X-On Electronics has gained recognition as a prominent supplier of 2SC4774T106R RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. 2SC4774T106R RF Bipolar Transistors are a product manufactured by ROHM. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

2SC4774T106R ROHM

2SC4774T106R electronic component of ROHM
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Part No.2SC4774T106R
Manufacturer: ROHM
Category: RF Bipolar Transistors
Description: Trans RF BJT NPN 6V 0.05A 3-Pin UMT T/R
Datasheet: 2SC4774T106R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
551: USD 0.0738 ea
Line Total: USD 40.66 
Availability - 2861
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ: 551  Multiples: 1
Pack Size: 1
Availability Price Quantity
2749
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 1316
Multiples : 1
1316 : USD 0.0721
2500 : USD 0.0701

2861
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 551
Multiples : 1
551 : USD 0.0738
1000 : USD 0.063
2000 : USD 0.0598

   
Manufacturer
Product Category
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We are delighted to provide the 2SC4774T106R from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC4774T106R and other electronic components in the RF Bipolar Transistors category and beyond.

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High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features Dimensions (Unit : mm) 1) Very low output-on resistance (Ron). 2SC4774 2) Low capacitance. 2.0 0.9 0.7 0.3 0.2 ( ) 3 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit (2) (1) Collector-base voltage VCBO 12 V 0.65 0.65 0.15 Collector-emitter voltage VCEO 6 V 1.3 Emitter-base voltage VEBO 3 V Each lead has same dimensions Collector current IC 50 mA Collector power dissipation PC 0.2 W ROHM : UMT3 (1) Emitter (2) Base EIAJ : SC-70 Junction temperature Tj 150 C (3) Collector Storage temperature Tstg 55 to +150 C 2SC4713K Packaging specifications and hFE 2.9 1.1 0.4 0.8 Type 2SC4774 2SC4713K Package UMT3 SMT3 (3) hFE S S Marking BM BM Code T106 T146 (2) (1) 3000 3000 Basic ordering unit (pieces) 0.95 0.95 0.15 Denotes hFE 1.9 Each lead has same dimensions ROHM : SMT3 (1) Emitter (2) Base EIAJ : SC-59 (3) Collector Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 12 V IC=10A Collector-emitter breakdown voltage BVCEO 6 V IC=1mA Emitter-base breakdown voltage BVEBO 3 V IE=10A Collector cutoff current ICBO 0.5 A VCB=10V Emitter cutoff current IEBO 0.5 A VEB=2V Collector-emitter saturation voltage VCE(sat) 0.3 V IC/IB=10mA/1mA DC current transfer ratio hFE 180 560 VCE/IC=5V/5mA Transition frequency fT 300 800 MHz VCE=5V, IE= 10mA, f=200MHz Output capacitance Cob 1 1.7 pF VCB=10V, IE=0A, f=1MHz Output-on resistance Ron 2 IB=3mA, VI=100mVrms, f=500kHz This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com 2009.12 - Rev.C 1/2 c 2009 ROHM Co., Ltd. All rights reserved. 1.25 1.6 2.1 2.8 0.1Min. 0.3Min. 2SC4774 / 2SC4713K Data Sheet Electrical characteristic curves 10 50 50 Ta=25C Ta=25C VCE=5V 8 40 40 6 30 30 4 20 20 2 10 10 IB=0A IB=0mA 0 0 0 0 1 234 5 0 0.1 0.2 0.3 0.4 0.5 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter output Fig.2 Grounded emitter output Fig.3 Grounded emitter propagation characteristics ( ) characteristics ( ) characteristics 2000 1000 1000 Ta=25C Ta=25C Ta=25C VCE=5V IC/IB=10 1000 VCE=5V 500 500 500 200 200 200 100 100 100 50 50 20 50 10 20 5 20 10 0.1 0.2 0.5 12 5 10 20 50 0.1 0.2 0.5 12 5 10 20 50 0.1 0.2 0.5 12 5 10 20 50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.6 Gain bandwidth product vs. Fig.5 Collector-emitter saturation Fig.4 DC current gain vs. collector current collector current voltage vs. collector current 20 50 Ta=25C Ta=25C 20 Ta=25C f=1MHz f=500kHz 10 f=1MHz i=100mVrms 10 5 RL=1k 20 5 2 10 2 5 1 1 0.5 0.5 2 0.2 1 0.1 0.2 0.5 12 5 10 20 50 0.2 0.1 0.2 0.5 12 5 10 20 50 0.1 0.2 0.5 12 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) BASS CURRENT : IB (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance Fig.9 Output-on resistance vs. Fig.8 Back capacitance voltage vs. voltage base current www.rohm.com 2009.12 - Rev.C 2/2 c 2009 ROHM Co., Ltd. All rights reserved. 35mA 0.3mA 30mA 25mA 0.2mA 20mA 15mA 0.1mA 10mA 5mA 0.5mA 0.4mA 1.0mA 125C 25C 25C COLLECTOR CURRENT : IC (mA) FEEDBACK CAPACITIANCE : Cre (pF) DC CURRENT TRANSFER RATIO : hFE OUTPUT CAPACITANCE : Cob (pF) COLLECTOR CURRENT : IC (mA) COLLECTER SATURATION VOLTAGE : VCE(sat) (mA) COLLECTOR CURRENT : IC (mA) ON RESISTANE : Ron () GAIN BANDWIDTH PRODUCT : fT (MHz)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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