e TM ADVANCED EPAD LINEAR DEVICES, INC. ALD212900A/ALD212900 PRECISION N-CHANNEL EPAD MOSFET ARRAY V = +0.00V DUAL HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GS(th) GENERAL DESCRIPTION FEATURES & BENEFITS + The ALD212900A/ALD212900 precision N-Channel EPAD MOSFET array is Zero Threshold V = 0.00V 0.01V GS(th) precision matched at the factory using ALDs proven EPAD CMOS technology. V (V match) to 2mV/10mV max. OS GS(th) These dual monolithic devices are enhanced additions to the ALD110900A/ Sub-threshold voltage ( nano-power) operation ALD110900 EPAD MOSFET Family, with increased forward transconductance < 100mV min. operating voltage and output conductance, particularly at very low supply voltages. < 1nA min. operating current < 1nW min. operating power Intended for low voltage, low power small signal applications, the ALD212900A/ > 100,000,000:1 operating current ranges ALD212900 features Zero-Threshold voltage, which enables circuit designs High transconductance and output conductance with input/output signals referenced to GND at enhanced operating voltage Low R of 14 DS(ON) ranges. With these devices, a circuit with multiple cascading stages can be Output current >50mA built to operate at extremely low supply/bias voltage levels. For example, a Matched and tracked tempco nanopower input amplifier stage operating at less than 0.2V supply voltage has Tight lot-to-lot parametric control been successfully built with these devices. Positive, zero, and negative V tempco GS(th) Low input capacitance and leakage currents ALD212900A EPAD MOSFETs feature exceptional matched pair device electri- cal characteristics of Gate Threshold Voltage V set precisely at 0.00V GS(th) + + 0.01V, I = +20A V = 0.1V, with a typical offset voltage of only 0.001V DS DS APPLICATIONS (1mV). Built on a single monolithic chip, they also exhibit excellent temperature tracking characteristics. These precision devices are versatile as design com- Low overhead current mirrors and current sources ponents for a broad range of analog small signal applications such as basic Zero Power Normally-On circuits building blocks for current mirrors, matching circuits, current sources, differen- Energy harvesting circuits tial amplifier input stages, transmission gates, and multiplexers. They also ex- Very low voltage analog and digital circuits cel in limited operating voltage applications, such as very low level voltage- Zero power fail-safe circuits clamps and nano-power normally-on circuits. Backup battery circuits & power failure detector Extremely low level voltage-clamps In addition to precision matched-pair electrical characteristics, each individual Extremely low level zero-crossing detector EPAD MOSFET also exhibits well controlled manufacturing characteristics, en- Matched source followers and buffers abling the user to depend on tight design limits from different production batches. Precision current mirrors and current sources These devices are built for minimum offset voltage and differential thermal re- Matched capacitive probes and sensor interfaces sponse, and they can be used for switching and amplifying applications in +0.1V Charge detectors and charge integrators + + to +10V ( 0.05V to 5V) powered systems where low input bias current, low High gain differential amplifier input stage input capacitance, and fast switching speed are desired. At V > 0.00V, the Matched peak-detectors and level-shifters GS device exhibits enhancement mode characteristics whereas at V < 0.00V the Multiple Channel Sample-and-Hold switches GS device operates in the subthreshold voltage region and exhibits conventional Precision Current multipliers depletion mode