About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRG7PK35UD1PbF


IGBT Transistors 1400V Trench IGBT 25A, COPAK-247AC
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Infineon Availability : 0
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USD 2.8694

Multiples of: 25

        TO - 247AC - 3TubeSiThrough Hole    
IXGH28N60A3


IGBT Transistors Disc IGBT PT-Low Frequency TO-247AD
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IXYS Availability : 0
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USD 2.8742

Multiples of: 1

         Tube      
IRGS30B60KTRRP


IGBT Transistors 600V 30AD2PAK
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Infineon Availability : 0
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USD 2.875

Multiples of: 1

Single600 V1.95 V+/- 20 V78 A100 nA  D2PAKReelSiSmd/Smt370 W- 55 C+ 175 C 
SKW07N120FKSA1


Trans IGBT Chip N-CH 1.2KV 16.5A 3-Pin(3+Tab) TO-247
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Infineon Availability : 0
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USD 2.8809

Multiples of: 151

         Tube      
IRG8P08N120KD-EPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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Infineon Availability : 0
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USD 2.8848

Multiples of: 1

Single1200 V1.7 V30 V15 A100 nA  TO - 247AD - 3TubeSiThrough Hole89 W- 40 C+ 150 C 
FGA50N100BNTDTU


Transistor: IGBT; 1kV; 35A; 63W; TO3P
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ON Semiconductor Availability : 0
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USD 2.885

Multiples of: 1

      63 W         
NGTB50N65FL2WAG


IGBT Transistors 650V/50 FAST IGBT FSII TO
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ON Semiconductor Availability : 0
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USD 2.885

Multiples of: 1

         TubeSi     
FGA30S120P


IGBT Transistors Shorted AnodeTM IGBT
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ON Semiconductor Availability : 0
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USD 2.8942

Multiples of: 1

Single1300 V2.3 V25 V60 A500 nA  TO - 3PNTubeSiThrough Hole174 W- 55 C+ 175 CFga30s120p
IRGB4062DPBF


IGBT Transistors 600V UltraFast Trench IGBT
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Infineon Availability : 0
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USD 2.8942

Multiples of: 9

Single600 V1.95 V+/- 20 V48 A 250 W TO - 220 - 3Tube Through Hole - 55 C  
RGW80TS65DGC11


IGBT Transistors 650V 40A TO-247N Field Stp Trnch IGBT
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ROHM Availability : 0
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USD 2.8956

Multiples of: 1

Single650 V1.5 V30 V78 A200 nA  TO - 247N - 3TubeSiThrough Hole214 W- 40 C+ 175 C 
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