2N6515 2N6516 2N6517 NPN
2N6518 2N6519 2N6520 PNP
www.centralsemi.com
COMPLEMENTARY SILICON
DESCRIPTION:
HIGH VOLTAGE TRANSISTORS
The CENTRAL SEMICONDUCTOR 2N6515, 2N6518
series devices are complementary silicon transistors
designed for high voltage driver and amplifier
applications.
MARKING: FULL PART NUMBER
TO-92 CASE
2N6515 2N6516 2N6517
MAXIMUM RATINGS: (T =25C) SYMBOL 2N6518 2N6519 2N6520 UNITS
A
Collector-Base Voltage V 250 300 350 V
CBO
Collector-Emitter Voltage V 250 300 350 V
CEO
Emitter-Base Voltage (NPN) V 6.0 V
EBO
Emitter-Base Voltage (PNP) V 5.0 V
EBO
Continuous Collector Current I 500 mA
C
Continuous Base Current I 250 mA
B
Power Dissipation P 625 mW
D
Operating and Storage Junction Temperature T , T -65 to +150 C
J stg
2N6515 2N6516 2N6517
ELECTRICAL CHARACTERISTICS: (T =25C) 2N6518 2N6519 2N6520
A
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
I V=150V - 50 - - - - nA
CBO CB
I V=200V - - - 50 - - nA
CBO CB
I V=250V - - - - - 50 nA
CBO CB
I V =5.0V (NPN) - 50 - 50 - 50 nA
EBO EB
I V =4.0V (PNP) - 50 - 50 - 50 nA
EBO EB
BV I=100A 250 - 300 - 350 - V
CBO C
BV I=1.0mA 250 - 300 - 350 - V
CEO C
BV I =10A (NPN) 6.0 - 6.0 - 6.0 - V
EBO E
BV I =10A (PNP) 5.0 - 5.0 - 5.0 - V
EBO E
V I =10mA, I=1.0mA - 0.30 - 0.30 - 0.30 V
CE(SAT) C B
V I =20mA, I=2.0mA - 0.35 - 0.35 - 0.35 V
CE(SAT) C B
V I =30mA, I=3.0mA - 0.50 - 0.50 - 0.50 V
CE(SAT) C B
V I =50mA, I=5.0mA - 1.0 - 1.0 - 1.0 V
CE(SAT) C B
V I =10mA, I=1.0mA - 0.75 - 0.75 - 0.75 V
BE(SAT) C B
V I =20mA, I=2.0mA - 0.85 - 0.85 - 0.85 V
BE(SAT) C B
V I =30mA, I=3.0mA - 0.90 - 0.90 - 0.90 V
BE(SAT) C B
V V =10V, I=100mA - 2.0 - 2.0 - 2.0 V
BE(ON) CE C
h V =10V, I=1.0mA 35 - 30 - 20 -
FE CE C
h V =10V, I=10mA 50 - 45 - 30 -
FE CE C
h V =10V, I=30mA 50 300 45 270 30 200
FE CE C
h V =10V, I=50mA 45 220 40 200 20 200
FE CE C
h V =10V, I=100mA 25 - 20 - 15 -
FE CE C
R2 (18-January 2016)2N6515 2N6516 2N6517 NPN
2N6518 2N6519 2N6520 PNP
COMPLEMENTARY SILICON
HIGH VOLTAGE TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (T =25C)
A
SYMBOL TEST CONDITIONS MIN MAX UNITS
f V =20V, I =10mA, f=20MHz 40 200 MHz
T CE C
C V =20V, I =0, f=1.0MHz 6.0 pF
cb CB E
C V =0.5V, I =0, f=1.0MHz (NPN) 80 pF
eb EB C
C V =0.5V, I =0, f=1.0MHz (PNP) 100 pF
eb EB C
t V =100V, V =2.0V, I =50mA, I =10mA 200 ns
on CC BE C B1
t V =100V, I =50mA, I =I=10mA 3.5 s
off CC C B1 B2
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
R2 (18-January 2016)
www.centralsemi.com