About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGH48N60B3D1


IGBT Transistors 75 Amps 600V 1.05 V Rds
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IXYS Availability : 78
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USD 7.267

Multiples of: 1

Single600 V1.8 V20 V 100 nA  TO - 247AD - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxgh48n60
APT54GA60B


IGBT Transistors FG, IGBT, 600V, TO-247
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Microchip Availability : 78
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USD 7.75

Multiples of: 1

      416 W   POWER MOS 8®, PT     
FGD3040G2-F085C


IGBT Transistors ECOSPARK2 IGN-IGBT TO252
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ON Semiconductor Availability : 77
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USD 1.35

Multiples of: 1

                
IKP15N65H5


IGBT Transistors INDUSTRY 14
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Infineon Availability : 77
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USD 1.4625

Multiples of: 1

                
IKW40N65ES5XKSA1


IGBT Transistors TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 77
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USD 2.6335

Multiples of: 1

Single650 V1.35 V20 V79 A100 nA  TO - 247 - 3TubeSiThrough Hole230 W- 40 C+ 175 CTrenchstop 5 S5
STGW40V60F


IGBT Transistors 600V 40A Trench Gate 1.8V Vce IGBT
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STMicroelectronics Availability : 77
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USD 3.7321

Multiples of: 1

Single600 V2.35 V+/- 20 V80 A 283 W TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 CStgw40v60f
AUIRG4PH50S


International Rectifier IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT
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Infineon Availability : 77
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USD 6.7943

Multiples of: 1

Single1.2 kV1.7 V+/- 20 V57 A  Aec - Q101TO - 247 - 3TubeSiThrough Hole200 W- 55 C  
NGTB30N120FL2WG


IGBT Transistors 1200V/30A FAST IGBT FSII
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ON Semiconductor Availability : 76
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USD 4.9105

Multiples of: 1

Single1200 V2 V30 V60 A200 nA452 W TO - 247TubeSiThrough Hole452 W- 55 C+ 175 CNgtb30n120fl2
APT50GF120LRG


IGBT Modules Insulated Gate Bipolar Transistor - NPT Low Frequency - Single
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Microchip Availability : 76
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USD 23.025

Multiples of: 1

Single1.2 kV2.5 V+/- 30 V135 A+/- 100 nA  TO - 264 - 3Tube Through Hole781 W- 55 C+ 150 C 
APT54GA60BD30


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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Microchip Availability : 75
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USD 9.35

Multiples of: 1

Single600 V2 V+/- 30 V96 A+/- 100 nA  TO - 247 - 3BulkSiThrough Hole416 W- 55 C+ 150 C 
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