About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXYR100N120C3


IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs
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IXYS Availability : 0
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USD 22.1089

Multiples of: 1

Single1200 V2.9 V30 V104 A100 nA  TO - 247 - 3TubeSiThrough Hole484 W- 55 C+ 175 CIxyr100n120
IKQ50N120CH3


TO-247-3 IGBTs ROHS
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Infineon Availability : 0
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USD 22.1534

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IXGN200N60B3


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 200A
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IXYS Availability : 0
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USD 22.238

Multiples of: 1

Single600 V1.35 V+/- 20 V300 A100 nA  SOT - 227B - 4TubeSiSmd/Smt830 W- 55 C+ 150 CIxgn200n60
KWFFP15R12NS3


IGBTs L5 RoHS
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JUNSHINE Availability : 0
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USD 22.3744

Multiples of: 1

                
IXYH16N250CV1HV


Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
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IXYS Availability : 0
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USD 22.4383

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Single       TO - 247HV - 3Tube Through Hole500 W- 55 C+ 175 C 
IXGH24N170AH1


IXYS IGBT Transistors High Voltage IGBT w Diode
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IXYS Availability : 0
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USD 22.4383

Multiples of: 1

Single1.7 kV +/- 20 V24 A   TO - 247TubeSiThrough Hole - 55 C+ 150 CIxgh24n170
IXGR60N60C3C1


IGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A
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IXYS Availability : 0
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USD 22.5995

Multiples of: 1

 600 V2.2 V+/- 20 V75 A100 nA  ISOPLUS 247 - 3TubeSicThrough Hole170 W- 55 C+ 150 CIxgr60n60
IXGX32N170H1


IXYS IGBT Transistors 32 Amps 1700V 2.5 Rds
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IXYS Availability : 0
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USD 22.7161

Multiples of: 1

Single1.7 kV2.5 V+/- 20 V75 A100 nA  PLUS 247 - 3TubeSiThrough Hole350 W- 55 C+ 150 CIxgx32n170
IXYN100N120C3


IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
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IXYS Availability : 0
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USD 22.7503

Multiples of: 7

Single1200 V2.9 V30 V152 A100 nA  SOT - 227B - 4TubeSiSmd/Smt830 W- 55 C+ 175 CIxyn100n120
APT35GP120B2D2G


IGBT Transistors IGBT PT MOS 7 Combi 1200 V 35 A TO-247 MAX
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Microchip Availability : 0
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USD 22.82

Multiples of: 1

      543 W   POWER MOS 7®, PT     
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