e TM ADVANCED EPAD LINEAR DEVICES, INC. ALD212902 PRECISION N-CHANNEL EPAD MOSFET ARRAY V = +0.20V DUAL HIGH DRIVE NANOPOWER MATCHED PAIR GS(th) GENERAL DESCRIPTION FEATURES & BENEFITS The ALD212902 precision enhancement mode N-Channel EPAD MOSFET Precision V = +0.20V 0.02V GS(th) array is precision matched at the factory using ALDs proven EPAD CMOS V (V match) 10mV max. OS GS(th) technology. These dual monolithic devices are enhanced additions to the Sub-threshold voltage (nano-power) operation ALD110902 EPAD MOSFET Family, with increased forward transconductance < 200mV min. operating voltage and output conductance, particularly at very low supply voltages. < 1nA min. operating current < 1nW min. operating power Intended for low voltage, low power small signal applications, the ALD212902 > 100,000,000:1 operating current ranges features precision +0.20V threshold voltage, which enables circuit designs with High transconductance and output conductance input/output signals referenced to very low operating voltage ranges. With these Low R of 14 DS(ON) devices, a circuit with multiple cascading stages can be built to operate at ex- Output current > 50mA tremely low supply/bias voltage levels. For example, a nanopower input ampli- Matched and tracked tempco fier stage operating at less than 0.2V supply voltage has been successfully built Tight lot-to-lot parametric control with these devices. Positive, zero, and negative V tempco GS(th) Low input capacitance and leakage currents ALD212902 EPAD MOSFETs feature exceptional matched pair electrical char- + acteristics of Gate Threshold Voltage V set precisely at +0.20V 0.010V, GS(th) + APPLICATIONS I = +20A V = 0.10V, with a typical offset voltage of only 0.002V (2mV). DS DS Built on a single monolithic chip, they also exhibit excellent temperature track- Low overhead current mirrors and current sources ing characteristics. These precision devices are versatile as design components Zero Power Normally-On circuits for a broad range of analog small signal applications such as basic building Energy harvesting circuits blocks for current mirrors, matching circuits, current sources, differential ampli- Very low voltage analog and digital circuits fier input stages, transmission gates, and multiplexers. They also excel in lim- Zero power fail-safe circuits ited operating voltage applications, such as very low level voltage-clamps and Backup battery circuits & power failure detector nano-power normally-on circuits. Extremely low level voltage-clamps Extremely low level zero-crossing detector In addition to precision matched-pair electrical characteristics, each individual Matched source followers and buffers EPAD MOSFET also exhibits well controlled manufacturing characteristics, en- Precision current mirrors and current sources abling the user to depend on tight design limits from different production batches. Matched capacitive probes and sensor interfaces These devices are built for minimum offset voltage and differential thermal re- Charge detectors and charge integrators sponse, and they can be used for switching and amplifying applications in +0.1V + + High gain differential amplifier input stage to +10V ( 0.05V to 5V) powered systems where low input bias current, low Matched peak-detectors and level-shifters input capacitance, and fast switching speed are desired. At V > +0.20V, the GS Multiple Channel Sample-and-Hold switches device exhibits enhancement mode characteristics whereas at V < +0.20V GS Precision Current multipliers the device operates in the subthreshold voltage region and exhibits conven- Discrete matched analog switches/multiplexers tional depletion mode characteristics, with well controlled turn-off and sub-thresh- Nanopower discrete voltage comparators old levels that operate the same as standard enhancement mode MOSFETs. 10 The ALD212902 features high input impedance (2.5 x 10 ) and high DC cur- 8 rent gain (>10 ). A sample calculation of the DC current gain at a drain output PIN CONFIGURATION current of 30mA and input current of 300pA at 25C is 30mA/300pA = 100,000,000, which translates into a dynamic operating current range of about eight orders of magnitude. A series of four graphs titled Forward Transfer Char- ALD212902 nd rd acteristics, with the 2 and 3 sub-titled expanded (subthreshold) and fur- th ther expanded (subthreshold), and the 4 sub-titled low voltage, illustrates the wide dynamic operating range of these devices. - - V V IC* 1 8 + Generally it is recommended that the V+ pin be connected to the most positive V voltage and the V- and IC (internally-connected) pins to the most negative volt- G 2 7 G age in the system. All other pins must have voltages within these voltage limits N1 N2 at all times. Standard ESD protection facilities and handling procedures for static M 1 M 2 D 3 6 D sensitive devices are highly recommended when using these devices. N1 N2 - - S V 4 V 5 12 ORDERING INFORMATION (L suffix denotes lead-free (RoHS)) Operating Temperature Range * 0C to +70C SAL, PAL PACKAGES 8-Pin SOIC Package 8-Pin Plastic Dip Package *IC pins are internally connected, connect to V- ALD212902SAL ALD212902PAL *Contact factory for industrial temp. range or user-specified threshold voltage values. 2019 Advanced Linear Devices, Inc., Vers. 1.2 www.aldinc.com 1 of 12 E N A D E L BABSOLUTE MAXIMUM RATINGS Drain-Source voltage, V 10.0V DS Gate-Source voltage, V 10.0V GS Operating Current 80mA Power dissipation 500mW Operating temperature range SAL, PAL 0C to +70C Storage temperature range -65C to +150C Lead temperature, 10 seconds +260C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS + - V = +5V V = GND T = 25C unless otherwise specified A ALD212902 Parameter Symbol Min Typ Max Unit Test Conditions Gate Threshold Voltage V 0.18 0.20 0.22 V I =20A, V = 0.1V GS(th) DS DS Offset Voltage V 210 mVV - V OS GS(th)M1 GS(th)M2 Offset Voltage Tempco TC 5 V/CV = V VOS DS1 DS GateThreshold Voltage Tempco TC -1.7 mV/CI = 20A, V = 0.1V VGS(th) D DS 0.0 I = 760A, V = 0.1V D DS +1.6 I = 1.5mA, V = 0.1V D DS 79 mA V = +3.2V, V = +3V On Drain Current I GS DS DS(ON) 85 AV = +0.3V, V = +0.1V GS DS Forward Transconductance G 38 mmho V = +3.2V FS GS V = +3.0V DS Transconductance Mismatch G 1.8 % FS Output Conductance G 2.3 mmho V = +3.2V OS GS V = +3.0V DS Drain Source On Resistance R 14 V = +5.2V DS(ON) GS V = +0.1V DS Drain Source On Resistance R 5K V = +0.2V, V = +0.1V DS(ON) GS DS 1.18 V = +0.3V, V = +0.1V GS DS Drain Source On Resistance R 1.8 % V = +5.2V DS(ON) GS Tolerance V = +0.1V DS Drain Source On Resistance R 0.6 % DS(ON) Mismatch - Drain Source Breakdown BV 10 V V = V = -0.8V DSX GS Voltage I = 10A DS 1 Drain Source Leakage Current I 10 400 pA V = -0.8V, V = +5V DS(OFF) GS DS - V = -5V 4nA T = 125C A 1 Gate Leakage Current I 5 200 pA V = +5V, V = 0V GSS GS DS 1nA T = 125C A Input Capacitance C 30 pF ISS Transfer Reverse Capacitance C 2pF RSS + Turn-on Delay Time t 10 ns V = 5V, R = 5K on L + Turn-off Delay Time t 10 V = 5V, R = 5K off L Crosstalk 60 dB f = 100KHz 1 Notes: Consists of junction leakage currents ALD212902 Advanced Linear Devices 2 of 12