About MOSFETs

On Semiconductor MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTMFS4935NBT1G


MOSFET N-CH 30V 13A SO8FL
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USD 0.5144

Multiples of: 844

                   
NDD03N80ZT4G


MOSFET Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK
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USD 0.5144

Multiples of: 844

2.9 A800 V3.7 Ohmsn - channel 4.1 V- 55 C+ 150 C96 Wsmd/smtDPAK - 3Reelsi1 channel30 V17 nC   
ATP206-TL-H


Trans MOSFET N-CH 40V 40A 3-Pin(2+Tab) ATPAK T/R
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USD 0.5144

Multiples of: 844

           Tape And Reel    enhancement  
HUF76609D3


Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) IPAK Rail
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USD 0.5144

Multiples of: 844

           Rail/Tube    enhancement  
HUF76629D3ST_F085


Fairchild Semiconductor MOSFET
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USD 0.5152

Multiples of: 2500

20 A100 V41 mOhmsn - channel 1.6 V- 55 C+ 175 C150 Wsmd/smtDPAK - 3Reelsi1 channel16 V39 nC   
FDD3682_F085


Fairchild Semiconductor MOSFET N-Channel PwrTrench
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USD 0.5171

Multiples of: 14

5.5 A100 V36 mOhmsn - channel20 V - 55 C+ 175 C95 Wsmd/smtDPAK - 3Reelsi1 channel20 V enhancement powertrench
FDMA3027PZ


MOSFET -30V Dual P-Channel PowerTrench MOSFET
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USD 0.5171

Multiples of: 1

3.3 A30 V87 mOhmsp - channel  - 55 C+ 150 C1.4 Wsmd/smtMICRO - FET 2 x 2Reelsi2 channel25 V enhancement powertrench
NVMFS5C460NLWFAFT1G


MOSFET T6 40V NCH LL IN SO8FL
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USD 0.5171

Multiples of: 1

           Cut Tape       
FQU4N50TU_WS


Fairchild Semiconductor MOSFET N-CH500V 2.6A2.7OHM
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USD 0.5175

Multiples of: 1

2.6 A500 V2.7 Ohmsn - channel  - 55 C+ 150 C2.5 Wthrough holeIPAK - 3Tubesi1 channel30 V enhancement qfet
NVMFS5C645NLT1G


MOSFET T6 60V SO8FL
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USD 0.5178

Multiples of: 1500

         Smd/SmtSO - FL - 8Cut TapeSi    Aec - Q101 
NVMFS6H852NLWFT1G


MOSFET T8 80V LL SO8FL
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USD 0.5181

Multiples of: 1

42 A80 V13.1 mOhmsN - Channel 2 V- 55 C+ 175 C54 WSMD/SMTDFN - 5Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V17 nCEnhancementAEC - Q101 
NVMFS5C430NWFT1G


MOSFET T6-D3F 40V NFET
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USD 0.5186

Multiples of: 1

185 A40 V1.4 mOhmsn - channel 2.5 V- 55 C+ 175 C106 Wsmd/smtDFN - 5Cut Tapesi1 channel20 V47 nCenhancementaec - q101 
FDMS86569_F085


MOSFET 60V 65A N-Channel Power Trench MOSFET
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USD 0.519

Multiples of: 1

65 A60 V8.3 mOhmsn - channel 2 V- 55 C+ 175 C100 Wsmd/smtPOWER56 - 8Reelsi1 channel+/- 20 V54 nCenhancement powertrench
NVTFS4C10NTAG


MOSFET NFET U8FL 30V 44A 7.4MOHM
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USD 0.5197

Multiples of: 1

47 A30 V7.4 mOhmsn - channel     smd/smtWDFN - 8Reelsi      
FDD850N10LD


Fairchild Semiconductor MOSFET 100V, 15.7A, 75mOhm N-Channel BoostPak
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USD 0.5197

Multiples of: 746

15.7 A100 V75 mOhmsn - channel  - 55 C+ 150 C42 Wsmd/smtDPAK - 3Reelsi1 channel20 V22.2 nCenhancement powertrench
FDMS9411-F085


MOSFET 40/20V 740A N-Ch Power Trench MOSFET
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USD 0.5212

Multiples of: 1

30 A40 V14 mOhmsN - Channel 2 V- 55 C+ 175 C68.2 WSmd/SmtPOWER - 56 - 8Cut TapeSi1 Channel20 V14.7 nCEnhancement Powertrench
FQD2N100TM


Transistor: N-MOSFET; unipolar; 1000V; 1A; 50W; DPAK
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USD 0.5218

Multiples of: 1

   N Channel               
NCV8440ASTT1G


MOSFET 2.6A, 52V N-CH, CLAM
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USD 0.5232

Multiples of: 1000

  110 mOhmsn - channel  - 55 C+ 150 C1.69 Wsmd/smtSOT - 223Reelsi    aec - q100 
NVMFS6B85NLT1G


MOSFET 100V 30 MOHM T5 SINGLE S0
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USD 0.5236

Multiples of: 1

         Smd/SmtSO - FL - 8Cut TapeSi    Aec - Q101 
FQB30N06LTM


N-Channel 60 V 32A (Tc) 3.75W (Ta), 79W (Tc) Surface Mount D²PAK (TO-263)
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USD 0.5239

Multiples of: 800

32 A60 V35 mOhmsn - channel  - 55 C+ 175 C3.75 Wsmd/smtTO - 263Reelsi1 channel20 V enhancement  
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