About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGWA75M65DF2


IGBT Transistors PTD HIGH VOLTAGE
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STMicroelectronics Availability : 58
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USD 6.2147

Multiples of: 1

Single650 V1.65 V20 V120 A+/- 250 uA  TO - 247 - 3 SiThrough Hole488 W- 55 C+ 175 CStgwa75m65df2
STGW25H120DF2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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STMicroelectronics Availability : 58
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USD 7.1452

Multiples of: 1

Single1200 V2.1 V20 V50 A250 nA375 W TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 CStgw25h120df2
APT40GR120B2D30


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 58
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USD 8.69

Multiples of: 1

Single1.2 kV2.5 V30 V88 A250 nA  TO - 247 - 3TubeSiThrough Hole500 W- 55 C+ 150 C 
APT35GN120L2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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Microchip Availability : 58
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USD 9.658

Multiples of: 1

Single1.2 kV1.7 V30 V94 A600 nA  TO - 264 - 3TubeSiThrough Hole379 W- 55 C+ 150 C 
BGH75N120HF1


Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
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BASiC Semiconductor Availability : 58
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USD 9.7563

Multiples of: 1

      568 W   Trench, Field Stop, SiC SBD     
BGH50N65HF1


Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
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BASiC Semiconductor Availability : 58
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USD 10.864

Multiples of: 1

      357 W   Trench, Field Stop, SiC SBD     
IXBH42N170A


IGBT Transistors BIMOSET 42A 1700V
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IXYS Availability : 58
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USD 27.3815

Multiples of: 1

Single1700 V5.2 V20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxbh42n170
STGP30M65DF2


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 57
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USD 2.156

Multiples of: 1

         TubeSi    600 - 650V Igbts
FGHL40T65MQDT


IGBT Transistors FS4 MID SPEED IGBT 650V 40A TO247-3L WITH FULL RATED CURRENT DIODE
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ON Semiconductor Availability : 56
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USD 3.0531

Multiples of: 1

                
IXYH8N250CHV


Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
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IXYS Availability : 56
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USD 25.116

Multiples of: 1

Single       TO - 247HV - 3Tube Through Hole280 W- 55 C+ 175 C 
IGP50N60TXKSA1


Trans IGBT Chip N-CH 600V 90A 3-Pin(3+Tab) TO-220AB
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Infineon Availability : 55
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USD 2.035

Multiples of: 1

Single600 V1.5 V+/- 20 V90 A100 nA  TO - 220 - 3TubeSiThrough Hole333 W- 40 C+ 175 CTrenchstop Igbt
IGW40N65H5


IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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Infineon Availability : 55
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USD 2.205

Multiples of: 1

Single650 V1.65 V+/- 20 V74 A100 nA  TO - 247 - 3TubeSiThrough Hole250 W- 40 C+ 175 CTrenchstop 5 H5
IHW30N65R5


IGBT Transistors HOME APPLIANCES 14
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Infineon Availability : 55
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USD 2.2293

Multiples of: 1

                
IHW30N120R5XKSA1


IGBT Transistors TRENCHSTOP RC-H5 1350V IGBT
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Infineon Availability : 55
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USD 2.9174

Multiples of: 1

Single1200 V1.55 V20 V60 A100 uA  TO - 247 - 3Tube Through Hole330 W- 40 C+ 175 CRc - H5
IHW30N110R3FKSA1


Transistor: IGBT; 1.1kV; 30A; 166W; TO247-3
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Infineon Availability : 55
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USD 3.3098

Multiples of: 1

      166 W   Trenchstop     
HGTP12N60C3D


Transistor: IGBT; 600V; 12A; 167W; TO220
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ON Semiconductor Availability : 54
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USD 0.5867

Multiples of: 1

      167 W         
STGW50H60DF


STMicroelectronics IGBT Transistors 50A 600V FST IGBT Ultrafast Diode
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STMicroelectronics Availability : 54
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USD 1.9021

Multiples of: 1

  1.8 V+/- 20 V100 A250 nA360 W TO - 247TubeSiThrough Hole360 W- 55 C+ 150 CStgw50h60df
APT35GA90B


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Single
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Microchip Availability : 54
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USD 4.752

Multiples of: 1

         TubeSi     
APT60GT60BRG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
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Microchip Availability : 54
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USD 9.0216

Multiples of: 1

Single        TubeSi     
IXXH75N60C3D1


750W 150A 600V TO-247AD IGBTs ROHS
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IXYS Availability : 0
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USD 5.6347

Multiples of: 1

         TubeSi     
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