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On Semiconductor MOSFETs

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTTFS4H05NTAG


MOSFET NFET U8FL 25V 94A 3.3MOHM
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USD 0.7706

Multiples of: 564

         Smd/SmtWDFN - 8Cut TapeSi      
NVD6820NLT4G


MOSFET Single N-Channel Power MOSFET 90V, 50A, 17mO Power MOSFET
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USD 0.7725

Multiples of: 1

50 A90 V16.7 mOhmsn - channel     smd/smtTO - 252 - 3Reelsi    aec - q101 
NDB6020P


MOSFET P-Ch LL FET Enhancement Mode
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USD 0.7747

Multiples of: 1

24 A20 V41 mOhmsp - channel  - 65 C+ 175 C60 Wsmd/smtTO - 263Reelsi1 channel8 V enhancement  
FDS4675_F085


MOSFET P-CHANNEL MOSFET
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USD 0.7759

Multiples of: 1

11 A40 V21 mOhmsp - channel 1.4 V + 175 C2.4 Wsmd/smtSO - 8Reelsi1 channel20 V56 nC  powertrench
FDD20AN06A0


MOSFET N-Ch PowerTrench
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USD 0.7788

Multiples of: 501

           -       
FDMS3620S


MOSFET 25V Asymtrc Dual NCh MOSFET PowerTrench
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USD 0.7793

Multiples of: 1

38 A25 V5.5 mOhmsn - channel  - 55 C+ 150 C2.5 Wsmd/smtPOWER - 56Reelsi2 channel  enhancement powertrench
FDP55N06


MOSFET SINGLE N-CH 150V ULTRAFET TRENCH
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USD 0.782

Multiples of: 1

55 A60 V22 mOhmsn - channel  - 55 C+ 150 C114 Wthrough holeTO - 220 - 3Tubesi1 channel25 V enhancement  
FDB8880


MOSFET NCH PWR TRNCH MOSFET 30V 54A 11.6 OHMS
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USD 0.7821

Multiples of: 573

54 A30 V11.6 mOhmsn - channel  - 55 C+ 175 C55 Wsmd/smtTO - 263Reelsi1 channel20 V enhancement powertrench
NTMFS034N15MC


N-Channel 150V 6.1A (Ta), 31A (Tc) 2.5W (Ta), 62.5W (Tc) Surface Mount 8-PQFN (5x6)
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USD 0.7821

Multiples of: 1

          8 - PowertdfnDigi - Reel®Mosfet (Metal Oxide)      
FCD260N65S3


MOSFET SUPERFET3 260MOHM TO252
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USD 0.7829

Multiples of: 2500

12 A650 V260 mOhmsN - Channel 2.5 V- 55 C+ 150 C90 WSmd/SmtDPAK - 3Cut TapeSi1 Channel30 V24 nCEnhancement  
FDB14N30TM


Transistor: N-MOSFET; unipolar; 300V; 14A; 140W; D2PAK
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USD 0.783

Multiples of: 1600

            unifet      
FQB9P25TM


Fairchild Semiconductor MOSFET 250V P-Channel QFET
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USD 0.7831

Multiples of: 800

- 9.4 A- 250 V620 mOhmsp - channel30 V - 55 C+ 150 C3.13 Wsmd/smtD2PAK - 3Reelsi1 channel30 V enhancement  
NVD5C486NLT4G


MOSFET T6 40V DPAK EXP
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USD 0.7843

Multiples of: 1

24 A40 V16 mOhmsN - Channel 1.2 V- 55 C+ 175 C18 WSmd/SmtDPAK - 3Cut TapeSi1 Channel20 V9.8 nCEnhancementAec - Q101 
FDS3912


MOSFET SO-8
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USD 0.7846

Multiples of: 1

3 A100 V125 mOhmsn - channel20 V - 55 C+ 175 C2 Wsmd/smtSOIC - 8 NarrowReel    enhancement  
NVB6412ANT4G


MOSFET Power MOSFET 100V, 58A, 18.2 mohm, Single N-Channel, D2PAK. Power MOSFET 100V, 58A, 18.2 mohm, Single N-Channel, D2PAK.
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USD 0.7846

Multiples of: 1

58 A100 V18.2 mOhmsn - channel     smd/smtTO - 252 - 3Reelsi    aec - q101 
NTMFS4898NFT3G


Trans MOSFET N-CH 30V 36.7A 8-Pin SO-FL T/R
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USD 0.7851

Multiples of: 553

           Tape And Reel    enhancement  
NTMFS4898NFT1G


MOSFET NFET SO8FL 30V 120A 3MOHM
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USD 0.7851

Multiples of: 553

117 A30 V3.4 mOhmsn - channel 1.5 v to 2.5 V- 55 C+ 150 C73.5 Wsmd/smtSO - 8FLReel   24.5 nC   
HUFA76429D3


Fairchild Semiconductor MOSFET 20a 60V 0.027 Ohm Logic Level N-Ch
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USD 0.7858

Multiples of: 1800

20 A60 V20.5 mOhmsn - channel  - 55 C+ 175 C110 Wthrough holeTO - 251 - 3Tubesi1 channel16 V enhancement ultrafet
FDS8949"F085


MOSFET, DUAL N CHANNEL, 40V, 0.021OHM, 6A, SOIC-8
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USD 0.7865

Multiples of: 1

   Dual N Channel               
NVMFS6H864NLWFT1G


MOSFET T8 80V LL SO8FL
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ON Semiconductor Availability : 0
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USD 0.7875

Multiples of: 1

                   
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