About RF Bipolar Transistors

RF Bipolar Transistors

RF bipolar transistors are electronic components used in high frequency applications, typically ranging from hundreds of megahertz up to several gigahertz. They are a type of bipolar junction transistor (BJT) that are specifically designed for use in radio frequency (RF) circuits. Unlike traditional BJTs, RF bipolar transistors are optimized to provide a low noise, high gain, and high frequency response. They are also able to handle greater power levels, making them suitable for use in RF power amplifiers.The construction of an RF bipolar transistor involves a heavily doped N-type or P-type semiconductor material sandwiched between two lightly doped layers. This creates two P-N junctions, allowing for the control of current flow through the transistor by varying the voltage applied to the base terminal. RF bipolar transistors are commonly used in various wireless communication systems, such as mobile phones, satellite communication, and radar systems. They are also utilized in RF switches, oscillators, and mixers.Overall, RF bipolar transistors are essential components in the world of electronics, enabling the transmission and reception of high frequency signals for various applications.
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Enter Qty SeriesTransistor TypeTechnologyTransistor PolarityOperating FrequencyDC Collector/Base Gain hFE MinCollector- Emitter Voltage VCEO MaxEmitter- Base Voltage VEBOContinuous Collector CurrentPd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureMounting StylePackage / CasePackagingConfigurationQualification
  
                     
Hot BFP 420 H6740


RF Bipolar Transistors RF BIP TRANSISTOR
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Infineon Availability : 2880
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BFP 405 H6740


Transistors RF Bipolar RF BIP TRANSISTOR
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Infineon Availability : 2880
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Bfp405BipolarSiNpn25 GHz604.5 V1.5 V25 mA75 mW- 65 C+ 150 CSmd/SmtSOT343 - 4ReelSingle 
2SC4774T106R


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Bfp640BipolarSigeNpn40 GHz1104 V1.2 V50 mA200 mW- 65 C+ 150 CSmd/SmtSOT - 343ReelSingle Dual Emitter 
MCH4009-TL-H


Transistors RF Bipolar HIGH FREQUENCY AMPLIFIER
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Mch4009BipolarSiliconNpn25 GHz503.5 V2.5 V40 mA120 mW- 55 C+ 150 CSmd/SmtSOT - 343 - 4ReelSingle 
BFU630F.115


RF Bipolar Transistors Single NPN 21GHz
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RF Bipolar Transistors RF Bipolar Transistor .1A 900mW
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              Cut Tape  
BFP 520F H6327


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Infineon Availability : 2774
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Bfp520BipolarSiNpn45 GHz702.5 V1 V40 mA100 mW- 65 C+ 150 CSmd/SmtTSFP - 4ReelSingle Dual Emitter 
NSVF4009SG4T1G


RF Bipolar Transistors BIP NPN 40MA 3.5V FT=25G
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ON Semiconductor Availability : 2745
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USD 0.1817

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  Si           Cut Tape Aec - Q100
BFR 193W H6327


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Infineon Availability : 2722
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USD 0.0885

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Bfr193BipolarSiNpn900 MHz7012 V2 V80 mA580 mW  Smd/SmtSOT - 323Reel  
BFP 540FESD H6327


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Infineon Availability : 2692
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Bfp540BipolarSiNpn30 GHz504.5 V1 V80 mA250 mW- 65 C+ 150 CSmd/SmtTSFP - 4ReelSingle Dual Emitter 
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RF Bipolar Transistors RF BIP TRANSISTOR
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Bfp650 Si          TSFP - 4Cut Tape Aec - Q100
NSVF6003SB6T1G


RF Bipolar Transistors BIP NPN 0.15A 12V FT=7G
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ON Semiconductor Availability : 2675
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 BipolarSiNpn7 GHz10012 V2 V150 mA800 mW- 55 C+ 150 CSmd/SmtCPH - 6Cut TapeSingleAec - Q100
BF888H6327XTSA1


RF Bipolar Transistors RF BIP TRANSISTOR
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Infineon Availability : 2627
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Bf888 Si          SOT - 343 - 4Cut Tape  
BFR505/T1


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 BipolarSiNpn9000 MHz 15 V2.5 V0.018 A150 mW- 65 C+ 150 CSmd/SmtSOT - 23ReelSingle 
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Bfp410BipolarSiNpn25 GHz604.5 V1.5 V40 mA150 mW- 55 C+ 150 CSmd/SmtSOT - 343Reel  
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Bfp460BipolarSiNpn  4.5 V1.5 V70 mA230 mW- 65 C+ 150 CSmd/SmtSOT - 343ReelSingle Dual Emitter 
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ON Semiconductor Availability : 2500
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 BipolarSiNpn10 GHz6012 V2 V100 mA450 mW- 55 C+ 150 CSmd/SmtSC - 82FL - 4Cut TapeSingleAec - Q101
BFP196WH6327XTSA1


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Infineon Availability : 2418
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USD 0.069

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Bfp196 Si          SOT - 343 - 4Reel  
BFP 650F H6327


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Infineon Availability : 2355
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USD 0.2277

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Bfp650BipolarSige           Reel  
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