG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
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Microchip Availability : 0
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USD 9.7136

Multiples of: 1

          Si     
APT70GR65B2SCD30


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 0
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USD 9.7285

Multiples of: 1

         TubeSi     
IKQ120N60TAXKSA1


Transistor: IGBT; 600V; 120A; 833W; TO247-3
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Infineon Availability : 0
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USD 9.7922

Multiples of: 39

      833 W   Trenchstop     
IXYH82N120C3


IGBT Transistors XPT IGBT C3-Class 1200V/160A
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IXYS Availability : 0
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USD 9.8283

Multiples of: 1

Single1200 V2.75 V30 V160 A100 nA  TO - 247AD - 3TubeSiThrough Hole1040 W- 55 C+ 150 CIxyh82n120
STGY80H65DFB


IGBT Transistors Trench gte FieldStop IGBT 650V 80A
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STMicroelectronics Availability : 0
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USD 9.8383

Multiples of: 1

Single650 V1.9 V+/- 20 V120 A250 nA469 W MAX247 - 3TubeSiThrough Hole469 W- 55 C+ 175 CStgy80h65
IXGH40N120C3D1


IGBT Transistors 75Amps 1200V
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IXYS Availability : 0
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USD 9.8841

Multiples of: 1

 1.2 kV4.4 V20 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole380 W- 55 C+ 150 CIxgh40n120
APT64GA90B


IGBT Transistors FG, IGBT, 900V, TO-247
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Microchip Availability : 0
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USD 9.9463

Multiples of: 1

      500 W   POWER MOS 8®, PT     
IXYX140N90C3


IGBT Transistors IGBT XPT-GENX3
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IXYS Availability : 0
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USD 9.9521

Multiples of: 30

        TO - 247PLUS - 3 SiThrough Hole   Planar
APT70GR120B2


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 0
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USD 10.0225

Multiples of: 30

         TubeSi     
STGWT80V60DF


IGBT Transistors Trench gte FieldStop IGBT 600V 80A
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STMicroelectronics Availability : 0
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USD 10.0485

Multiples of: 1

Single600 V1.85 V+/- 20 V120 A250 nA469 W TO - 3PTubeSiThrough Hole469 W- 55 C+ 175 CStgwt80v60df
GT60J323(Q)


Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-3P(LH)
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Toshiba Availability : 0
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USD 10.0825

Multiples of: 1

Single   60 A         150 C 
ITF48IF1200HR


IGBT Transistors Disc IGBT XPT-GenX3 ISOPLUS247
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IXYS Availability : 0
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USD 10.0838

Multiples of: 1

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