About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGH39N60BD1


IGBT Transistors 76 Amps 600V 1.8 Rds
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IXYS Availability : 0
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USD 8.0396

Multiples of: 1

Single600 V +/- 20 V    TO - 247AD - 3Tube Through Hole - 55 C+ 150 CIxgh39n60
AUIRGP50B60PD1E


International Rectifier IGBT Transistors 600V AUTO WARP2 150KHZ COPACK IGBT
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Infineon Availability : 0
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USD 8.06

Multiples of: 1

Single600 V2.35 V+/- 20 V75 A  Aec - Q101TO - 247 - 3TubeSiThrough Hole390 W- 55 C  
IXGX120N60B3


IGBT Transistors 120Amps 600V
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IXYS Availability : 0
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USD 8.0874

Multiples of: 1

Single600 V1.5 V20 V280 A100 nA  PLUS 247 - 3TubeSiThrough Hole780 W- 55 C+ 150 CIxgx120n60
RJP5001APP-M0#T2


Trans IGBT Chip N-CH 500V 3-Pin(3+Tab) TO-220FL Tube
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Renesas Availability : 0
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USD 8.1319

Multiples of: 1

Single        Rail/Tube    150 C 
IXYH50N120C3


IGBT Transistors XPT IGBT C3-Class 1200V/105A
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IXYS Availability : 0
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USD 8.1606

Multiples of: 1

Single1200 V2.5 V30 V105 A100 nA  TO - 247AD - 3TubeSiThrough Hole625 W- 55 C+ 150 CIxyh50n120
IXGH30N120B3D1


IGBT Transistors 60 Amps 1200V
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IXYS Availability : 0
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USD 8.1606

Multiples of: 1

 1.2 kV2.96 V20 V50 A100 nA  TO - 247AD - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxgh30n120
AUIRGP4066D1-E


International Rectifier IGBT Transistors 600V co-pack Auto Trench IGBT
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Infineon Availability : 0
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USD 8.2208

Multiples of: 1

 600 V2.1 V20 V140 A100 nA Aec - Q101TO - 247 - 3TubeSiThrough Hole454 W   
APT25GR120BD15


IGBT Transistors FG, IGBT-COMBI, 1200V, 25A, TO247
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Microchip Availability : 0
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USD 8.232

Multiples of: 1

      521 W   NPT, POWER MOS 8®     
IRG4PSC71UDPBF


Transistor: IGBT; 600V; 85A; 350W; SUPER247
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Infineon Availability : 0
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USD 8.2432

Multiples of: 1

Single600 V2 V+/- 20 V85 A 350 W TO - 274AATubeSiThrough Hole350 W- 55 C  
IRG7PH50K10DPBF


IGBT Transistors 1200V UltraFast Discrete IGBT
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Infineon Availability : 0
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USD 8.2849

Multiples of: 56

Single1200 V2.4 V+/- 30 V90 A100 nA400 W TO - 247AC - 3TubeSiThrough Hole400 W- 40 C+ 150 C 
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