About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGH75T65SHD_F155


Fairchild Semiconductor IGBT Transistors
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 436
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USD 3.8731

Multiples of: 5

        TO - 247 - 3TubeSiThrough Hole   Fgh75t65shd
AFGHL40T65SPD


IGBT Transistors FS3 T TO247 40A 65
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ON Semiconductor Availability : 436
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USD 4.1391

Multiples of: 1

Single650 V1.85 V20 V80 A400 nA Aec - Q101TO - 247 - 3Tube Through Hole267 W- 55 C+ 175 C 
FGH75T65UPD


IGBT Transistors 650V 150A 187W
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ON Semiconductor Availability : 436
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USD 5.099

Multiples of: 1

Single650 V2.3 V20 V150 A400 nA187 W TO - 247TubeSiThrough Hole187 W- 55 C+ 175 CFgh75t65
FGH60N60SFDTU


IGBT Transistors N-Ch/ 60A 600V FS
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ON Semiconductor Availability : 436
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USD 7.8488

Multiples of: 1

Single600 V +/- 20 V    TO - 247AB - 3Tube Through Hole - 55 C+ 150 CFgh60n60
RGS50TSX2DHRC11


IGBT Transistors 1200V 25A Field Stop Trench IGBT. RGS50TSX2DHR is a highly reliable IGBT for the general inverter for automotive and industrial.
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ROHM Availability : 436
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USD 9.3353

Multiples of: 1

         Tube      
IGW40N60H3


Transistor: IGBT; 600V; 80A; 306W; TO247-3; Series: H3
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Infineon Availability : 435
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USD 2.178

Multiples of: 1

      306 W   Trenchstop 3    H3
IKW75N65SS5XKSA1


IGBT Trench Field Stop 650V 80A 395W Through Hole PG-TO247-3
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Infineon Availability : 435
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USD 7.733

Multiples of: 1

        TO - 247 - 3Tube     Trenchstop 5
RGTH50TK65GC11


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM Availability : 434
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USD 3.132

Multiples of: 1

Single650 V1.6 V30 V26 A200 nA  TO - 3PFMTubeSiThrough Hole59 W- 40 C+ 175 C 
RGW50TK65DGVC11


IGBT Transistors High-Speed Fast Switching Type, 650V 18A, TO-3PFM, Field Stop Trench IGBT
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ROHM Availability : 434
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USD 3.1763

Multiples of: 1

Single650 V1.9 V30 V30 A   TO - 3PFM - 3TubeSiThrough Hole67 W- 40 C+ 175 C 
RGTH50TK65DGC11


IGBT Trench Field Stop 650 V 26 A 59 W Through Hole TO-3PFM
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ROHM Availability : 434
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USD 3.492

Multiples of: 1

Single650 V1.6 V30 V26 A200 nA  TO - 3PFMTubeSiThrough Hole59 W- 40 C+ 175 C 
RGTH80TK65DGC11


IGBT Trench Field Stop 650 V 31 A 66 W Through Hole TO-3PFM
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ROHM Availability : 434
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USD 3.78

Multiples of: 1

Single650 V1.6 V30 V31 A200 nA  TO - 3PFMTubeSiThrough Hole66 W- 40 C+ 175 C 
FGY160T65SPD_F085


IGBT Transistors 650V Field Stop Gen3 Trench IGBT
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ON Semiconductor Availability : 434
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USD 10.281

Multiples of: 1

Single650 V1.6 V+/- 20 V240 A+/- 250 nA  TO - 247 - 3BulkSiThrough Hole882 W- 55 C+ 175 CFgy160t65s_F085
IGB10N60T


Infineon Technologies IGBT Transistors Low Loss IGBT Trench Stop&Fieldstop Tech
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Infineon Availability : 433
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USD 0.5412

Multiples of: 1

Single600 V2.05 V20 V20 A100 nA  PG - TO - 263 - 3ReelSiSmd/Smt110 W- 40 C+ 175 CIgb10n60
RGTH00TS65GC11


ROHM Semiconductor IGBT Transistors
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 433
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USD 2.5587

Multiples of: 1

 650 V1.6 V+/- 30 V85 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole277 W- 40 C+ 175 CRgth00ts65
RGTH60TK65DGC11


IGBT Trench Field Stop 650 V 28 A 61 W Through Hole TO-3PFM
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 433
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USD 3.684

Multiples of: 1

Single650 V1.6 V30 V28 A200 nA  TO - 3PFMTubeSiThrough Hole61 W- 40 C+ 175 C 
IKW50N60H3FKSA1


Transistor: IGBT; 600V; 30A; 94W; TO247-3; Series: H3
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Infineon Availability : 432
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USD 3.146

Multiples of: 1

      94 W   Trenchstop 3    H3
Hot RGS80TSX2HRC11


IGBT Transistors 1200V 40A FIELD STOP TRENCH
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ROHM Availability : 431
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USD 2.5067

Multiples of: 1

         Tube      
RGS00TS65HRC11


IGBT Transistors 650V 50A FIELD STOP TRENCH IGB
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ROHM Availability : 431
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USD 3.9903

Multiples of: 1

Single650 V1.65 V30 V88 A200 nA Aec - Q101TO - 247N - 3TubeSiThrough Hole326 W- 40 C+ 175 C 
STGWA40H65DFB


IGBT Transistors Trench gate field-stop IGBT HB series 650 V 40 A high speed
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STMicroelectronics Availability : 428
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USD 2.971

Multiples of: 1

Single650 V1.6 V20 V80 A+/- 250 nA  TO - 247 - 3 SiThrough Hole283 W- 55 C+ 175 CStgwa40h65dfb
IKW75N65EL5XKSA1


Infineon Technologies IGBT Transistors 650V IGBT Trenchstop 5
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Infineon Availability : 427
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USD 4.378

Multiples of: 1

Single650 V1.1 V20 V80 A100 nA  PG - TO 247 - 3TubeSiThrough Hole536 W- 40 C+ 175 CTrenchstop 5 L5
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