About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXDR30N120D1


IGBT Transistors 30 Amps 1200V
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IXYS Availability : 0
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USD 8.67

Multiples of: 1

Single1.2 kV2.4 V+/- 20 V50 A500 nA  Isoplus247 - 3TubeSiThrough Hole200 W- 55 C+ 150 CIxdr30n120
IXYH10N170CV1


IGBT Transistors 1700V/10A XPT IGBT w/ Diode
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IXYS Availability : 0
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USD 8.6975

Multiples of: 1

Single1700 V4.1 V20 V36 A100 nA  TO - 247AD - 3TubeSiThrough Hole280 W- 55 C+ 175 C 
IKW75N60TA


Infineon Technologies IGBT Transistors 600V 75A 100nA
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Infineon Availability : 0
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USD 8.7307

Multiples of: 1

Single600 V1.95 V20 V75 A100 nA  TO - 247TubeSiThrough Hole428 W- 40 C+ 150 CIkw75n60
FGY60T120SQDN


Trans IGBT Chip N-CH 1200V 120A 3-Pin TO-247 Tube
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ON Semiconductor Availability : 0
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USD 8.7865

Multiples of: 1

Single1200 V1.7 V25 V120 A200 nA  TO - 247 - 3TubeSiThrough Hole517 W- 55 C+ 175 C 
IXGH40N120A2


IGBT Transistors SGL IGBT 1200V, 80A
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IXYS Availability : 0
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USD 8.8258

Multiples of: 1

Single1.2 kV2 V20 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole360 W- 55 C+ 150 CIxgh40n120
IXYH40N120B3


IGBT Transistors IGBT XPT-GENX3
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IXYS Availability : 0
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USD 8.8616

Multiples of: 1

        TO - 247AD - 3TubeSiThrough Hole    
IXYH30N120C3D1


IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
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IXYS Availability : 0
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USD 8.8685

Multiples of: 1

Single1200 V3.7 V30 V66 A100 nA  TO - 247AD - 3TubeSiThrough Hole416 W- 55 C+ 150 CIxyh30n120
IXYH40N120B3D1


IGBT Transistors IGBT XPT-GENX3
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IXYS Availability : 0
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USD 8.8751

Multiples of: 1

        TO - 247AD - 3TubeSiThrough Hole   Planar
IXDH30N120D1


IGBT Transistors 30 Amps 1200V
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IXYS Availability : 0
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USD 8.905

Multiples of: 1

Single1.2 kV2.4 V+/- 20 V60 A500 nA  TO - 247 - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxdh30n120
IXXH80N65B4D1


Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
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IXYS Availability : 0
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USD 8.937

Multiples of: 1

Single       TO - 247 - 3Tube Through Hole625 W- 55 C+ 175 C 
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