e TM ADVANCED EPAD LINEAR DEVICES, INC. ALD1108E/ALD1110E QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD) GENERAL DESCRIPTION BENEFITS ALD1108E/ALD1110E are monolithic quad/dual EPAD (Electrically Precision matched electrically after Programmable Analog Device) N-channel MOSFETs with electrically packaging adjustable threshold (turn-on) voltage. The ALD1108E/ALD1110E are Simple, elegant single-chip user option matched and adjusted (e-trimmed) at the factory resulting in quad/dual to trim voltage/current values MOSFETs that are highly matched in threshold voltages and other electrical Excellent device matching characteristics characteristics. For a given input voltage, the threshold voltage of a with or without additional electrical trim MOSFET device determines its drain on-current, resulting in an on- Remotely and electrically trim parameters resistance characteristic that can be precisely preset and then controlled by on circuits that are physically inaccessible the input voltage very accurately. PIN CONFIGURATION Using an ALD1108E/ALD1110E is simple and straight forward. The ALD1110E MOSFETs function as n-channel MOSFETs, except that all the devices have exceptional matching to each other in electrical characteristics. Since these devices are on the same monolithic chip, they also exhibit excellent EPAD 1 EPAD 2 P 1 8 P N1 N2 tempco matching characteristics. G 2 7 G N2 N1 These MOSFET devices have very low input currents, and as a result a very D 3 D N1 6 N2 12 high input impedance (>10 Ohm). The gate voltage from a control source + - + v S , V 4 5 V 12 can drive many MOSFET inputs with practically no loading effects. Used in precision current mirror or current multiplier applications, they can be used to provide a current source over a 100nA to 3mA range, and with either a TOP VIEW positive, negative or zero tempco. SAL, PAL, DA PACKAGES ALD1108E EPAD 1 EPAD 2 ORDERING INFORMATION (L suffix denotes lead-free (RoHS)) P 1 16 P N1 N2 Operating Temperature Range* G 2 15 G N1 N2 0C to +70C0C to +70C -55C to +125C D 3 14 D N1 N2 + + S 4 v 13 V 12 8-Pin SOIC 8-Pin Plastic Dip 8-Pin CERDIP - - Package Package Package v V 5 12 S 34 D 6 11 D N4 N3 ALD1110ESAL ALD1110EPAL ALD1110EDA G 7 10 G N4 N3 16-Pin SOIC 16-Pin Plastic Dip 16-Pin CERDIP P 8 9 P N4 N3 EPAD 4 EPAD 3 Package Package Package TOP VIEW ALD1108ESCL ALD1108EPCL ALD1108EDC SCL, PCL, DC PACKAGES * Contact factory for leaded (non-RoHS) or high temperature versions. BLOCK DIAGRAM BLOCK DIAGRAM ALD1110E ALD1108E V+(5) V+(13) P (1) D (3) P (16) P (9) D (11) D (6) P (8) N N1 DN2 (14) N2 N3 N3 N4 N4 P (1) D (3) D (6) P (8) N1 N1 N2 N2 ~ ~ G (2) G (15) G (10) G (7) N1 N2 N3 N4 G (7) G (2) N2 N1 EPAD 1 EPAD 2 EPAD 3 EPAD 4 ~ EPAD 1 EPAD 2 ~ S (4) V- (5) S (12) 12 34 S (4) 12 V- (4) Rev 2.0 2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com E N A D E L BOptional EPAD Threshold Voltage Trimming by User BENEFITS (cont.) The basic EPAD MOSFET device is a monotonically Usable in environmentally sealed circuits adjustable device, which means the device can normally No mechanical moving parts -- high G-shock be e-trimmed to increase in threshold voltage and to tolerance decrease in drain-on current as a function of a given input Improved reliability, dependability, dust and bias voltage. Used as an in-circuit element for trimming or moisture resistance setting a combination of voltage, current and/or on- Cost and labor savings resistance characteristics, it can be set up to be e-trimmed Small footprint for high board density remotely and automatically. Once e-trimmed, the set applications voltage and current levels are stored indefinitely inside the device as a nonvolatile stored charge, which is not affected during normal operation of the device, even when power is FEATURES turned off. A given EPAD device can be adjusted many times to continually increase its threshold voltage. A pair Electrically Programmable Analog Device of EPAD devices can also be connected differentially such Proven, non-volatile CMOS technology that one device is used to adjust a parameter in one Operates from 2V, 3V, 5V to 10V direction and the other device is used to adjust the same Flexible basic circuit building block and design parameter in the other direction. element Very high resolution -- average e-trim voltage The ALD1108E/ALD1110E can be e-trimmed with an ALD resolution of 0.1mV EPAD programmer to obtain the desired voltage and Wide dynamic range -- current levels from 0.1A current levels. They can also be e-trimmed as an active in- to 3000A system element in a user system, via user designed Voltage adjustment range from 1.000V to 3.000V interface circuitry. P , P , etc., are pins required for N1 N2 in 0.1mV steps optional e-trim of respective MOSFET devices. If unused, Typical 10-year drift of less than 2mV these pins are to be connected to V- or ground. For more Usable in voltage mode or current mode information, see Application Note AN1108. 12 High input impedance -- 10 9 Very high DC current gain -- greater than 10 Device operating current has positive temperature coefficient range and negative temperature APPLICATIONS coefficient range with cross-over zero temperature coefficient current level at 68A Precision PC-based electronic calibration Tight matching and tracking of on-resistance Automated voltage trimming or setting between different devices with e-trim Remote voltage or current adjustment of Very low input currents and leakage currents inaccessible nodes Low cost, monolithic technology PCMCIA based instrumentation trimming Application-specific or in-system programming modes Electrically adjusted resistive load Opptional user software-controlled automation Temperature compensated current sources and Opptional e-trim of any standard/custom configuration current mirrors Micropower operation Electrically trimmed/calibrated current sources Available in standard PDIP, SOIC and hermetic CDIP Permanent precision preset voltage level shifter packages Low temperature coefficient voltage and/or current Suitable for matched-pair balanced circuit configuration bias circuits Suitable for both coarse and fine trimming, as well as Multiple preset voltage bias circuits matched MOSFET array applications Multiple channel resistor pull-up or pull-down circuits RoHS compliant Microprocessor based process control systems Portable data acquisition systems Battery operated terminals and instruments Remote telemetry systems E-trimmable gain amplifiers Low level signal conditioning Sensor and transducer bias currents Neural networks ALD1108E/ALD1110E Advanced Linear Devices 2 of 14