About MOSFET

Genesic Semiconductor MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Pd - Power Dissipation
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
G3R350MT12D


SiC MOSFETs 1200V 350mohm TO-247-3 G3R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor Availability : 4048
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USD 3.5535
Multiples of: 1

10 A1.2 kV350 mOhmsN - Channel 2.7 V- 55 C+ 175 C63 WThrough HoleTO - 247 - 3  1 Channel- 5 V , + 15 V10 nCEnhancement  
G2R1000MT17J


N-Channel 1700V 3A (Tc) 54W (Tc) Surface Mount TO-263-7
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor Availability : 3943
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USD 5.014
Multiples of: 1

5 A1.7 kV1 OhmsN - Channel 4.5 V- 55 C+ 175 C44 WSMD/SMTTO - 263 - 7TubeSiC1 Channel- 5 V , + 20 V11 nCEnhancement  
G3R160MT12D


SiC MOSFETs 1200V 160mohm TO-247-3 G3R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor Availability : 2848
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USD 5.0945
Multiples of: 1

19 A1.2 kV160 mOhmsN - Channel 2.7 V- 55 C+ 175 C106 WThrough HoleTO - 247 - 3  1 Channel- 5 V , + 15 V23 nCEnhancement  
G2R1000MT17D


SiC MOSFETs 1700V 1000mohm TO-247-3 G2R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor Availability : 2683
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USD 4.1285
Multiples of: 1

5 A1.7 kV1 OhmsN - Channel 4.5 V- 55 C+ 175 C44 WThrough HoleTO - 247 - 3  1 Channel- 5 V , + 20 V11 nCEnhancement  
G3R160MT17D


SiC MOSFETs 1700V 160mohm TO-247-3 G3R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor Availability : 2031
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USD 10.189
Multiples of: 1

17 A1.7 kV160 mOhmsN - Channel 2.7 V- 55 C+ 175 C138 WThrough HoleTO - 247 - 3  1 Channel- 5 V , + 15 V29 nCEnhancement  
G3R75MT12D


SiC MOSFETs 1200V 75mohm TO-247-3 G3R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor Availability : 1730
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USD 8.648
Multiples of: 1

36 A1.2 kV75 mOhmsN - Channel 2.7 V- 55 C+ 175 C182 WThrough HoleTO - 247 - 3  1 Channel- 5 V , + 15 V47 nCEnhancement  
G3R75MT12K


SiC MOSFETs 1200V 75mohm TO-247-4 G3R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor Availability : 1728
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USD 8.855
Multiples of: 1

31 A1.2 kV75 mOhmsN - Channel 2.7 V- 55 C+ 175 C137 WThrough HoleTO - 247 - 4  1 Channel- 5 V , + 15 V47 nCEnhancement  
G3R350MT12J


MOSFET 1200V 350mO TO-263-7 G3R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor Availability : 1724
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USD 4.784
Multiples of: 1

            SiC, G3R      
G3R40MT12D


SiC MOSFETs 1200V 40mohm TO-247-3 G3R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor Availability : 1651
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USD 14.9615
Multiples of: 1

63 A1.2 kV40 mOhmsN - Channel 2.7 V- 55 C+ 175 C297 WThrough HoleTO - 247 - 3  1 Channel- 5 V , + 15 V88 nCEnhancement  
G3R60MT07D


SiC MOSFETs 750V 60mohm TO-247-3 G3R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor Availability : 1627
Ship by Mon. 05 Aug to Wed. 07 Aug Calender.png

USD 10.05
Multiples of: 1

43 A750 V60 mOhmsN - Channel 2.5 V- 55 C+ 175 C171 WThrough HoleTO - 247 - 3  1 Channel- 5 V , + 15 V47 nCEnhancement  
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