characteristics, with well controlled turn-off and sub-threshold Discrete matched analog switches/multiplexers levels that operate the same as standard enhancement mode MOSFETs. Nanopower discrete voltage comparators 10 The ALD212900A/ALD212900 features high input impedance (2.5 x 10 ) and 8 PIN CONFIGURATION high DC current gain (>10 ). A sample calculation of the DC current gain at a drain output current of 30mA and input current of 300pA at 25C is 30mA/300pA = 100,000,000, which translates into a dynamic operating current range of about eight orders of magnitude. A series of four graphs titled Forward Transfer Char- ALD212900 nd rd acteristics, with the 2 and 3 sub-titled expanded (subthreshold) and fur- th ther expanded (subthreshold), and the 4 sub-titled low voltage, illustrates the wide dynamic operating range of these devices. - - V V IC* 1 8 + V Generally it is recommended that the V+ pin be connected to the most positive voltage and the V- and IC (internally-connected) pins to the most negative volt- G 2 7 G N1 N2 age in the system. All other pins must have voltages within these voltage limits at all times. Standard ESD protection facilities and handling procedures for static M 1 M 2 D 3 6 D N1 N2 sensitive devices are highly recommended when using these devices. - - S V 4 V 5 12 ORDERING INFORMATION (L suffix denotes lead-free (RoHS)) Operating Temperature Range * 0C to +70C SAL, PAL PACKAGES 8-Pin SOIC Package 8-Pin Plastic Dip Package *IC pins are internally connected, connect to V- ALD212900ASAL ALD212900APAL ALD212900SAL ALD212900PAL *Contact factory for industrial temp. range or user-specified threshold voltage values. 2019 Advanced Linear Devices, Inc., Vers. 1.3 www.aldinc.com 1 of 12 E N A D E L BABSOLUTE MAXIMUM RATINGS Drain-Source voltage, V 10.0V DS Gate-Source voltage, V 10.0V GS Operating Current 80mA Power dissipation 500mW Operating temperature range SAL, PAL 0C to +70C Storage temperature range -65C to +150C Lead temperature, 10 seconds +260C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS + - V = +5V V = GND T = 25C unless otherwise specified A ALD212900A ALD212900 Parameter Symbol Min Typ Max Min Typ Max Unit Test Conditions Gate Threshold Voltage V -0.02 0.00 0.02 -0.02 0.00 0.02 V I = 20A, V = 0.1V GS(th) DS DS Offset Voltage V 1.8 3.8 2 10 mV V - V OS GS(th)M1 GS(th)M2 Offset Voltage Tempco TC 55 V/CV = V VOS DS1 DS2 GateThreshold Voltage Tempco TC -1.7 -1.7 mV/CI = 20A, V = 0.1V VGS(th) D DS 0.0 0.0 I = 760A, V = 0.1V D DS +0.6 +1.6 I = 1.5mA, V = 0.1V D DS 79 79 mA V = +3.0V, V = +3V On Drain Current I GS DS DS(ON) 85 85 AV = +0.1V, V = +0.1V GS DS Forward Transconductance G 38 38 mmho V = +3.0V FS GS V = +3.0V DS Transconductance Mismatch G 1.8 1.8 % FS Output Conductance G 2.3 2.3 mmho V = +3.0V OS GS V = +3.0V DS Drain Source On Resistance R 14 14 V = +5.0V DS(ON) GS V = +0.1V DS Drain Source On Resistance R 55 K V = +0.0V, V = +0.1V DS(ON) GS DS 1.18 1.18 V = +0.1V, V = +0.1V GS DS Drain Source On Resistance R 1.8 1.8 % V = +5.0V DS(ON) GS Tolerance V = +0.1V DS Drain Source On Resistance R 0.6 0.6 % DS(ON) Mismatch - Drain Source Breakdown BV 10 10 V V = V = -1.0V DSX GS Voltage I = 10A DS 1 Drain Source Leakage Current I 10 400 10 400 pA V = -1.0V, V = +5V DS(OFF) GS DS - V = -5V 44nAT = 125C A 1 Gate Leakage Current I 5 200 5 200 pA V = +5V, V = 0V GSS GS DS 11nAT = 125C A Input Capacitance C 30 30 pF ISS Transfer Reverse Capacitance C 22 pF RSS + Turn-on Delay Time t 10 10 ns V = 5V, R = 5K on L + Turn-off Delay Time t 10 10 ns V = 5V, R = 5K off L Crosstalk 60 60 dB f = 100KHz 1 Notes: Consists of junction leakage currents ALD212900A/ALD212900 Advanced Linear Devices 2 of 12