About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXYN140N120A4


IGBT Transistors XPT thin-wafer technology 4th generation GenX4 Trench IGBT. Disc IGBT XPT-GenX4 SOT-227B miniBLOC
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IXYS Availability : 0
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USD 43.4752

Multiples of: 1

         Tube      
IXYN150N60B3


IGBT Transistors IGBT XPT-GENX3 (MINI
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IXYS Availability : 0
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USD 43.6929

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Single600 V1.77 V20 V250 A200 nA  SOT - 227B - 4 SiScrew Mount830 W- 55 C+ 175 C 
IXBX25N250


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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IXYS Availability : 0
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USD 44.0515

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Single2.5 kV3.3 V20 V55 A+/- 100 nA  TO - 247 - 3TubeSiThrough Hole300 W- 55 C+ 150 CVery High Voltage
IXYN50N170CV1


IGBT Transistors 1700V/120A High Volt
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IXYS Availability : 0
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USD 44.7697

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Single1700 V2.8 V20 V120 A100 nA  SOT - 227B - 4TubeSiSmd/Smt880 W- 55 C+ 175 C 
MG75HF12MIC1-A1-0000


IGBTs ROHS
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Yangjie Availability : 0
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USD 44.8962

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APT45GP120JDQ2


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip Availability : 0
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USD 45.142

Multiples of: 1

         TubeSi     
APT50GT120JRDQ2


IGBT Transistors IGBT NPT Medium Frequency Combi 1200 V 50 A ISOTOP
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Microchip Availability : 0
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USD 45.4162

Multiples of: 1

          NPT     
GD100HFX65C1S


IGBTs ROHS
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STARPOWER Availability : 0
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USD 45.549

Multiples of: 1

                
IXBH20N300


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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IXYS Availability : 0
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USD 45.769

Multiples of: 1

Single3 kV2.7 V+/- 20 V50 A+/- 100 nA  TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 150 C 
MMIX1X340N65B4


Discrete Semiconductor Modules DISC IGBT SMPD PKG-STANDARD
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IXYS Availability : 0
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USD 46.1404

Multiples of: 1

Single          Smd/Smt1200 W- 55 C+ 175 C 
VS-CPV364M4KPBF


IGBT Transistors 600 Volt 13 Amp
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Vishay Availability : 0
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USD 47.1057

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Hex600 V +/- 20 V    IMS - 2 - 13BulkSiThrough Hole - 55 C+ 150 C 
VS-CPV364M4FPBF


Vishay IGBT Transistors 600 Volt 15 Amp
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Vishay Availability : 0
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USD 47.1668

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Hex600 V +/- 20 V27 A   IMS - 2 - 13BulkSiThrough Hole - 40 C+ 150 C 
IXGH48N60C3C1


IGBT Transistors 75Amps 600V
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IXYS Availability : 0
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USD 47.7852

Multiples of: 30

        TO - 247AD - 3TubeSic    Ixgh48n60
IXYN82N120C3H1


IGBT Transistors XPT IGBT C3-Class 1200V/105A; Copack
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IXYS Availability : 0
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USD 48.5478

Multiples of: 1

Single1200 V2.75 V30 V105 A100 nA  SOT - 227B - 4TubeSiSmd/Smt500 W- 55 C+ 150 CIxyn82n120
FSAM10SH60A


IGBT Transistors 600V10A SPM2
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ON Semiconductor Availability : 0
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USD 49.0555

Multiples of: 48

 600 V2.5 V 10 A 43 W SPM32 - AATube Smd/Smt   Fsam10sh60
LEGM75BF120L5H


- IGBTs ROHS
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Leading Energy Availability : 0
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USD 49.6194

Multiples of: 1

                
MMIX1G320N60B3


Discrete Semiconductor Modules DISC IGBT SMPD PKG-STANDARD
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IXYS Availability : 0
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USD 49.6948

Multiples of: 1

Single          Smd/Smt1000 W- 55 C+ 150 C 
LEGM75BE120L5H


- IGBTs ROHS
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Leading Energy Availability : 0
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USD 50.1758

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LEGM300BH120L2K


- IGBTs ROHS
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Leading Energy Availability : 0
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USD 51.0695

Multiples of: 1

                
VS-CPV363M4UPBF


IGBT Transistors 600 Volt 6.8 Amp
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Vishay Availability : 0
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USD 51.9569

Multiples of: 1

Hex600 V 20 V    IMS - 2 - 13BulkSiThrough Hole - 40 C+ 150 C 
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