2SC4774T106R ROHM

High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features Dimensions (Unit : mm) 1) Very low output-on resistance (Ron). 2SC4774 2) Low capacitance. 2.0 0.9 0.7 0.3 0.2 ( ) 3 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit (2) (1) Collector-base voltage VCBO 12 V 0.65 0.65 0.15 Collector-emitter voltage VCEO 6 V 1.3 Emitter-base voltage VEBO 3 V Each lead has same dimensions Collector current IC 50 mA Collector power dissipation PC 0.2 W ROHM : UMT3 (1) Emitter (2) Base EIAJ : SC-70 Junction temperature Tj 150 C (3) Collector Storage temperature Tstg 55 to +150 C 2SC4713K Packaging specifications and hFE 2.9 1.1 0.4 0.8 Type 2SC4774 2SC4713K Package UMT3 SMT3 (3) hFE S S Marking BM BM Code T106 T146 (2) (1) 3000 3000 Basic ordering unit (pieces) 0.95 0.95 0.15 Denotes hFE 1.9 Each lead has same dimensions ROHM : SMT3 (1) Emitter (2) Base EIAJ : SC-59 (3) Collector Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 12 V IC=10A Collector-emitter breakdown voltage BVCEO 6 V IC=1mA Emitter-base breakdown voltage BVEBO 3 V IE=10A Collector cutoff current ICBO 0.5 A VCB=10V Emitter cutoff current IEBO 0.5 A VEB=2V Collector-emitter saturation voltage VCE(sat) 0.3 V IC/IB=10mA/1mA DC current transfer ratio hFE 180 560 VCE/IC=5V/5mA Transition frequency fT 300 800 MHz VCE=5V, IE= 10mA, f=200MHz Output capacitance Cob 1 1.7 pF VCB=10V, IE=0A, f=1MHz Output-on resistance Ron 2 IB=3mA, VI=100mVrms, f=500kHz This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com 2009.12 - Rev.C 1/2 c 2009 ROHM Co., Ltd. All rights reserved. 1.25 1.6 2.1 2.8 0.1Min. 0.3Min. 2SC4774 / 2SC4713K Data Sheet Electrical characteristic curves 10 50 50 Ta=25C Ta=25C VCE=5V 8 40 40 6 30 30 4 20 20 2 10 10 IB=0A IB=0mA 0 0 0 0 1 234 5 0 0.1 0.2 0.3 0.4 0.5 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter output Fig.2 Grounded emitter output Fig.3 Grounded emitter propagation characteristics ( ) characteristics ( ) characteristics 2000 1000 1000 Ta=25C Ta=25C Ta=25C VCE=5V IC/IB=10 1000 VCE=5V 500 500 500 200 200 200 100 100 100 50 50 20 50 10 20 5 20 10 0.1 0.2 0.5 12 5 10 20 50 0.1 0.2 0.5 12 5 10 20 50 0.1 0.2 0.5 12 5 10 20 50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.6 Gain bandwidth product vs. Fig.5 Collector-emitter saturation Fig.4 DC current gain vs. collector current collector current voltage vs. collector current 20 50 Ta=25C Ta=25C 20 Ta=25C f=1MHz f=500kHz 10 f=1MHz i=100mVrms 10 5 RL=1k 20 5 2 10 2 5 1 1 0.5 0.5 2 0.2 1 0.1 0.2 0.5 12 5 10 20 50 0.2 0.1 0.2 0.5 12 5 10 20 50 0.1 0.2 0.5 12 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) BASS CURRENT : IB (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance Fig.9 Output-on resistance vs. Fig.8 Back capacitance voltage vs. voltage base current www.rohm.com 2009.12 - Rev.C 2/2 c 2009 ROHM Co., Ltd. All rights reserved. 35mA 0.3mA 30mA 25mA 0.2mA 20mA 15mA 0.1mA 10mA 5mA 0.5mA 0.4mA 1.0mA 125C 25C 25C COLLECTOR CURRENT : IC (mA) FEEDBACK CAPACITIANCE : Cre (pF) DC CURRENT TRANSFER RATIO : hFE OUTPUT CAPACITANCE : Cob (pF) COLLECTOR CURRENT : IC (mA) COLLECTER SATURATION VOLTAGE : VCE(sat) (mA) COLLECTOR CURRENT : IC (mA) ON RESISTANE : Ron () GAIN BANDWIDTH PRODUCT : fT (MHz)