About SiC MOSFETs

SiC MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
SCT50N120


SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C)
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STMicroelectronics Availability : 9
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USD 36.1133

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV65 A52 mOhms- 10 V , + 25 V1.8 V122 nC- 55 C+ 200 C318 WEnhancement HiP247
C3M0015065D


SiC MOSFETs SiC, MOSFET, 15mohm, 650V, TO-247-3, Industrial
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Wolfspeed Availability : 9
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USD 40.7864

Multiples of: 1

Through Hole N - Channel1 Channel650 V81 A15 mOhms- 4 V , + 15 V3.6 V188 nC- 40 C+ 175 C416 WEnhancement  
AIMZH120R040M1TXKSA1


SiC MOSFETs Y
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Infineon Availability : 6
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USD 14.6204

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV55 A40 mOhms- 5 V , + 23 V5.1 V43 nC- 55 C+ 175 C268 WEnhancement CoolSiC
Hot C3M0032120K


SiC MOSFETs 1.2kV 32mOHMS G3 SiC MOSFET
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Wolfspeed Availability : 5
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USD 19.02

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV63 A32 mOhms- 4 V , + 15 V3.6 V118 nC- 40 C+ 175 C283 WEnhancement  
SCT3030ALHRC11


SiC MOSFETs 650V 70A 262W SIC 30mOhm TO-247N
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ROHM Availability : 5
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USD 48.204

Multiples of: 1

Through Hole N - Channel1 Channel650 V70 A30 mOhms- 4 V , + 22 V2.7 V104 nC- 55 C+ 175 C262 WEnhancementAEC - Q101 
MSC090SMA070S


SiC MOSFETs MOSFET SIC 700 V 90 mOhm TO-268
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Microchip Availability : 4
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USD 7.8828

Multiples of: 1

SMD/SMT N - Channel1 Channel700 V25 A111 mOhms- 10 V , + 23 V1.9 V38 nC- 55 C+ 175 C91 WEnhancement  
C3M0075120J


SiC MOSFETs SIC MOSFET 1200V 75 mOhm TO-263-7
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Wolfspeed Availability : 4
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USD 10.8326

Multiples of: 1

Smd/Smt N - Channel1 Channel1.2 kV30 A75 mOhms15 v , - 4 V1.7 V51 nC- 55 C+ 150 C113.6 WEnhancement  
IV1Q12160D7Z


TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip Availability : 4
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USD 11.0313

Multiples of: 1

                
NVH4L080N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247-4L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?4L
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ON Semiconductor Availability : 4
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USD 15.3867

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV29 A80 mOhms- 15 V , + 25 V4.3 V56 nC- 55 C+ 175 C170 WEnhancement EliteSiC
SCTW35N65G2VAG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm
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STMicroelectronics Availability : 4
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USD 19.2954

Multiples of: 1

Through Hole N - Channel1 Channel650 V45 A67 mOhms- 10 V , + 22 V5 V73 nC- 55 C+ 200 C240 WEnhancementAEC - Q101 
SCT20N120AG


SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm typ Tj = 15
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STMicroelectronics Availability : 4
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USD 19.8767

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV20 A239 mOhms- 20 V , + 20 V3.5 V45 nC- 55 C+ 200 C175 WEnhancementAEC - Q101 
SCTW100N65G2AG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm
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STMicroelectronics Availability : 4
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USD 31.1271

Multiples of: 1

Through Hole N - Channel1 Channel650 V100 A69 mOhms- 10 V , + 22 V5 V162 nC- 55 C+ 200 C420 WEnhancementAEC - Q101 
NVBG020N090SC1


SiC MOSFETs 20MOHM 900V
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ON Semiconductor Availability : 4
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USD 37.2292

Multiples of: 1

SMD/SMT N - Channel1 Channel900 V112 A28 mOhms- 8 V , + 22 V4.3 V200 nC- 55 C+ 175 C477 WEnhancementAEC - Q101EliteSiC
AIMW120R035M1HXKSA1


SiC MOSFETs Y
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Infineon Availability : 4
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USD 47.9406

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV52 A35 mOhms- 7 V , + 23 V4.5 V59 nC- 55 C+ 175 C228 WEnhancement CoolSiC
NVBG015N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 12mohm, 650V, M2, D2PAK-7L Silicon Carbide MOSFET, N-Channel, 650V, 12 mohm, D2PAK-7L
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ON Semiconductor Availability : 4
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USD 48.8622

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V145 A18 mOhms- 8 V , + 22 V4.3 V283 nC- 55 C+ 175 C500 WEnhancement EliteSiC
NVBG020N120SC1


SiC MOSFETs SIC MOS D2PAK-7L 20MOHM 1
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ON Semiconductor Availability : 4
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USD 57.4092

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV98 A28 mOhms- 15 V , + 25 V4.3 V220 nC- 55 C+ 175 C468 WEnhancementAEC - Q101EliteSiC
IV1B12013HA1L


Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip Availability : 4
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USD 239.2168

Multiples of: 1

                
AIMZH120R030M1TXKSA1


SiC MOSFETs Y
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Infineon Availability : 3
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USD 19.3826

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV69 A30 mOhms- 5 V , + 23 V5.1 V57 nC- 55 C+ 175 C326 WEnhancement CoolSiC
NVHL080N120SC1


SiC MOSFETs SIC MOS 80MW 1200 V 80 mOhms 44A
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ON Semiconductor Availability : 3
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USD 20.5592

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV31 A110 mOhms- 15 V , + 25 V4.3 V56 nC- 55 C+ 175 C178 WEnhancementAEC - Q101EliteSiC
IMZ120R030M1HXKSA1


SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 3
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USD 21.3796

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV56 A40 mOhms- 7 V , + 23 V5.7 V63 nC- 55 C+ 150 C227 WEnhancement CoolSiC
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