About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGY75N60SMD


Transistor: IGBT; 600V; 75A; 375W; TO247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 7.2254
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      375 W         
IXXH40N65B4D1


Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
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IXYS Availability : 0
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USD 7.266
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Single       TO - 247 - 3Tube Through Hole455 W- 55 C+ 175 C 
AIGW50N65F5XKSA1


IGBT Transistors DISCRETES
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Infineon Availability : 0
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USD 7.28
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Single650 V1.66 V30 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole270 W- 40 C+ 175 CTrenchstop 5 F5
IXDR35N60BD1


IXYS IGBT Transistors 35 Amps 600V
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IXYS Availability : 0
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USD 7.293
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Single600 V2.2 V+/- 20 V38 A500 nA  Isoplus247 - 3TubeSiThrough Hole125 W- 55 C+ 150 CIxdr35n60b
APT35GA90BD15


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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Microchip Availability : 0
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USD 7.3
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      290 W   POWER MOS 8®, PT     
RK3229


Other Processors and Microcontrollers (MCUs) BGA-316 RoHS
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Rockchip Availability : 0
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USD 7.3009
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IXGR60N60C2D1


IGBT Transistors 48 Amps 600V 2.7 V Rds
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IXYS Availability : 0
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USD 7.3125
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        Isoplus247 - 3Tube      
SGL160N60UFTU


IGBT Transistors 600V80A2.0V
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ON Semiconductor Availability : 0
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USD 7.3515
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Single600 V2.1 V+/- 20 V160 A+/- 100 nA250 W TO - 264 - 3Tube Through Hole - 55 C+ 150 CSgl160n60
IXYH40N120C3


IGBT Transistors GenX3 1200V XPT IGBT
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IXYS Availability : 0
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USD 7.3619
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Single1200 V3.6 V30 V70 A100 nA  TO - 247AD - 3TubeSiThrough Hole577 W- 55 C+ 175 CIxyh40n120
IXGH40N120C3


IGBT Transistors 75Amps 1200V
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IXYS Availability : 0
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USD 7.4153
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        TO - 247AD - 3TubeSi    Ixgh40n120
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