e TM ADVANCED EPAD LINEAR DEVICES, INC. ALD110804/ALD110904 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD V = +0.40V GS(th) PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110804/ALD110904 are high precision monolithic quad/dual enhance- Ultra low power (nanowatt) analog and digital ment mode N-Channel MOSFETS matched at the factory using ALDs circuits proven EPAD CMOS technology. These devices are intended for low Ultra low operating voltage(<0.40V) circuits voltage, small signal applications. The ALD110804/ALD110904 MOSFETS Sub-threshold biased and operated circuits are designed and built for exceptional device electrical characteristics Precision current mirrors and current sources matching. Since these devices are on the same monolithic chip, they also Nano-Amp current sources exhibit excellent tempco tracking characteristics. They are versatile circuit High impedance resistor simulators elements useful as design components for a broad range of analog appli- Capacitive probes and sensor interfaces cations, such as basic building blocks for current sources, differential am- Differential amplifier input stages plifier input stages, transmission gates, and multiplexer applications. For Discrete Voltage comparators and level shifters most applications, connect the V+ pin to the most positive voltage and the Voltage bias circuits V- and IC pins to the most negative voltage in the system. All other pins Sample and Hold circuits must have voltages within these voltage limits at all times. Analog and digital inverters Charge detectors and charge integrators The ALD110804/ALD110904 devices are built for minimum offset voltage Source followers and High Impedance buffers and differential thermal response, and they are suited for switching and Current multipliers amplifying applications in <+0.1V to +10V systems where low input bias Discrete Analog switches / multiplexers current, low input capacitance and fast switching speed are desired, as these devices exhibit well controlled turn-off and sub-threshold character- istics and can be biased and operated in the sub-threshold region. Since PIN CONFIGURATION these are MOSFET devices, they feature very large (almost infinite) cur- rent gain in a low frequency, or near DC, operating environment. ALD110804 The ALD110804/ALD110904 are suitable for use in very low operating - - V V voltage or very low power (nanowatt), precision applications which require IC* 1 16 IC* very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field Effect G 2 15 G N1 N2 Transistors result from extremely low current loss through the control gate. M 1 M 2 3 14 D D N2 The DC current gain is limited by the gate input leakage current, which is N1 specified at 30pA at room temperature. For example, DC beta of the de- + + S 13 4 V V 12 vice at a drain current of 3mA and input leakage current of 30pA at 25C - - is 3mA/30pA = 100,000,000. 5 V 12 S V 34 D 6 11 D N4 N3 FEATURES M 4 M 3 G 7 10 G N4 N3 Enhancement-mode (normally off) Precision Gate Threshold Voltage of +0.40V 8 9 IC* IC* - - V V Matched MOSFET-to-MOSFET characteristics Tight lot-to-lot parametric control SCL, PCL PACKAGES Low input capacitance V match (V ) to 10mV GS(th) OS 12 ALD110904 High input impedance 10 typical Positive, zero, and negative V temperature coefficient GS(th) 8 - - V DC current gain >10 V IC* 1 8 IC* Low input and output leakage currents G 2 7 G N1 N2 ORDERING INFORMATION (L suffix denotes lead-free (RoHS)) M 1 M 2 D 3 6 D N1 N2 Operating Temperature Range* 0C to +70C0C to +70C - - S V 12 4 V 5 16-Pin 16-Pin 8-Pin 8-Pin SOIC Plastic Dip SOIC Plastic Dip SAL, PAL PACKAGES Package Package Package Package *IC pins are internally connected. Connect to V- ALD110804SCL ALD110804PCL ALD110904SAL ALD110904PAL * Contact factory for industrial temp. range or user-specified threshold voltage values. 2016 Advanced Linear Devices, Inc., Vers. 2.3 www.aldinc.com 1 of 12 E N A D E L BABSOLUTE MAXIMUM RATINGS Drain-Source voltage, V 10.6V DS Gate-Source voltage, V 10.6V GS Power dissipation 500 mW Operating temperature range SCL, PCL, SAL, PAL 0C to +70C Storage temperature range -65C to +150C Lead temperature, 10 seconds +260C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS + - V = +5V V = GND T = 25C unless otherwise specified A ALD110804/ALD110904 Parameter Symbol Min Typ Max Unit Test Conditions Gate Threshold Voltage V 0.38 0.40 0.42 V I = 1A, V = 0.1V GS(th) DS DS Offset Voltage V 210 mV OS V -V GS(th)1 GS(th)2 Offset VoltageTempco TC 5 V/CV = V VOS DS1 DS2 Gate Threshold Voltage TC -1.7 mV/CI = 1A, V = 0.1V VGS(th) DS DS Tempco 0.0 I = 20A, V = 0.1V DS DS +1.6 I = 40A, V = 0.1V DS DS Drain Source On Current I 12.0 mA V = +9.9V, V = +5V DS(ON) GS DS 3.0 V = +4.4V, V = +5V GS DS Forward Transconductance G 1.4 mmho V = +4.4V FS GS V = +9.4V DS Transconductance Mismatch G 1.8 % FS Output Conductance G 68 mho V = +4.4V OS GS V = +9.4V DS Drain Source On Resistance R 500 V = +4.4V DS(ON) GS V = +0.1V DS Drain Source On Resistance R 0.5 % DS(ON) Mismatch - Drain Source Breakdown BV 10 V V = V = -0.6V DSX GS Voltage I = 1.0A DS 1 Drain Source Leakage Current I 10 400 pA V = -0.6V, V =+5V DS(OFF) GS DS - V = -5V 4nA T = 125C A 1 Gate Leakage Current I 3 200 pA V = +5V, V = 0V GSS GS DS 1nA T =125C A Input Capacitance C 2.5 pF ISS Transfer Reverse Capacitance C 0.1 pF RSS + Turn-on Delay Time t 10 ns V = 5V, R = 5K on L + Turn-off Delay Time t 10 ns V = 5V, R = 5K off L Crosstalk 60 dB f = 100KHz 1 Notes: Consists of junction leakage currents ALD110804/ALD110904, Vers. 2.3 Advanced Linear Devices 2 of 12