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On Semiconductor MOSFETs

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDB86360_F085


MOSFET N-Channel Power Trench MOSFET
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USD 2.6606

Multiples of: 1

110 A80 V1.5 mOhmsn - channel20 V3 V- 55 C+ 175 C333 Wsmd/smtTO - 263 - 3Reelsi1 channel20 V207 nC  powertrench
FCP099N65S3


MOSFET SuperFET3 650V 99 mOhm,TO220 PKG
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USD 2.6625

Multiples of: 1

30 A650 V79 mOhmsN - Channel 2.5 V- 55 C+ 150 C227 WThrough HoleTO - 220 - 3 Si1 Channel30 V61 nCEnhancement  
2SK3746-1E


MOSFET NCH 10V DRIVE SERIES
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USD 2.6712

Multiples of: 1

2 A1.5 kV13 Ohmsn - channel    2.5 Wthrough holeTO - 247Tubesi1 channel     
FCP125N65S3R0


MOSFET SUPERFET3 650V 24A 125 mOhm
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USD 2.677

Multiples of: 1

24 A650 V125 mOhmsN - Channel 2.5 V- 55 C+ 150 C181 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V46 nCEnhancement  
FDA24N50


N-Channel 500 V 24A (Tc) 270W (Tc) Through Hole TO-3PN
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USD 2.6825

Multiples of: 1

   n - channel  - 55 C+ 150 C through holeTO - 3PNTube       
FCPF190N60E-F152


Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220F Tube
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USD 2.6833

Multiples of: 1

20.6 A650 V190 mOhmsN - Channel 3.5 V- 55 C+ 150 C39 WThrough HoleTO - 220 - 3 Si1 Channel20 V , 30 V63 nCEnhancement  
NVMFS5113PLT1G


MOSFET SINGLE P-CHANNEL S08FL 60V 69A 1
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USD 2.6872

Multiples of: 1500

64 A60 V14 mOhmsP - Channel 1.5 V- 55 C+ 150 C150 WSmd/SmtSO - FL - 8Cut TapeSi1 Channel- 10 V83 nCEnhancementAec - Q101 
NTP7D3N15MC


N-Channel 150V 12.1A (Ta), 101A (Tc) 2.4W (Ta), 166W (Tc) Through Hole TO-220-3
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USD 2.7108

Multiples of: 1

          TO - 220 - 3TubeMosfet (Metal Oxide)      
NVATS5A304PLZT4G


MOSFET PCH4.5V DRIVE SERIES
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USD 2.7247

Multiples of: 1

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FDB0170N607L


MOSFET 60V TO263 7L JEDEC GREEN EMC
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USD 2.7456

Multiples of: 800

300 A60 V3.5 mOhmsN - Channel 2 V- 55 C+ 175 C3.8 WSmd/SmtTO - 263 - 7ReelSi1 Channel+/- 20 V173 nCEnhancement  
IRFS450B


Transistor: N-MOSFET; unipolar; 500V; 6.1A; 96W; TO3PF
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USD 2.7553

Multiples of: 360

                   
FDMS8350L


MOSFET PT8 40V/20V Nch PowerTrench MOSFET
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USD 2.7567

Multiples of: 1

200 A40 V1.2 mOhmsn - channel20 V1.5 V- 55 C+ 150 C113 Wsmd/smtPOWER - 56 - 8Reelsi1 channel20 V173 nCenhancement powertrench power clip
NVMTS0D6N04CLTXG


MOSFET T6 40V LL PQFN8*8 EXPANSI
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USD 2.7567

Multiples of: 1

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FDI030N06


Fairchild Semiconductor MOSFET NCH 60V 3.0Mohm
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USD 2.7609

Multiples of: 1

193 A60 V3.2 mOhmsn - channel  - 55 C+ 175 C231 Wthrough holeI2PAK - 3Tubesi1 channel    powertrench
FCH067N65S3-F155


MOSFET SuperFET3 650V 67 mOhm
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USD 2.7708

Multiples of: 30

         Through HoleTO - 247 - 3 Si     Superfet Iii
FDB045AN08A0_F085


Fairchild Semiconductor MOSFET 75V N-CHAN PwrTrench
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USD 2.7734

Multiples of: 800

90 A75 V3.9 mOhmsn - channel  - 55 C+ 175 C310 Wsmd/smtD2PAK - 3Reelsi1 channel     
FQPF8N90C


Fairchild Semiconductor MOSFET 900V N-Ch Q-FET advance C-Series
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USD 2.7836

Multiples of: 1

6 A900 V1.9 Ohmsn - channel  - 55 C+ 150 C60 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement qfet
FCA16N60N


MOSFET SupreMOS 16A
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USD 2.794

Multiples of: 450

16 A600 V170 mOhmsn - channel  - 55 C+ 150 C134.4 Wthrough holeTO - 3PNTubesi1 channel30 V enhancement supremos
FCPF099N65S3


MOSFET SuperFET3 650V 99 mOhm
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USD 2.7994

Multiples of: 1

30 A650 V85 mOhmsN - Channel 2.5 V- 55 C+ 150 C43 WThrough HoleTO - 220F - 3 Si1 Channel30 V57 nCEnhancement  
NTMTS0D7N04CTXG


MOSFET AFSM T6 40V SG NCH
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USD 2.8083

Multiples of: 3000

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