TYPICAL PERFORMANCE CURVES APT35GN120L2DQ2(G) 1200V APT35GN120L2DQ2 APT35GN120L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design TO-264 Max results in superior V performance. Easy paralleling results from very tight CE(on) parameter distribution and slightly positive V temperature coefcient. Built-in CE(on) gate resistance ensures ultra-reliable operation. Low gate charge simplies gate drive design and minimizes losses. G C E 1200V NPT Field Stop Trench Gate: Low V CE(on) Easy Paralleling C 10s Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specied. C Parameter Symbol APT35GN120L2DQ2(G) UNIT V Collector-Emitter Voltage 1200 CES Volts V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 94 C1 C I Continuous Collector Current T = 110C 46 Amps C2 C 1 Pulsed Collector Current T = 150C I 105 C CM Switching Safe Operating Area T = 150C 105A 1200V SSOA J P Total Power Dissipation 379 Watts D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V 1200 Collector-Emitter Breakdown Voltage (V = 0V, I = 250A) (BR)CES GE C V 5 5.8 6.5 Gate Threshold Voltage (V = V , I = 1mA, T = 25C) GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 35A, T = 25C) 1.4 1.7 2.1 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 35A, T = 125C) 1.9 GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 200 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) TBD CE GE j I Gate-Emitter Leakage Current (V = 20V) 600 nA GES GE R Intergrated Gate Resistor 6 GINT CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT35GN120L2DQ2(G) DYNAMIC CHARACTERISTICS Characteristic Test Conditions MIN TYP MAX UNIT Symbol C Input Capacitance Capacitance 2500 ies C Output Capacitance 150 pF V = 0V, V = 25V oes GE CE f = 1 MHz C Reverse Transfer Capacitance 120 res V Gate-to-Emitter Plateau Voltage Gate Charge 9.5 V GEP 3 V = 15V Q 220 Total Gate Charge GE g V = 600V Q Gate-Emitter Charge 15 nC CE ge I = 35A Q C 130 Gate-Collector Mille) Charge gc 7 T = 150C, R = 2.2 , V = J G GE Switching Safe Operating Area SSOA 105 A 15V, L = 100H,V = 1200V CE Short Circuit Safe Operating Area V = 960V, V = 15V, SCSOA CC GE s 10 7 T = 125C, R = 2.2 J G t Inductive Switching (25C) Turn-on Delay Time 24 d(on) t V = 800V Current Rise Time 22 r CC ns t V = 15V 300 Turn-off Delay Time d(off) GE I = 35A t Current Fall Time 55 C f 7 R = 2.2 4 E G Turn-on Switching Energy TBD on1 T = +25C 5 J E Turn-on Switching Energy (Diode) 2395 J on2 6 E 2315 Turn-off Switching Energy off t Turn-on Delay Time Inductive Switching (125C) 24 d(on) t Current Rise Time V = 800V 22 r CC ns t V = 15V Turn-off Delay Time 365 d(off) GE I = 35A t Current Fall Time C 100 f 7 R = 2.2 4 4 E G TBD Turn-on Switching Energy on1 T = +125C 55 J E Turn-on Switching Energy (Diode) 3745 J on2 66 E Turn-off Switching Energy 3435 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .33 JC C/W R Junction to Case (DIODE) .61 JC W Package Weight gm 5.9 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. (See Figure 24.) 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 R is external gate resistance, not including R nor gate driver impedance. (MIC4452) G Gint APT Reserves the right to change, without notice, the specications and information contained herein. 050-7604 Rev B 10-2005