2N3019 2N3020 www.centralsemi.com DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 140 V CBO Collector-Emitter Voltage V 80 V CEO Emitter-Base Voltage V 7.0 V EBO Continuous Collector Current I 1.0 A C Power Dissipation P 0.8 W D Power Dissipation (T=25C) P 5.0 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A 2N3019 2N3020 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=90V - 10 - 10 nA CBO CB I V =90V, T=150C - 10 - 10 A CBO CB A I V=5.0V - 10 - 10 nA EBO EB BV I=100A 140 - 140 - V CBO C BV I=30mA 80 - 80 - V CEO C BV I=100A 7.0 - 7.0 - V EBO E V I =150mA, I=15mA - 0.2 - 0.2 V CE(SAT) C B V I =500mA, I=50mA - 0.5 - 0.5 V CE(SAT) C B V I =150mA, I=15mA - 1.1 - 1.1 V BE(SAT) C B h V =10V, I=100A 50 - 30 100 FE CE C h V =10V, I=10mA 90 - 40 120 FE CE C h V =10V, I=150mA 100 300 40 120 FE CE C h V =10V, I =150mA, T=-55C 40 - - - FE CE C A h V =10V, I=500mA 50 - 30 100 FE CE C h V =10V, I=1.0A 15 - 15 - FE CE C f V =10V, I=50mA, f=20MHz 100 - 100 - MHz T CE C C V =10V, I=0, f=1.0MHz - 12 - 12 pF ob CB E C V =0.5V, I=0, f=1.0MHz - 60 - 60 pF ib EB C r C V =10V, I=10mA, f=4.0MHz - 400 - 400 ps b c CE C NF V =10V, I =100A, f=1.0kHz, CE C R=1.0k - 4.0 - - dB S R1 (11-June 2012)2N3019 2N3020 NPN SILICON TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (11-June 2012) www.centralsemi.com