X-On Electronics has gained recognition as a prominent supplier of RGS50TSX2DHRC11 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGS50TSX2DHRC11 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGS50TSX2DHRC11 ROHM

RGS50TSX2DHRC11 electronic component of ROHM
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See Product Specifications
Part No.RGS50TSX2DHRC11
Manufacturer: ROHM
Category: IGBT Transistors
Description: IGBT Transistors 1200V 25A Field Stop Trench IGBT. RGS50TSX2DHR is a highly reliable IGBT for the general inverter for automotive and industrial.
Datasheet: RGS50TSX2DHRC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 11.2615 ea
Line Total: USD 11.26

Availability - 436
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 10.35
10 : USD 9.752
25 : USD 8.3835
100 : USD 7.728
250 : USD 7.5095
450 : USD 7.0035
900 : USD 6.4745

   
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We are delighted to provide the RGS50TSX2DHRC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGS50TSX2DHRC11 and other electronic components in the IGBT Transistors category and beyond.

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RGS50TSX2DHR 1200V 25A Field Stop Trench IGBT Datasheet lOutline TO-247N V 1200V CES I 25A C (100C) V 1.7V CE(sat) (Typ.) P 395W D (1) (2)(3) lInner Circuit (2) lFeatures (1) Gate (2) Collector 1) Low Collector - Emitter Saturation Voltage *1 (3) Emitter (1) 2) Short Circuit Withstand Time 10s *1 Built in FRD 3) Qualified to AEC-Q101 (3) 4) Built in Very Fast & Soft Recovery FRD lPackaging Specifications 5) Pb - free Lead Plating RoHS Compliant Packaging Tube lApplication Reel Size (mm) - General Inverter Tape Width (mm) - for Automotive and Industrial Use Type Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGS50TSX2D lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 1200 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 50 A C C Collector Current T = 100C I 25 A C C *1 Pulsed Collector Current I 75 A CP T = 25C I 50 A C F Diode Forward Current T = 100C I 25 A C F *1 Diode Pulsed Forward Current I 75 A FP T = 25C P 395 W C D Power Dissipation T = 100C P 197 W C D Operating Junction Temperature T -40 to +175 C j T Storage Temperature -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2020.09 - Rev.C 2020 ROHM Co., Ltd. All rights reserved. 1/11Datasheet RGS50TSX2DHR lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.38 C/W (j-c) Thermal Resistance Diode Junction - Case R - - 0.80 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 1200 - - V CES C GE Voltage V = 1200V, V = 0V CE GE I T = 25 Collector Cut - off Current - - 10 A CES j T = 175 - 2 - mA j Gate - Emitter Leakage I V = 30V, V = 0V - - 500 nA GES GE CE Current Gate - Emitter Threshold V V = 5V, I = 3.8mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 25A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.70 2.10 V CE(sat) j Voltage T = 175C - 2.20 - V j www.rohm.com 2020.09 - Rev.C 2020 ROHM Co., Ltd. All rights reserved. 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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